Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 ìA , IE = 0 40 V Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 V 5 Emitter-base Breakdown voltage VEBO IE = 100 ìA , IC = 0 Collector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 A Collector-emitter cut-off current ICEO VCE = 20 V , IB = 0 0.1 A Emitter-base cut-off current IEBO VEB = 5 V , IC = 0 0.1 A DC current gain hFE VCE = 1 V , IC = 50 mA 120 VCE = 1 V , IC = 500 mA 50 V 350 Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB = 50 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB = 50 mA 1.2 V Transition frequency fT VCE = 6 V , IC = 20 mA , f = 30 MHz 150 MHz hFE Classification J3Y Marking Rank L H hFE 120 200 200 350 www.kexin.com.cn 1 Transistors SMD Type KST8050S Typical Characteristics Fig.1 Static Characteristic Fig.3 Base-Emitter Saturation Voltage Callector-Emitter Saturation Voltage 2 www.kexin.com.cn Fig.2 DC Current Gain Fig.4 Current Gain Bandwidth Product