Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg Tested APPLICATIONS • DC/DC Converters • Synchronous Rectifiers SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Steady State 30 Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 20 13 15 10 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range Unit V ± 20 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID 10 s A W °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 29 67 35 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71824 S09-0221-Rev. E, 09-Feb-09 www.vishay.com 1 Si4406DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. 1.0 1.95 Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≥ 5 V, VGS = 10 V a µA 30 A VGS = 10 V, ID = 20 A 0.0035 0.0045 VGS = 4.5 V, ID = 19 A 0.0043 0.0055 gfs VDS = 15 V, ID = 20 A 95 VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 34 50 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 20 A 10 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 15 IF = 2.9 A, dI/dt = 100 A/µs 1.3 2.2 21 35 15 25 100 150 30 45 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 V thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 3V 40 30 20 TC = 125 °C 10 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 Document Number: 71824 S09-0221-Rev. E, 09-Feb-09 Si4406DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.010 7000 0.008 5600 C - Capacitance (pF) R DS(on) - On-Resistance ( Ω) Ciss 0.006 VGS = 4.5 V 0.004 VGS = 10 V 2800 0.002 1400 0.000 0 0 10 20 30 40 50 Coss Crss 0 6 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.8 VDS = 15 V ID = 20 A VGS = 10 V ID = 20 A 1.6 R DS(on) - On-Resistance (Normalized) 5 4 3 2 1 1.4 1.2 1.0 0.8 0 0 10 20 30 40 0.6 - 50 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.020 R DS(on) - On-Resistance (Ω) 50 I S - Source Current (A) 12 On-Resistance vs. Drain Current 6 VGS - Gate-to-Source Voltage (V) 4200 TJ = 150 °C 10 TJ = 25 °C 0.016 ID = 20 A 0.012 0.008 0.004 0.000 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71824 S09-0221-Rev. E, 09-Feb-09 10 www.vishay.com 3 Si4406DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 60 0.4 50 0.2 40 Power (W) V GS(th) Variance (V) ID = 250 µA 0.0 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 - 2 10 - 1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 10 - 2 4. Surface Mounted 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71824. www.vishay.com 4 Document Number: 71824 S09-0221-Rev. E, 09-Feb-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1