SEMIWELL STR4A80

STR4A80
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
◆ Repetitive Peak Off-State Voltage : 800V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
○
◆ High Commutation dv/dt
1.T1
3.Gate
○
TO-126
General Description
This device is new surface mounted package line up suitable
for space limited application such as low power AC switching
applications, such as fan speed, small light controllers and
home appliance equipment.
3
2
1
Absolute Maximum Ratings
Symbol
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz, Gate open
800
V
IT(RMS)
R.M.S On-State Current
TC = 95 °C, Full Sine wave
4.0
A
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
30/33
A
I2t for Fusing
tp = 10ms
4.5
A 2s
Peak Gate Power Dissipation
TC = 95 °C, Pulse width ≤ 1.0us
3
W
Average Gate Power Dissipation
Over any 20ms period
0.3
W
IGM
Peak Gate Current
tp = 20us, TJ=125°C
1.0
A
VGM
Peak Gate Voltage
tp = 20us, TJ=125°C
7.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
0.26
g
I2 t
PGM
PG(AV)
TJ
TSTG
Mass
Mar, 2008. Rev. 5
1/6
[email protected] Semiconductor Co., Ltd., All rights reserved.
STR4A80
Electrical Characteristics
Symbol
Items
Conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
1.0
mA
VTM
Peak On-State Voltage
IT = 5.5A, Inst. Measurement
─
─
1.65
V
─
─
20
─
─
20
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
20
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -2.0 A/ms,
VD=2/3 VDRM
5.0
─
─
V/㎲
─
5.0
─
mA
─
─
3.5
°C/W
Holding Current
Thermal Impedance
Junction to case
※Notes :
1. Pulse Width ≤ 300us , Duty cycle ≤ 2%
2/6
Ratings
STR4A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
VGM (7V)
PG(AV) (0.3W)
25 ℃
0
10
IGM (1A)
Gate Voltage [V]
PGM (3W)
On-State Current [A]
1
10
1
10
o
125 C
0
10
o
25 C
VGD(0.2V)
-1
-1
10
10
1
2
10
3
10
10
0.5
1.0
1.5
2.0
3.0
3.5
4.0
4.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
6.0
130
π
5.0
θ
2π
θ
4.5
4.0
360°
3.5
θ : Conduction Angle
3.0
2.5
o
= 180
o
= 150
o
= 120
o
= 90
θ = 60
o
θ = 30
o
Allowable Case Temperature [ oC]
θ
θ
θ
θ
5.5
Power Dissipation [W]
2.5
On-State Voltage [V]
Gate Current [mA]
2.0
1.5
1.0
125
120
θ
θ
θ
θ
θ
θ
115
θ
π
110
2π
θ
105
360°
o
= 30
o
= 60 o
= 90 o
= 120 o
= 150 o
= 180
θ : Conduction Angle
100
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
95
0.0
5.0
0.5
1.0
1.5
RMS On-State Current [A]
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
35
V
15
o
20
50Hz
V
o
VGT (t C)
60Hz
25
VGT (25 C)
Surge On-State Current [A]
30
V
1
+
GT1
_
GT1
_
GT3
10
5
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
STR4A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
I
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
I
1
I
0.1
-50
0
50
+
GT1
_
GT1
_
GT3
100
150
1
-2
10
-1
0
10
o
1
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/6
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
2
10
STR4A80
TO-126 Package Dimension
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
Max.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
H
0.047
0.059
2.3
I
0.091
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
φ
3.2
0.126
D
A
E
B
φ
G
F
L
3
2
C
1. Gate
2. T2
3. T1
1
J
K
H
I
5/6
STR4A80
TO-126 Package Dimension, Forming
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
H
0.047
0.059
2.3
I
0.091
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
M
5.0
0.197
φ
3.2
0.126
A
D
E
B
φ
L
G
F
3
2
C
1. Gate
2. T2
3. T1
1
M
J
H
I
6/6
Max.
K