XBS013R1DR-G ETR1617-005 Schottky Barrier Diode, 100mA, 30V Type ■APPLICATIONS ■FEATURES ●Low Current Rectification Ultra Small Package Low IR ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARMETER SYMBOL RATINGS UNITS VRM 30 V Repetitive Peak Voltage Reverse Voltage (DC) Forward Current (Average) Peak Forward Surge Current VR 30 V IF(AV) 100 mA *1 Junction Temperature Storage Temperature Range IFSM 0.5 A Tj 150 ℃ Tstg -40∼+150 ℃ 0.30±0.05 0.20±0.03 *1) 60Hz Half sine wave, 1 cycle, Non-Repetitive. ■MARKING RULE TOP BOTTOM ①：2 (Product Number) ① a,b,c,d,e：Lot Number Unit: mm ■PRODUCT NAME PRODUCT NAME PACKAGE * USP-2B01 XBS013R1DR-G * * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Forward Voltage VF1 Reverse Current IR Ta=25℃ LIMITS UNITS MIN. TYP. MAX. IF=10mA - - 0.46 V VR=10V - - 0.3 μA ●NOTES ON USE 1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. for the electrodes is weak due to its structure. Compare to other packages, fixation strength Please keep away from mechanical stress to the product when mounting or after mounting. 2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board deformation and mechanical stress. 1/3 XBS013R1DR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage 100 Ta=125℃ Reverse Current IR (uA) Forward Current IF (mA) 100 75℃ 10 25℃ 1 Ta=125℃ 10 100℃ 1 75℃ 0.1 25℃ -25℃ 0.01 0.1 0.0 0.2 0.4 0.6 0 0.8 10 20 30 Reverse Voltage VR (V) Forward Voltage VF (V) (3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature 0.6 100 Reverse Current IR (uA) Forward Voltage VF (V) VR=20V 0.4 IF=10mA 0.2 1mA 0.0 10 10V 1 0.1 0.01 -50 0 50 100 150 0 Operating Temperature Ta (℃) 150 (6) Average Forward Current vs. Operating Temperature 0.2 Average Forward Current IFAV (A) 25 Inter-Terminal Capacity Ct (pF) 100 Operating Temperature Ta (℃) (5) Inter-Terminal Capacity vs. Reverse Voltage 20 15 10 5 Ta=25℃ 0 0.1 0.0 0 10 20 Reverse Voltage VR (V) 2/3 50 30 0 50 100 Operating Temperature Ta (℃) 150 XBS013R1DR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 3/3