MBRH20045 thru MBRH200100R
Silicon Power
Schottky Diode
VRRM = 20 V - 100 V
IF = 200 A
Features
• High Surge Capability
• Types up to 100 V VRRM
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Symbol
Conditions
MBRH20045 (R) MBRH20060 (R) MBRH20080 (R) MBRH200100 (R)
Unit
VRRM
45
60
80
100
V
VRMS
32
42
56
70
V
VDC
45
60
80
100
V
Continuous forward current
IF
TC ≤ 136 °C
200
200
200
200
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
3000
3000
3000
3000
A
Operating temperature
Storage temperature
Tj
Tstg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Diode forward voltage
VF
Reverse current
IR
IF = 200 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
Parameter
MBRH20045 (R) MBRH20060 (R) MBRH20080 (R) MBRH200100 (R)
0.65
5
250
0.75
5
250
0.84
5
250
0.84
5
250
0.8
0.8
0.8
0.8
Unit
V
mA
Thermal characteristics
Thermal resistance, junction
- case
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RthJC
1
°C/W
MBRH20045 thru MBRH200100R
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2