Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -35 V Collector-Base Voltage VCBO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector Cut-off Current ICBO VCB=-30V, IE=0 -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -0.1 μA DC Current Gain hFE Collector-Emitter Saturation Voltage VCE=-1V, IC=-100mA 100 VCE=-1V, IC=-800mA 40 320 VCE(sat) IC=-500mA, IB=-20mA Transition Frequency fT Collector Output Capacitance Cob -0.4 V VCE=-5V, IC=-10mA 120 MHz VCB=-10V, IE=0, f=1MHz 13 pF ■ hFE Classification Marking IO IY Rank O Y hFE 100～200 160～320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1