NTF6P02, NVF6P02 Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • • Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant −10 AMPERES −20 VOLTS RDS(on) = 44 mW (Typ.) S G Typical Applications • Power Management in Portables and Battery−Powered Products, D i.e.: Cellular and Cordless Telephones and PCMCIA Cards P−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 Vdc Gate−to−Source Voltage VGS ±8.0 Vdc ID ID −10 −8.4 −35 Adc Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W) Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM Apk PD 8.3 W TJ, Tstg −55 to +150 °C EAS 150 mJ RqJL RqJA RqJA 15 71.4 160 TL 260 August, 2013 − Rev. 6 1 Drain 4 4 1 2 3 AYW 6P02G G SOT−223 CASE 318E STYLE 3 1 Gate 2 3 Drain Source °C/W A = Assembly Location Y = Year W = Work Week 6P02 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) °C ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Steady State. 2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. © Semiconductor Components Industries, LLC, 2013 MARKING DIAGRAM & PIN ASSIGNMENT Package Shipping† NTF6P02T3G SOT−223 (Pb−Free) 4000 / Tape & Reel NVF6P02T3G* SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTF6P02T3/D NTF6P02, NVF6P02 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −20 − −25 −11 − − − − − − −1.0 −10 − − ± 100 −0.4 − −0.7 2.6 −1.0 − − − − 44 57 57 50 70 − gfs − 12 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = −250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = −4.5 Vdc, ID = −6.0 Adc) (VGS = −2.5 Vdc, ID = −4.0 Adc) (VGS = −2.5 Vdc, ID = −3.0 Adc) RDS(on) Forward Transconductance (Note 4) (VDS = −10 Vdc, ID = −6.0 Adc) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance Input Capacitance Output Capacitance Ciss − 900 1200 Coss − 350 500 Crss − 90 150 Ciss − 940 − Coss − 410 − Crss − 110 − (VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W) td(on) − 7.0 12 tr − 25 45 td(off) − 75 125 tf − 50 85 (VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W) td(on) − 8.0 − (VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge tr − 30 − td(off) − 60 − tf − 60 − ns ns QT − 15 20 Qgs − 1.7 − Qgd − 6.0 − (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = −2.1 Adc, VGS = 0 Vdc) (IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − − −0.82 −0.74 −0.68 −1.2 − − Vdc (IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) trr − 42 − ns ta − 17 − tb − 25 − QRR − 0.036 − (VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc) (Note 4) nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTF6P02, NVF6P02 −2.0 V −2.4 V −3.2 V −4.4 V 12 TJ = 25°C −1.8 V 6 −1.6 V 3 −1.4 V VGS = −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −2.2 V −ID, DRAIN CURRENT (AMPS) 12 −10 V −7.0 V −5.0 V 9 0 1 2 3 4 5 6 7 8 9 10 8 6 4 TJ = −55°C 2 0.5 1 1.5 2 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = −6.0 A TJ = 25°C 0.1 0.05 0 1 2 3 4 6 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 0.08 TJ = 25°C 0.07 VGS = −2.5 V 0.06 0.05 VGS = −4.5 V 0.04 0.03 0.02 2 4 6 8 10 12 14 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.6 10,000 ID = −6.0 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 TJ = 100°C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.15 1.4 TJ = 25°C −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.2 0 VDS ≥ −10 V 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 1.2 1000 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 100°C 100 2 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain−to−Source Leakage Current versus Voltage Figure 5. On−Resistance Variation with Temperature http://onsemi.com 3 20 NTF6P02, NVF6P02 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss 2400 1800 Crss 1200 Ciss 600 Coss Crss 0 10 10 15 20 −VDS 16 −VGS 3 12 Qgs Qgd 2 8 ID = −6.0 A TJ = 25°C 1 4 0 0 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 7 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −3.0 A VGS = −4.5 V td(off) 100 tf tr 10 1 4 20 QT GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 t, TIME (ns) 5 −VGS 0 −VDS 5 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS td(on) VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.6 0.9 1.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTF6P02, NVF6P02 TYPICAL ELECTRICAL CHARACTERISTICS RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.1 0.1 0.05 0.0175 W CHIP JUNCTION 0.0154 F 0.02 0.0710 W 0.2706 W 0.5779 W 0.7086 W 0.0854 F 0.3074 F 1.7891 F 107.55 F 0.01 AMBIENT SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 Figure 11. FET Thermal Response http://onsemi.com 5 1.0E+02 1.0E+03 NTF6P02, NVF6P02 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. D b1 DIM A A1 b b1 c D E e e1 L L1 HE 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 q C q A L STYLE 3: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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