ANASEM MRX1518HTA

AnaSem
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Analog Semiconductor IC
MRX1518H Series
Low power consumption, 1.5mT High sensitivity
CMOS MR Magnetic Sensor Switch
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Rev. E13-01
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.......... Future of the analog world
Rev. E13-01
Products Data Sheet
AnaSem
Analog Semiconductor IC
Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
GENERAL DESCRIPTIONS
MRX1518H series are monolithic ICs with built-in MR magnet resistive
element and CMOS switch. It becomes the non-contact switch with low
current consumption, high sensitivity and reliability which is combined
with magnet.
A horizontal magnetic field parallel to the electrode of the package can
be detected by an arbitrary polarity. (N pole ⇔ S pole)
HALOGEN
RoHS
COMPLIANCE
FEATURES
CMOS + MR monolithic structure
Low current consumption ···············································································
1.6µA (VIN=1.8V, Ta=25°C)
High-sensitivity ···············································································
Typ. 1.5mT
Operating temperature range ··························································
-40 ~ +85°C
Operating voltage range ································································
1.6V ~ 5.5V
Detection pulse driving cycle ································································
Typ. 50msec with 25µsec width
Magnetic direction ·································································································
Both direction / CMOS inverter one output
Detection magnetic field ··························································································
Horizontal direction of marked side of package
(Electrode parallel both direction)
SOT-23 (2.9×2.8×1.1mm)
Small package ································································
APPLICATIONS
Detection of opening and closing : Mobile phone, Notebook PC, Microwave oven, Washing machine,
Rice cooker, Refrigerator, Electronic dictionary, Digital camera, etc.
Detection of position : Air cylinder, Antitheft window, Digital door lock, etc.
Detection of water level : Water purifier, Humidifier, Bidet, etc.
Detection of rotation : Water meter, Gas meter, Wattmeter, Speed meter, etc.
Power supply switch : Cordless phone, Electric toothbrush, etc.
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.......... Future of the analog world
Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
PRODUCTS NUMBERING GUIDE
MRX1518H
Design version
A : CMOS output
Package form
T : SOT-23 (2.9×2.8×1.1mm)
Detection pulse cycle
H : Typ. 50msec with 25µsec width
Operating voltage
18 : 1.6V ~ 5.5V
Detection sensitivity
15 : Typ. 1.5mT
PIN CONFIGURATION / MARKING SPECIFICATION
Pin Configuration
Vss
3
A B C
No.
Symbol
1
VIN
2
VOUT
3
VSS
Descriptions
Voltage input
Output
D D D D D
Power ground
2
1
Vin
Vout
Marking Specification
(Top view)
Code
Mark
Contents
A
M
Series name
BC
AA
Products specification & version
D
Internal rule
Lot number
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
BLOCK DIAGRAM
Direction of magnetic field
Switch
VOUT
Sampling circuit
R1
R2
Latch circuit
VSS
R3
R4
CMOS drive circuit
T1
VIN
ABSOLUTE MAXIMUM RATINGS
Items
Symbol
Min.
Typ.
Max.
Conditions
Operating temperature
TOPR
-40
-
+85
°C
Storage temperature
TSTG
-50
-
+125
°C
Supply voltage
VMAX
VIN-0.3
-
VIN+6.0
V
Assembly temp. condition
TASY
-
255
260
t=max:5sec/Tmax
Unit
°C
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, VDD=1.8V, Ta=25°C)
Items
Symbol
Min.
Typ.
Max.
Operating voltage
VIN
1.6
1.8
5.5
Current consumption
IAVG
-
1.6
3.0
Avg. current at VIN=1.8V
ts
-
50
90
Pulse width : 1/2000
“H”-level output voltage
VOH
0.9VIN
-
-
IOUT=+1.0mA
V
“L”-level output voltage
VOL
-
-
0.1VIN
IOUT=-1.0mA
V
Detection pulse driving cycle
Conditions
Unit
V
µA
msec
MAGNETIC CHARACTERISTICS
(Unless otherwise specified, VDD=1.8V, Ta=25°C)
Items
Magnetic flux density at operating point (H→L)
Magnetic flux density at release point (L→H)
Width of hysteresis
Symbol
Min.
Typ.
Max.
