Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 ìA , IE = 0 40 V Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 V Emitter-base Breakdown voltage VEBO IE = 100 ìA , IC = 0 5 V Collector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 A Collector-emitter cut-off current ICEO VCE = 20 V , IB = 0 0.1 A Emitter-base cut-off current IEBO VEB = 5 V , IC = 0 0.1 A DC current gain hFE VCE = 1 V , IC = 100 mA 120 VCE = 1 V , IC = 800 mA 40 400 Collector-emitter saturation voltage VCE(sat) IC = 800 mA , IB = 80 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC = 800 mA , IB = 80 mA 1.2 V Transition frequency fT VCE = 10 V , IC = 50 mA , f = 30 MHz 100 MHz hFE Classification Y1 Marking Rank L H J hFE 120 200 200 350 300 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Transistor T SMD Type Product specification KST8050 Typical Characteristics Fig.1 Static Characteristic Fig.3 Base Emitter ON Voltage Fig.5 Current Gain Bandwidth Product http://www.twtysemi.com [email protected] Fig.2 DC Current Gain Fig.4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.6 Colletor Output Capacitance 4008-318-123 2 of 2