Diodes IC Transistors Transistor T SMD Type Product specification KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector Current IC 150 mA Collector Power Dissipation PC 100 mW Tj 150 ℃ Tstg -55 to 150 ℃ Junction Temperature Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 60 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 Emitter-base breakdown voltage 5 Typ Max Unit V(BR)EBO IE=100μA, IC=0 Collector Cut-off Current ICBO VCB=60V, IE=0 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 0.1 μA DC Current Gain hFE VCE=6V, IC=2mA 70 fT VCE=10V, IC=1mA 80 Transition Frequency 700 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA,f=1KHz,，RG=10KΩ 5.0 dB ■ hFE Classification Marking LO1 LYT LG1 LL1 Rank O Y G L hFE 70～140 120～240 200～400 350～700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1