2SB1205 Ordering number : EN2114C SANYO Semiconductors DATA SHEET 2SB1205 PNP Epitaxial Planar Silicon Transistor Strobe High-Current Switching Applications Applications • Flash, voltage regulators, relay drivers, lamp drivers Features • • • • Low saturation voltage Adoption of FBET, MBIT processes • Large current capacity Fast switching speed Small and slim package making it easy to make 2SB1205-applied sets smaller Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit --25 V --20 V --5 V --5 A --8 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 3 2.3 1 0.5 2.5 0.8 0.8 1.6 0.85 1.2 2 3 0 to 0.2 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2SB1205S-TL-E 2SB1205T-TL-E 1.2 0.85 0.7 0.5 1.5 4 5.5 5.5 4 2.3 6.5 5.0 2SB1205S-E 2SB1205T-E 7.0 1.5 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 B1205 1 RANK LOT No. TL 3 http://www.sanyosemi.com/en/network/ D0512 TKIM TC-00002845/N2503TN (KT)/92098HA (KT)/8219MO/4137KI/4116KI, TS No.2114-1/9 2SB1205 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Unit --0.5 A 1 W 10 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO hFE1 VCE=--2V, IC=500mA Gain-Bandwidth Product hFE2 fT VCE=--2V, IC=--4A VCE=--5V, IC=--200mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=--10V, f=1MHz IC=--3A, IB=--60mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time V(BR)CBO V(BR)CEO Ratings min typ max Unit VCB=--20V, IE=0A --500 nA VEB=--4V, IC=0A --500 nA 100* 400* 60 320 MHz 60 pF --250 --500 --1.0 --1.3 mV IC=--3A, IB=--60mA IC=--10μA, IE=0A --25 V V IC=--1mA, RBE=∞ --20 V(BR)EBO ton IE=--10μA, IC=0A --5 tstg tf See specified Test Circuit. V V 40 ns 200 ns 10 ns * : The 2SB1205 is classified by 500mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100μF VBE=5V + 470μF VCC= --10V IC=10IB1= --10IB2= --2A Ordering Information Device 2SB1205S-E 2SB1205T-E Package Shipping TP 500pcs./bag TP 500pcs./bag 2SB1205S-TL-E TP-FA 700pcs./reel 2SB1205T-TL-E TP-FA 700pcs./reel memo Pb Free No.2114-2/9 2SB1205 IC -- VCE --4 Collector Current, IC -- A mA From top --100mA --90mA --80mA --70mA --60 --30mA --20mA --2 --10mA --25mA --20mA --3 --15mA --10mA --2 --5mA --1 IB=0 0 0 --0.2 --0.4 --0.6 --1.0 0 --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE -- V ITR09216 IC -- VBE --6 IB=0 0 --0.8 Collector-to-Emitter Voltage, VCE -- V ITR09217 hFE -- IC 1000 VCE= --2V VCE= --2V 7 --5 5 DC Current Gain, hFE Collector Current, IC -- A --35mA --30mA --4 --1 --4 --3 Ta= 75 25° °C C --25 °C --2 --1 Ta=75°C 25°C --25°C 3 2 100 7 5 3 2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 5 2 --0.01 3 5 --0.1 2 3 5 2 --1.0 3 Collector Current, IC -- A ITR09218 f T -- IC 1000 VCE= --5V 7 5 --10 ITR09219 Cob -- VCB 3 f=1MHz 2 5 Output Capacitance, Cob -- pF Gain-Brandwidth Product, f T -- MHz 40mA -- --40mA --3 3 2 100 7 5 100 7 5 3 2 3 10 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 3 3 2 --100 7 25°C Ta= --25°C 3 75°C 2 --1.0 2 3 5 7 2 --10 3 ITR09221 VBE(sat) -- IC --10 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 5 5 7 Collector-to-Base Voltage, VCB -- V IC / IB=50 7 5 ITR09220 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV IC -- VCE --5 --50mA Collector Current, IC -- A --5 7 5 3 2 --1.0 Ta= --25°C 25°C 7 75°C 5 3 --10 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 Collector Current, IC -- A 2 3 5 --10 ITR09222 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 Collector Current, IC -- A 2 3 5 --10 ITR09223 No.2114-3/9 2SB1205 ASO 10 10 m 0m s 3 DC 2 tio n( Ta = C) 5° =2 Tc n( tio era op op era --1.0 s s 1m 5 ICP= --8A IC= --5A DC Collector Current, IC -- A --10 25 °C 5 ) 3 2 --0.1 5 Tc=25°C Single pulse 3 --0.1 2 3 PC -- Ta 12 Collector Dissipation, PC -- W 2 10 8 6 4 2 No heat sink 1 0 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR09224 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09225 No.2114-4/9 2SB1205 Taping Specification 2SB1205S-TL-E, 2SB1205T-TL-E No.2114-5/9 2SB1205 Outline Drawing 2SB1205S-TL-E, 2SB1205T-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2114-6/9 2SB1205 Bag Packing Specification 2SB1205S-E, 2SB1205T-E No.2114-7/9 2SB1205 Outline Drawing 2SB1205S-E, 2SB1205T-E Mass (g) Unit 0.315 mm * For reference No.2114-8/9 2SB1205 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2012. Specifications and information herein are subject to change without notice. PS No.2114-9/9