FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET VDSS 25 RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) V 2.2 m 3.3 Qg (typical) 16 nC ID (@TC (Bottom) = 25°C) 40 A Top View D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Low RDSon (<2.2m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Base part number Package Type IRFHM4226TRPbF PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM4226TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 28 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 105 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 67 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.7 PD @TC(Bottom) = 25°C Power Dissipation 39 TJ Operating Junction and TSTG Storage Temperature Range Linear Derating Factor A 40 420 0.021 -55 to + 150 W W/°C °C Notes through are on page 8 1 www.irf.com © 2013 International Rectifier August 07, 2013 IRFHM4226TRPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS BVDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 136 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 1.7 2.6 1.6 -5.7 ––– ––– ––– ––– 32 16 3.6 2.0 5.8 4.6 7.8 15 1.1 11 35 14 8.1 2000 570 150 Avalanche Characteristics Max. ––– ––– 2.2 3.3 2.1 ––– 1.0 100 -100 ––– ––– 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 30A m VGS = 4.5V, ID = 30A V VDS = VGS, ID = 50µA mV/°C µA VDS = 20V, VGS = 0V VGS = 20V nA VGS = -20V S VDS = 10V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A VDS = 13V VGS = 4.5V ID = 30A nC nC VDS = 16V, VGS = 0V ns VDD = 13V, VGS = 4.5V ID = 30A RG=1.8 pF VGS = 0V VDS = 13V ƒ = 1.0MHz EAS Parameter Single Pulse Avalanche Energy Typ. ––– Max. 124 Units mJ IAR Avalanche Current ––– 30 A Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Thermal Resistance Min. Typ. Max. ––– ––– 40 Units D A ––– ––– 500 ––– ––– ––– ––– 16 28 1.0 24 42 G S V ns nC Parameter Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 30A, VDD = 13V di/dt = 450A/µs RJC (Bottom) Junction-to-Case Typ. ––– RJC (Top) Junction-to-Case ––– 35 RJA Junction-to-Ambient ––– 47 RJA (<10s) Junction-to-Ambient ––– 30 2 www.irf.com © 2013 International Rectifier Max. 3.2 Units °C/W August 07, 2013 IRFHM4226TRPbF 1000 1000 VGS 10V 5.5V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 2.75V BOTTOM 2.75V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 100 TJ = 150°C 10 TJ = 25°C 1 VDS = 10V 60µs PULSE WIDTH ID = 30A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 7.0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = Cgd VGS, Gate-to-Source Voltage (V) ID= 30A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 12.0 VDS= 20V 10.0 VDS= 13V VDS= 5.0V 8.0 6.0 4.0 2.0 0.0 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.5V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V www.irf.com © 2013 International Rectifier 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage August 07, 2013 IRFHM4226TRPbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 10msec 10 Limited by Package 1msec 1 0.1 VGS = 0V DC Tc = 25°C Tj = 150°C Single Pulse 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.8 VSD, Source-to-Drain Voltage (V) 10 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.8 VGS(th), Gate threshold Voltage (V) 120 Limited by package 100 ID, Drain Current (A) 1 VDS , Drain-to-Source Voltage (V) 80 60 40 20 2.4 2.0 1.6 1.2 ID = 50µA ID = 250µA ID = 1.0mA ID = 10mA 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier August 07, 2013 IRFHM4226TRPbF 8.0 600 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) ID = 30A 6.0 TJ = 125°C 4.0 2.0 TJ = 25°C 0.0 ID 5.1A 7.2A BOTTOM 30A TOP 500 400 300 200 100 0 2 4 6 8 10 12 14 16 18 20 25 75 100 125 150 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On– Resistance vs. Gate Voltage 50 Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier August 07, 2013 IRFHM4226TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Switching Time Test Circuit I AS Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform August 07, 2013 IRFHM4226TRPbF PQFN 3.3 x 3.3 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier August 07, 2013 IRFHM4226TRPbF PQFN 3.3 x 3.3 Tape and Reel Note: 1. Dimension measured on the bottomof the cavity. 2. Pitch tolerance over any 10 pitches = ±0.008 [0.2] 3. ESDRequirement: 0±200volts 4. Surface Resistivity = 10 to 10 ohms per square inch 5. Roll should contain splice-free material 6. Engrave RESY symbol every 100 sprockets (about 15.75 [400] PS ( conformsupplier specification) camber The camber shall not exceed in 1mm/250 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† MSL1 (per JEDEC J-STD-020D††) PQFN 3.3mm x 3.3mm Moisture Sensitivity Level Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.275mH, RG = 50, IAS = 30A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 40A by source bonding technology. Pulse drain current is limited by source bonding technology. Revision History Date 08/07/13 Comments Added "FastIRFET™" above part number on page1 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier August 07, 2013