IRF IRFH4210PBF

FastIRFET™
IRFH4210PbF
HEXFET® Power MOSFET
VDSS
25
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
V
1.10
m
1.35
Qg (typical)

nC
ID
(@TC (Bottom) = 25°C)
245
A
PQFN 5X6 mm
Applications

Synchronous Rectifier MOSFET for Synchronous Buck Converters

Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

Active ORing and Hot Swap

Battery Operated DC Motor Inverters
Features
Low RDSon (<1.10m)
Low Thermal Resistance to PCB (<1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
Standard Pack
Form
Quantity
Tape and Reel
4000
Package Type
IRFH4210PbF
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
PQFN 5mm x 6 mm
Orderable Part Number
IRFH4210TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
45
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
245
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
155
IDM
Pulsed Drain Current 
400
PD @TA = 25°C
Power Dissipation 
3.6
PD @TC(Bottom) = 25°C
Power Dissipation 
104
Linear Derating Factor 
TJ
Operating Junction and
TSTG
Storage Temperature Range
0.029
-55 to + 150
A
W
W/°C
°C
Notes  through  are on page 8
1
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© 2013 International Rectifier
August 07, 2013
IRFH4210PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BVDSS/TJ
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Total Gate Charge
Qg
Qg
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Qgs1
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy 
Avalanche Current 
IAR
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
Thermal Resistance
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
251
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
0.85
1.10
1.6
-6.0
–––
–––
–––
–––
74
36
9.4
4.6
13
9.0
17.6
34
1.2
20
44
24
15
4760
1310
370
Max.
–––
–––
1.10
1.35
2.1
–––
1.0
100
-100
–––
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 50A 
VGS = 4.5V, ID = 50A 
V
VDS = VGS, ID = 100µA
mV/°C
µA VDS = 20V, VGS = 0V
nA VGS = 20V
VGS = -20V
S
VDS = 10V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
nC
nC
 ns
pF
Parameter
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 50A
RG=1.8
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
195
50
Min.
–––
Typ.
–––
Max.
245
–––
–––
400
Units
Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
TJ = 25°C, IS = 50A, VGS = 0V 
ns TJ = 25°C, IF = 50A, VDD = 13V
nC di/dt = 300A/µs 
D
G
S
–––
–––
–––
–––
26
51
1.0
39
77
RJC (Bottom) Junction-to-Case 
Junction-to-Case 
RJC (Top)
VDS = 13V
VGS = 4.5V
ID = 50A
Typ.
–––
Max.
1.2
Units
–––
21
°C/W
RJA
Junction-to-Ambient 
–––
35
RJA (<10s)
Junction-to-Ambient 
–––
21
2
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© 2013 International Rectifier
August 07, 2013
IRFH4210PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
100
10
1
2.5V
BOTTOM
10
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
0.1
1
10
0.1
100
1000
100
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
10
VDS = 15V
60µs PULSE WIDTH
1.0
ID = 50A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20 0
VGS, Gate-to-Source Voltage (V)
100000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = Cgd
VGS, Gate-to-Source Voltage (V)
ID= 50A
C oss = C ds + C gd
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
10000
Ciss
Coss
1000
Crss
100
12.0
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
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© 2013 International Rectifier
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
August 07, 2013
IRFH4210PbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
TJ = 150°C
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100µsec
100
10
Limited by Package
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1.2
1
10
100
VDS , Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
250
VGS(th), Gate threshold Voltage (V)
Limited by package
200
150
100
50
2.4
2.0
1.6
1.2
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1A
0.8
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
TJ , Temperature ( °C )
TC , Case Temperature (°C)
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
Thermal Response ( ZthJC ) °C/W
ID, Drain Current (A)
DC
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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© 2013 International Rectifier
August 07, 2013
IRFH4210PbF
900
5.0
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m)
ID = 50A
4.0
3.0
TJ = 125°C
2.0
1.0
TJ = 25°C
ID
13A
25A
BOTTOM 50A
800
TOP
700
600
500
400
300
200
100
0
0.0
2
4
6
8
10
12
14
16
18
25
20
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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© 2013 International Rectifier
August 07, 2013
IRFH4210PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 16a. Unclamped Inductive Test Circuit
Fig 17a. Switching Time Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 18. Gate Charge Test Circuit
6
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Qgd
Qgodr
Fig 19. Gate Charge Waveform
August 07, 2013
IRFH4210PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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© 2013 International Rectifier
August 07, 2013
IRFH4210PbF
PQFN 5x6 Outline "B" Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information† Industrial†
(per JEDEC JESD47F†† guidelines)
Qualification Level PQFN 5mm x 6mm
Moisture Sensitivity Level
MSL1
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.156mH, RG = 50, IAS = 50A.
Pulse width  400µs; duty cycle  2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
 Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.





Revision History
Date
05/13/2013 08/07/13 
Comments
Updated package 3D drawing, on page 1.

Updated current rating based on max rating not limited by package, on pages 1 and 2.

Added "FastIRFET™" above part number on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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© 2013 International Rectifier
August 07, 2013