TYSEMI FZT653

Transistors
SMD Type
Product specification
FZT653
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
+0.1
3.00-0.1
Low saturation voltage
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
ICM
6
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb=25
Ptot
2
W
Tj:Tstg
-55 to +150
Peak Pulse Current
Operating and Storage Temperature Range
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
FZT653
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100ìA
120
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA*
100
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100ìA
5
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
ICBO
IEBO
VCE(sat)
V
VCB=100V
0.1
ìA
VCB=100V,Tamb=100
10
ìA
VEB=4V
0.1
ìA
IC=1A, IB=100mA*
0.13
0.3
V
IC=2A, IB=200mA*
0.23
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA*
0.9
1.25
V
Base-Emitter Turn-On Voltage
VBE(on)
IC=1A, VCE =2V*
0.8
1.0
V
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
Switching Times
IC=50mA, VCE =2V*
70
200
IC=500mA, VCE =2V*
100
200
IC=1A, VCE =2V*
55
110
IC=2A, VCE =2V*
25
55
IC=100mA, VCE =5V,f=100MHz
140
175
VCB=10V, f=1MHz
ton
IC=500mA, VCC =10V
toff
IB1=IB2=50mA
300
MHz
30
pF
80
ns
1200
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT653
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2