MOPS
1.0
*
1.5
2.2
MOPN
-2.2
-1.5
-1.0
MRPS
0.8
1.2
1.9
MRPN
-1.9
*
-1.2
-0.8
MHYS
0.1
*
0.3
0.8
*
Unit
mT
*
*
mT
mT
Note : The values with [*] marks are guaranteed by design, not tested in production.
MAGNETIC-ELECTRIC CONVERSION CHARACTERISTIC
VOUT
VOH
N-pole
S-pole
VOL
MHYS
MHYS
Magnetic flux density
MRPN
MOPN
0
MRPS
MOPS
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
MAGNETIC FLUX DENSITY AND OUTPUT VOLTAGE LEVEL
Conditions
Magnet & Power
Magnet = OFF
Magnet = ON
Magnet = OFF
/
/
Power = ON
Power = ON
/
Output level
Magnet flux density
Power = ON
M = 0mT
High-level
M ≧ 2.2mT
Low-level
M ≦ 0.8mT
High-level
DETECTION PULSE DRIVING CYCLE (SAMPLING CYCLE)
IDD
Period (Typ. 50mS)
(VDD=1.8V)
Awake (25µS)
IDD ON (Typ. 1.8mA)
Sleep (Output latched)
IDD AVG (Typ. 1.6µA)
IDD OFF (Typ. 1.3µA)
time
OUTPUT SWITCHING TIMING CHART
On
Sampling
pulse
MHYS
Off
Magnetic
flux
MOP
(Typ. 1.5mT)
MRP
(Typ. 1.2mT)
H-level
VOUT
L-level
Latch
Latch
Latch
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
TEST CIRCUIT
S or N
Direction of magnetic field
VOUT
VSS
15pF
(including
probe capacitance)
VIN
A
N or S
STANDARD MAGNET SPECIFICATIONS
P-point : Magnetic flux density measuring position
0.5mm
Magnet maker : TDK Corp. / Japan
Neodymium magnet
Magnetic specification : NE047BW
Size : 4.0 × 3.0 × 0.5mm
3.0mm
4.0mm
Magnetization direction
for reaction of sensor
DETECTION DISTANCE SIMULATION (with standard magnet)
Vertical direction (VD)
Horizontal direction (HD)
( HD = 0mm )
( VD = 3mm )
20
10
9
Standard magnet
Detection point of sensor
16
Magnetic flux density (mT)
Magnetic flux density (mT)
18
14
12
10
8
6
4
2
0
1.5mT
2
4
6
8
10
12
14
16
18
20
Standard magnet
Detection point of sensor
8
7
6
5
4
3
2
1.5mT
1
0
2
Vertical distance (mm)
4
6
8
10
12
14
16
18
20
Horizontal distance (mm)
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
TYPICAL ELECTRIC CHARACTERISTICS
Magnetic flux density vs. Input voltage
Magnetic flux density vs. Ambient temp.
(Ta=25°C)
(VIN=1.8V)
2
1
3
Magnetic flux density (mT)
Magnetic flux density (mT)
3
MOPS
MRPS
0
-1
MRPN
-2
MOPN
-3
2
MOPS
1
MRPS
0
-1
MRPN
-2
MOPN
-3
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Input voltage (V)
Temperature (°C)
Current consumption vs. Input voltage
Current consumption vs. Ambient temp.
7
6
6
Current consumption (µA)
Current consumption (µA)
(Ta=25°C)
7
5
4
3
2
1
0
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
(VIN=1.8V)
5
4
3
2
1
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
Input voltage (V)
Sampling period vs. Input voltage
Sampling period vs. Ambient temp.
90
80
80
Sampling period (msec)
Sampling period (msec)
(Ta=25°C)
90
70
60
50
40
(VIN=1.8V)
70
60
50
40
30
30
20
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
20
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
Input voltage (V)
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
APPLICATION INFORMATIONS
Detection of magnetic field
To operate output switch, the magnetic field should be applied to the sensor with sufficient magnetic
flux density and correct direction. MR series are designed to be ON-state (L-level output) when the
horizontal direction magnetic field is applied in parallel to the marked side of sensor, with sufficient
magnetic flux (MOPS or MOPN value) regardless of polarity of magnet. Because MR series detect the
horizontal direction magnetic field, it has not influence of the reverse-magnetic field. And also, MR
series detect the vertical direction magnetic field according to the level of magnetic flux, so that it is
possible to apply to not only slide type but also fold type.
