ACE ACE2341_12

ACE2341
P-Channel Enhancement Mode MOSFET
Description
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
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-20V/-3.3A, RDS(ON)[email protected]=-4.5V
-20V/-2.8A, RDS(ON)= [email protected]=-2.5V
-20V/-2.3A, RDS(ON)= [email protected]=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-4.0
-2.8
A
Pulsed Drain Current
IDM
-12
A
Continuous Source Current (Diode Conduction)
IS
-1.0
A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
0.8
W
Operating Junction Temperature
TJ
-55/150 ℃
Storage Temperature Range
TSTG
-55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA
140
℃/W
VER 1.3
1
ACE2341
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
SOT-23-3 Description
1
Gate
2
Source
3
Drain
1
2
Ordering information
ACE2341 XX + H
Halogen - free
Pb - free
BM: SOT-23-3
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-20
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-0.35
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
-1
VDS=-20V, VGS=0V TJ=55℃
-10
On-State Drain Current
ID(ON)
Unit
Static
Drain-Source On-Resistance
RDS(ON)
VDS≦-5V, VGS=-4.5V
V
-0.9
nA
uA
-6
A
VGS=-4.5V, ID=-3.3A
0.036 0.045
VGS=-2.5V, ID=-2.8A
0.045 0.055
VGS=-1.8V, ID=-2.3A
0.055 0.065
Forward Transconductance
Gfs
VDS=-5.0V, ID=-3.3A
3
Diode Forward Voltage
VSD
IS=-1.6A, VGS=0V
-0.8
-1.2
8
13
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-6V, VGS=-4.5V,
ID≡-3.3A
1.2
nC
2.2
VER 1.3
2
ACE2341
P-Channel Enhancement Mode MOSFET
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
VDS=-6V, VGS=0V,
f=1MHz
td(on)
tr
td(off)
VDD=-6V, RL=6Ω
ID≡-1.0A, VGEN=-4.5V
RG=6Ω
tf
700
160
pF
120
15
25
35
55
60
90
40
60
ns
Typical Characteristics
Output Characteristics
VDS – Drain to Source Voltage (V)
On-Resistance vs. Drain Current
ID – Drain Current (A)
Transfer Characteristics
VGS – Gate to Source Voltage (V)
Capacitance
VDS – Drain to Source Voltage (V)
VER 1.3
3
ACE2341
P-Channel Enhancement Mode MOSFET
Typical Characteristics
Gate Charge
Og Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
VSD Source to Drain Voltage (V)
Normalized On-Resistance vs. Junction Temperature
TJ – Junction Temperature (℃)
On-Resistance vs. Gate-to-Source Voltage
VGS – Gate to Source Voltage (V)
VER 1.3
4
ACE2341
P-Channel Enhancement Mode MOSFET
Typical Characteristics
Threshold Voltage
Single Pulse Power
TJ – Temperature
Time(sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration(sec)
VER 1.3
5
ACE2341
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
VER 1.3
6
ACE2341
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
7