Transistors IC SMD Type Product specification FZT491 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Continuous Collector Current IC 1 A power dissipation PC 2 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector to base breakdown voltage VCBO IC=100μA 80 Collector to emitter breakdown voltage VCEO IC=10mA 60 V Emitter to base breakdown voltage VEBO IE=100μA 5 V Collector cutoff current ICBO VCB = 60 V, IE = 0 Emitter Cut-Off Current IEBO VEB=4V,IC=0 DC current gain hFE Collector to emitter saturation voltage VCE(sat) Output capacitance Cob Transition frequency fT IC = 1.0 mA; VCE = 5V 100 IC = 500mA; VCE = 5V 100 IC = 1A; VCE = 5V 80 V 100 nA 100 nA 300 IC = 500mA; IB = 50mA 0.25 IC = 1A; IB = 100mA 0.5 V VCB = 10 V, IE = 0,f=1.0MHz 10 pF IC = 50 mA; VCE =10V; f = 100 MHz 150 V MHz ■ Marking Marking 491 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1