TYSEMI FMMT3903

Product specification
FMMT3903
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Switching transistors
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
200
mA
Power dissipation
Ptot
330
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
IC
SMD Type
Product specification
FMMT3903
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=10ìA
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA
6
V
Collector cutoff current
ICEX
VCE=30V, VBE(off) =3V
Emitter cut-off current
IBEX
VCE=30V, VEB(off) =3V
DC current gain *
hFE
IC=10mA, VCE=1V
Collector-emitter saturation voltage *
IC=10mA, IB=1mA
VCE(sat)
IC=50mA, IB=5mA
Base-emitter saturation voltage *
VBE(sat)
Current-gain-bandwidth product
fT
50
IC=10mA, VCE=20V f=100MHz
nA
50
nA
150
0.65
IC=10mA, IB=1mA
IC=50mA, IB=5mA
50
0.2
0.3
V
0.85
0.95
V
250
MHz
Output capacitance
Cobo
VCB=5V, IE=0, f=100KHz
4
pF
Input capacitance
Cibo
VBE=0.5V, IC=0, f=100KHz
8
pF
Noise figure
NF
VCE=5V IC=200ìA,Rg=2KÙ
f=30Hz to 15KHz at-3dB points
6
dB
Delay time
td
35
ns
Rise time
tr
Storage time
ts
Fall time
tf
* Pulse test: tp
300ìs; d
VCC=3V, IC=10mA,IB1=1mA
VBE(off)=0.5V
VCC=3V, IC=10mA
IB1= IB2=1mA
35
ns
175
ns
50
ns
0.02.
Marking
Marking
1W
http://www.twtysemi.com
[email protected]
4008-318-123
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