Transistors IC SMD Type Product specification 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. (VCE=1V, IC=100mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 700 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 100 nA DC current gain * hFE VCE = 1.0 V, IC = 100 mA 110 VBE VCE = 6.0 V, IC = 10 mA 600 Base to emitter voltage * Collector saturation voltage * VCE(sat) IC = 700 mA, IB = 70 mA Output capacitance Cob Gain bandwidth product * Pulsed: PW 350 ìs, duty cycle fT 200 400 640 700 mV 0.22 0.6 V VCB = 6.0 V, IE = 0, f = 10 MHz 12 pF VCE = 6.0 V, IE = -10 mA 170 MHz 2% hFE Classification DV Marking Rank 1 2 3 4 5 hFE 110 180 135 220 170 270 200 320 250 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1