SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 30 V Gate–source voltage VGSS ± 12 V Drain current DC ID (Note 1) 4.0 Pulse IDP (Note 1) 8.0 PD (Note 2) 700 Drain power dissipation t = 10s A mW 1250 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ― absolute maximum ratings. TOSHIBA 2-3S1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 10 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The Junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristics Drain–source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = –12 V 18 ⎯ ⎯ V Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Vth ⏐Yfs⏐ RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V VDS = 3 V, ID = 2 A (Note3) 3.8 7.7 ⎯ S ID = 3.0 A, VGS = 10V (Note3) ⎯ 42 53 ID = 2.0 A, VGS = 4.5 V (Note3) ⎯ 51 65 ID = 1.0 A, VGS = 2.5 V (Note3) ⎯ 64 87 ID = 0.5 A, VGS = 1.8 V (Note3) ⎯ 81 131 ⎯ 270 ⎯ ⎯ 56 ⎯ ⎯ 47 ⎯ ⎯ 4.3 ⎯ ⎯ 2.8 ⎯ ⎯ 1.5 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 15 V, IDS= 3.0 A VGS = 4 V Turn-on time ton VDD = 10 V, ID = 2 A, ⎯ 20 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 31 ⎯ ⎯ – 0.9 – 1.2 Drain–source forward voltage VDSF ID = − 4.0 A, VGS = 0 V (Note3) mΩ pF nC ns V Note3: Pulse test 1 2008-10-20 SSM3K316T Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 4.7 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KDW 1 2 1 2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below 1 mA for the SSM3K316T). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-10-20 SSM3K316T ID – VDS ID – VGS 5 (A) 4 3 2 VGS = 1.5 V 1 0.1 0 0.2 0.4 − 25 °C 0.8 0.6 VDS 0.0001 0 1 (V) 1.0 Gate–source voltage RDS (ON) – VGS 200 Drain–source ON-resistance RDS (ON) (mΩ) 100 Ta = 100 °C 25 °C − 25 °C 2 6 4 Gate–source voltage (V) Ta = 25°C 150 0 VGS Common Source Common Source 50 2.0 RDS (ON) – ID 200 ID = 0.5 A Drain–source ON-resistance RDS (ON) (mΩ) 25 °C 0.001 Drain–source voltage 0 Ta = 100 °C 0.01 1 0 Common Source VDS = 3 V ID 1.8 V Drain current Drain current 10 Common Source Ta = 25°C 4.5 V 2.5 V ID (A) 10 V 8 VGS 150 100 2.5 V 4.5 V 50 VVGS 10 VV GS == 10 0 10 1.8 V 0 1 (V) 3 2 Drain current RDS (ON) – Ta 4 ID 5 (A) Vth – Ta 1.0 300 Vth (V) 250 200 150 0.5 A / 1.8 V 1.0 A / 2.5 V 100 ID = 2.0 A / VGS = 4.5 V 50 0 −50 Gate threshold voltage Drain–source on-resistance RDS (ON) (mΩ) Common Source 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V 0 −50 150 (°C) ID = 1 mA 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-10-20 SSM3K316T IDR – VDS |Yfs| – ID 10 1 0.3 Common Source VDS = 3 V Ta = 25°C 0.1 0.01 1 0.1 Drain current ID 10 1 S 0.1 Ta =100 °C 25 °C 0.01 −25 °C –0.2 (A) –0.4 Drain–source voltage –0.6 –0.8 VDS (ns) 100 tf t Ciss Switching time 100 50 Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V 30 10 0.1 10 (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25°C RG = 4.7 Ω toff 300 –1.0 t – ID 1000 C (pF) IDR G 500 Capacitance D Ta = 25°C 0.001 0 C – VDS 1000 Common Source VGS = 0 V (A) IDR 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) 10 ton tr 1 10 Drain–source voltage 1 0.01 100 VDS (V) 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 ID = 3 A Ta = 25°C 8 Gate–Source voltage VGS (V) Common Source 6 VDD=15V VDD=24V 4 2 0 0 4 Total Gate Charge 8 Qg 12 (nC) 4 2008-10-20 SSM3K316T rth – tw PD – Ta Drain power dissipation PD (mW) Transient thermal impedance rth (°C/W) 1000 b 100 a 10 1 0.001 Single Pulse a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.8 mm2×3) 0.01 0.1 1 Pulse width 10 tw 100 1000 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.8 mm ×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2008-10-20 SSM3K316T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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