TYSEMI FZTA42

Transistors
SMD Type
Product specification
FZTA42
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
Features
+0.1
3.00-0.1
Suitable for video output stages in TV sets
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
and switch mode power supplies
High breakdown voltage
1 Base
1
2 Collector
3
2
3 Emitter
+0.1
0.70-0.1
2.9
4 Collector
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
IB
100
mA
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25
Ptot
2
W
Tj:Tstg
-55 to +150
Base Current
Operating and Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100ìA, IE=0
300
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0*
300
V
Emitter-Base Breakdown Voltage
5
V(BR)EBO
IE=100ìA, IC=0
Collector Cut-Off Current
ICBO
VCB=200V, IE=0
0.1
ìA
Emitter Cut-Off Current
IEBO
VEB=5V, IC=0
0.1
ìA
IC=20mA, IB=2mA
0.5
V
0.9
V
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
IC=20mA, IB=2mA
IC=1mA, VCE=10V*
25
IC=10mA, VCE=10V*
40
IC=30mA, VCE=10V*
40
IC=10mA, VCE=20V,f=20MHz
50
VCB=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
http://www.twtysemi.com
[email protected]
V
MHz
6
pF
2%
4008-318-123
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