Product specification MMBT2907AW Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO -60 V Collector-base voltage VCBO -60 V Emitter-base voltage VEBO -5 V IC -600 mA Collector current Total Device Dissipation FR-5 Board PD 150 mW RèJA 833 /W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Thermal Resistance, Junction-to-Ambient * FR-5 = 1.0X 0.75 X0.062 in. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT2907AW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = -10 mA, IB = 0 -60 V Collector-base breakdown voltage V(BR)CBO IC = -10 mA, IE = 0 -60 V Emitter-base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Base cutoff current Collector cutoff current DC current gain * IBL VCE = -30 V, VEB(off) = -0.5 V -50 nA ICEX VCE = -30 V, VEB(off) = -0.5 V -50 nA HFE IC = -0.1 mA, VCE = -10 V IC = -1.0 mA, VCE = -10 V IC = -10 mA, VCE = -10 V IC = -150 mA, VCE = -10 V IC = -500 mA, VCE = -10 V VCE(sat) Collector-emitter saturation voltage * Base-emitter saturation voltage * VBE(sat) Current-gain-bandwidth product fT 75 100 100 100 50 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 IC = -150 mA, IB = -15 mA -1.3 IC = -500 mA, IB = -50 mA -2.6 IC = -50 mA, VCE = 20 V, f = 100 MHz 200 V MHz Output capacitance Cobo VCB = -10 V, IE = 0, f = 1.0 MHz 8.0 pF Input capacitance Cibo VEB = -2.0 V, IC = 0, f = 1.0 MHz 30 pF 45 ns 10 ns 40 ns 80 ns 30 ns 100 ns Turn?on time ton Delay time td Rise time tr Storage time ts Fall time tf Turn?off time * Pulse test: pulse width VCC = -30 V, IC = -150 mA, IB1 = -15 mA VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = 15 mA toff 300 ìs, duty cycle 2.0%. Marking Marking 20 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2