Transistors SMD Type Product specification FZT688B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. +0.1 3.00-0.1 Gain of 400 at IC=3 Amps and very low saturation voltage. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Peak pulse current IC 4 A Continuous collector current ICM 10 A Ptot 2 W Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT688B Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 12 V Breakdown Voltages V(BR)CEO IC=10mA 12 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V Collector Cut-Off Current ICBO VCB=10V 0.1 ìA Emitter Cut-Off Current IEBO VEB=4V 0.1 ìA Collector-emitter saturation voltage * IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=50mA IC=3A, IB=20mA IC=4A, IB=50mA 0.04 0.06 0.18 0.35 0.40 V Base-emitter saturation voltage * VBE(sat) IC=3A, IB=20mA 1.1 V Base-Emitter Turn-On Voltage * VBE(on) IC=3A, VCE=2V 1.0 V Static Forward Current Transfer Ratio* Transitional frequency hFE fT IC=0.1A, VCE=2V IC=3A, VCE=2V IC=10A, VCE=2V 500 400 100 IC=50mA, VCE=5V f=50MHz 150 MHz Input capacitance Cibo VEB=0.5V, f=1MHz 200 pF Output capacitance Cobo VCB=10V, f=1MHz 40 pF Turn-on time t(on) IC=500mA, VCC=10V 40 ns Turn-off time t(off) IB1=50A,IB2=50mA 500 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking FZT688B http://www.twtysemi.com [email protected] 4008-318-123 2 of 2