Front view
VSS
Top view
N or S
S or N
35°
Detection direction
N or S
S or N
35°
(Marked side)
VIN
VOUT
VIN
VOUT
Application example 1 -- [Fold type]
VD
Magnet
MR sensor
VD
VD
Position B
Output level = Low → High
Position A
Output level = Low
Position C
Output level = High
In case MR series is used for fold type cellular phone, IC sense the conditions of opening and shutting
of the cover by detection of the magnetic flux according to the distance between IC and magnet.
In position A, output is L-level (ON-state) because the detected magnetic flux is sufficient. The
magnetic flux decrease according to the magnet is moved from IC (Position A→B). Then the IC is
turned H-level (OFF-state) because the magnetic flux become MRP or less (Position B→C).
Moving
direction
Moving
direction
S or N
Magnetic field direction
N or S
S or N
Moving
direction
Magnetic field direction
N or S
Moving
direction
Detection direction
Detection direction
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
Application example 2 -- [Slide type & Rotary type]
Magnet
VD
MR sensor
HD
HD
Position A
Position B
Position C
Output level = Low
Output level = Low → High
Output level = High
Magnet
MR sensor
MR sensor
Position A
Output level = High → Low
MR sensor
Position B
Output level = Low
MR sensor
Position C
Output level = Low → High
Position D
Output level = High
In the detection of the slide type, there are two ways of arrangement of magnetic field detecting
direction against moving direction. One is parallel and another is cross with moving direction.
In case of parallel positioning of magnetic field with moving direction [arrangement 1], the output of IC
might be L-level (ON-state) → H-level (OFF-state) → L-level (ON-state) → H-level (OFF-state) due to
reverse-magnetic field.
To prevent from this malfunction, it is recommended to arrange the detection direction of sensor and
magnetic field to be crossed with moving direction of cover [arrangement 2].
S or N
Moving
direction
Moving
direction
N or S
Moving
direction
S or N
Moving
direction
Magnetic field direction
Magnetic field direction
N or S
Detection direction
Detection direction
[Arrangement 1]
[Arrangement 2]
Parallel the direction of detection magnetic field
with the moving direction
Cross the direction of detection magnetic field
with the moving direction
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
PACKAGE DIMENSIONS (SOT-23)
(Unit : mm)
0.65 –0.15
+0.10
2.9±0.2
1.1~1.3
0~0.35
0.45
1.6±0.15
2.8±0.2
+0.10
0.4 –0.15
(Marked Side)
0~0.1
3~7°
+0.10
+0.10
0.16 –0.15
+0.10
0.95
+0.10
0.4 –0.15
0.65 –0.15
0.4 –0.15
0.95
1.9±0.2
2.9±0.2
1.1~1.3
Recommended land pattern
1.0
2.4
0~0.1
+0.10
0.4 –0.15
0.8
1.0
0.8
1.0
0.8
0.95
0.95
1.9
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
TAPING AND LOADING SPECIFICATIONS (SOT-23)
(Unit : mm)
1.65 max.
Mark
ø1.05±0.05
3.5±0.05
3.3±0.1
Mark
2.0±0.05
4.0±0.1
8.0±0.2
ø1.5 +0.1
–0
0.2±0.05
1.75±0.1
4.0±0.1
3.35±0.1
Taping direction
REEL DIMENSIONS (SOT-23)
(Unit : mm)
120°
ø60±1
2.0±0.5
(3,000 pcs / reel)
ø178±2
ø13±0.5
90°
9.0±0.5
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any notice in order to supply the best products through improve the design and performance. Customers are
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information required is the newest. It is necessary for customers to fully understand the products described in this
data sheet and to use it in accordance with its specifications. The products described in this data sheet are not
intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the
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Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1518H Series
Rev. E13-01
GENUINE PRODUCT LEGITIMATE LABEL DEFINITION
Green colored Circle “RoHS” Label
Other specific customized Labels
Ordinary Product Information Bar
Code
Our internal Outgoing Check Code 3
Our Internal QR Check Code 2
AnaSem Logo and Brand Name
(Black color Logo)
Our Internal Product Check Code 1
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correct contact information as shown
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