WHXPCB AO4447

万和兴电子有限公司 www.whxpcb.com
AO4447
30V P-Channel MOSFET
General Description
Product Summary
The AO4447 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected.
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.5mΩ (VGS = -10V)
Max RDS(ON) < 12mΩ (VGS = -4V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
TA=70°C
Avalanche Current G
Power Dissipation A
G
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±20
V
ID
-13.6
IDM
-60
IAR
40
A
EAR
240
mJ
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-15
B
Repetitive avalanche energy L=0.3mH
TA=25°C
Maximum
-30
RθJA
RθJL
Typ
26
50
14
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4447
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.9
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
TJ=125°C
VGS=-4V, ID=-13A
Forward Transconductance
VDS=-5V, ID=-15A
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V)
Gate Charge
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
-1.25
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-15A
-1.6
µA
µA
V
A
6.7
7.5
9.4
12
9.2
12
60
-0.69
5500
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
-10
±10
VGS=-10V, ID=-15A
VSD
Units
-1
Zero Gate Voltage Drain Current
gFS
Max
V
VDS=-30V, VGS=0V
IDSS
Crss
Typ
mΩ
mΩ
S
-1
V
5.5
A
6600
pF
745
pF
473
pF
3.1
4
Ω
88.8
120
nC
45.2
60
nC
10.1
nC
Gate Drain Charge
19.4
nC
Turn-On DelayTime
12
ns
11.5
ns
VGS=-10V, VDS=-15V, RL=1.7Ω,
RGEN=3Ω
100
ns
40
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-15A, dI/dt=100A/µs
46.6
Qrr
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
67.7
60
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev7: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4447
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
25
-10V
VDS=-5V
-3.5V
50
20
-3V
15
-ID(A)
-ID (A)
125°C
-4V
40
30
10
20
25°C
VGS=-2.5V
10
5
0
0
0
1
2
3
4
1
5
1.5
-VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
1.6
Normalized On-Resistance
RDS(ON) (mΩ )
12
VGS=-4V
10
8
VGS=-10V
6
VGS=-4V
ID=-13A
1.4
VGS=-10V
ID=-15A
1.2
1
0.8
0.6
0
5
10
15
20
25
-50
-25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+01
ID=-15A
25
1.0E+00
125°C
1.0E-01
20
15
-IS (A)
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
125°C
1.0E-02
25°C
1.0E-03
10
1.0E-04
25°C
5
1.0E-05
0
0.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4447
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=-15V
ID=-15A
7000
Ciss
6000
Capacitance (pF)
-VGS (Volts)
8
6
4
5000
4000
3000
Crss
Coss
2000
2
1000
0
0
0
20
40
60
80
100
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
80
1ms
Power (W)
-ID (Amps)
10ms
0.1s
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
30
TJ(Max)=150°C
TA=25°C
100µs
10.0
60
40
20
DC
0.1
0.1
10
100
10µs
RDS(ON)
limited
5
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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