MICROWAVE POWER GaAs FET TIM5964-8SL-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 28.5dBm, Single Carrier Level HIGH POWER P1dB=39.5dBm at 5.85GHz to 6.75GHz HIGH GAIN G1dB=8.0dB(Min.) at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise ηadd G1dB IDS1 ( Ta= 25°C ) CONDITIONS UNIT dBm MIN. 38.5 dB 8.0 ⎯ ⎯ A ⎯ 2.2 2.6 dB % dBc ⎯ ⎯ -42 ⎯ 35 -45 ±0.6 A °C ⎯ ⎯ 2.2 2.6 80 UNIT mS MIN. MAX. ⎯ TYP. 1800 V -1.0 -2.5 -4.0 A ⎯ 5.2 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 2.5 3.8 VDS=10V f= 5.85 to 6.75GHz ΔG IM3 IDS2 ΔTch Two-Tone Test Po=28.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) TYP. MAX. 39.5 ⎯ ⎯ ⎯ ⎯ Recommended gate resistance(Rg) : Rg= 150 Ω (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25°C ) Gm VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5964-8SL-422 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 7.0 Total Power Dissipation (Tc= 25 °C) PT W 39.5 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5964-8SL-422 RF PERFORMANCE Output Power vs. Frequency Output Power vs. Frequency 42 VDS= 10 V IDS≅ 2.2 A Pin= 30.5 dBm Po(dBm) Po (dBm) 41 40 39 38 37 5.75 6.00 6.25 6.50 6.75 Frequency Frequency(GHz) (GHz) Output Powervs.vs.Input Input Power Output Power Power 100 f=6.75 GHz VDS= 10 V IDS≅ 2.2 A 41 90 80 Po Po 70 60 37 50 ηadd ηadd 40 35 30 20 33 10 24 26 28 Pin (dBm) Pin(dBm) 3 30 32 ηadd(%) Po(dBm) Po (dBm) 39 TIM5964-8SL-422 POWER DISSIPATION VS. CASE TEMPERATURE Power Dissipation vs. Case Temperature 50 45 40 35 PPT T(W) (W) 30 25 20 15 10 5 0 0 40 80 120 160 200 Tc (℃) Tc(°C) IM3vs. vs. Output OUTPUT Power POWER CHARACTERISTICS IM3 Characteristics -10 VDS= 10 V IDS≅ 2.2 A f= 6.3GHz Δf= 5MHz IM IM33(dBc) (dBc) -20 -30 -40 -50 -60 24 26 28 30 32 Po (dBm), Single Carrier Level Po(dBm), Single Carrier Level 4 34