RoHS 2SD880 2SD880 TRANSISTOR (NPN) D T ,. L TO—220 FEATURES Power dissipation 1. BASE 2. COLLECTOR 3. EMITTER PCM: 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol C O 123 IC N unless otherwise specified) O Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=50mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 7 V R T C E L Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage E ICBO VCB=60V, IE=0 100 µA IEBO VEB=7V, IC=0 100 µA hFE VCE=5V, IC=500mA VCE (sat) IC=3A, IB=300mA 1 V VBE IC=0.5A, VCE= 5V 1 V Base-emitter saturation voltage J E Transition Frequency f Collector output capacitance T Cob Turn on time 60 VCE=5 V, IC=500mA 3 MHz VCE=10V, IE=0, f=1MHz 70 pF 0.8 µs 1.5 µs 0.8 µs ton W Storage time ts Fall time t 300 IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs f CLASSIFICATION OF hFE Rank O Y GR Range 60-120 100-200 150-300 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]