MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS MARKING DIAGRAMS Features • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics • • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Device Meets MSL1 Requirements SMA CASE 403D A210 AYWWG SMB CASE 403A AYWW B210G G A210 B210 A Y WW G = MBRA2H100T3G NRVBA2H100T3G = MBRS2H100T3G NBRS2H100T3G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRA2H100T3G SMA (Pb−Free) 5,000 / Tape & Reel NRVBA2H100T3G SMA (Pb−Free) 5,000 / Tape & Reel MBRS2H100T3G SMB (Pb−Free) 2,500 / Tape & Reel NBRS2H100T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 8 1 Publication Order Number: MBRS2H100/D MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 150°C) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C 130 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (Note 2) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G YJCL Thermal Resistance, Junction−to−Ambient (Note 2) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G RqJA Thermal Resistance, Junction−to−Ambient (Note 3) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G RqJA Value 14 12 75 71 275 230 Unit °C/W °C/W °C/W 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Value Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 4) (iF = 2.0 A) vF Maximum Instantaneous Reverse Current (Note 4) (VR = 100 V) IR 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 125°C 0.79 0.65 0.008 1.5 Unit V mA MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, TYPICAL CHARACTERISTICS 100 150°C 25°C 125°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 1.1 150°C 0.3 0.5 0.9 1.1 1.3 1.5 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 150°C 125°C 0.1 0.01 0.001 25°C 0.0001 0 10 20 30 40 50 60 70 80 90 100 150°C 1 125°C 0.1 0.01 25°C 0.001 0 10 20 VR, REVERSE VOLTAGE (V) 30 40 50 60 80 70 90 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 4.0 400 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 80 90 IF(AV), AVERAGE FORWARD CURRENT (A) 450 C, CAPACITANCE (pF) 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 0 25°C 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 125°C 0.1 1.2 10 0.00001 10 3.0 Square Wave 2.0 1.0 0 100 RqJL = 14°C/W dc 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating − Lead http://onsemi.com 3 170 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, 4.0 RqJA = 71°C/W dc 3.0 RqJA = 100°C/W dc 2.0 Square Wave 1.0 0 0 20 40 60 80 100 120 160 175 140 PFO, AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 5 TJ = 175°C 4 Square Wave 3 dc 2 1 0 0 1 R(t) (C/W) 4 5 Figure 8. Maximum Forward Power Dissipation Figure 7. Current Derating, Ambient 10 3 IO, AVERAGE FORWARD CURRENT (A) TA, AMBIENT TEMPERATURE (°C) 100 2 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100T3G/NBRS2H100T3G 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 PULSE TIME (s) Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100T3G/NBRS2H100T3G http://onsemi.com 4 1000 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, TYPICAL CHARACTERISTICS 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 1000 PULSE TIME (s) Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100T3G/NRVBA2H100T3G 1000 50% (DUTY CYCLE) 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 PULSE TIME (s) Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100T3G/NRVBA2H100T3G 2.5 2.0 oz Power Based on TA = 25°C POWER DISSIPATION (W) R(t) (C/W) 100 2.0 1.0 oz 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 COPPER AREA (sq mm) Figure 13. PD, Junction−to−Ambient (URS copper area) http://onsemi.com 5 1000 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 A L c A1 SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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