MBRT20045 thru MBRT200100R
Silicon Power
Schottky Diode
VRRM = 20 V - 100 V
IF = 200 A
Features
• High Surge Capability
• Types up to 100 V VRRM
Three Tower Package
• Isolation Type Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit
Parameter
Symbol
Repetitive
p
p
peak reverse voltage
g
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
VDC
100
V
45
60
80
Continuous forward current
IF
TC ≤ 125 °C
200
200
200
200
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
1500
1500
1500
1500
A
Operating temperature
Storage temperature
Tj
Tstg
-40 to 150
-40 to 175
-40 to 150
-40 to 175
-40 to 150
-40 to 175
-40 to 150
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Diode forward voltage
VF
Reverse current
IR
IF = 100 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
Parameter
MBRT20045 (R) MBRT20060(R) MBRT20080 (R) MBRT200100 (R) Unit
0.75
1
20
0.8
1
20
0.88
1
20
0.88
1
20
0.18
0.18
0.18
0.18
V
mA
Thermal characteristics
Thermal resistance, junction case
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RthJC
1
°C/W
MBRT20045 thru MBRT200100R
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2