ONSEMI MBRA130LT3G

MBRA130LT3G,
NRVBA130LT3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
Features







Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Low Forward Voltage Drop
AEC−Q101 Qualified and PPAP Capable
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
B1L3
AYWWG
Mechanical Characteristics:








Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or
Polarity Band
Device Meets MSL1 Requirements
ESD Ratings:
 Machine Model = C (> 400 V)
 Human Body Model = 3B (> 8000 V)
B1L3
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA130LT3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
NRVBA130LT3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
Device
** 12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
Publication Order Number:
MBRA130LT3/D
MBRA130LT3G, NRVBA130LT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 105C)
Symbol
Value
Unit
VRRM
VRWM
VR
30
V
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 105C)
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to +150
TJ
−55 to +125
C
dv/dt
10,000
V/ms
Operating Junction Temperature
Voltage Rate of Change, (Rated VR, TJ = 25C)
2.0
25
A
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJL
RqJA
35
86
C/W
1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
VF
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 1.0 A) see Figure 2
(IF = 2.0 A)
IR
Maximum Instantaneous Reverse Current
(VR = 30 V) see Figure 4
(VR = 15 V)
2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2.0%.
http://onsemi.com
2
Value
Unit
TJ = 25C
TJ = 100C
0.41
0.47
0.35
0.43
TJ = 25C
TJ = 100C
1.0
0.4
25
12
Volts
mA
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRA130LT3G, NRVBA130LT3G
10
TJ = 125C
1.0
TJ = 85C
TJ = 25C
TJ = -40C
0.1
0
0.2
0.4
0.6
0.8
1.0
TJ = 125C
1.0
TJ = 85C
TJ = 25C
0.1
0
0.2
0.4
0.6
0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0
100E-3
I R , MAXIMUM REVERSE CURRENT (AMPS)
100E-3
I R , REVERSE CURRENT (AMPS)
10
10E-3
TJ = 125C
1.0E-3
TJ = 85C
100E-6
10E-3
1.0E-3
TJ = 85C
TJ = 25C
100E-6
10E-6
TJ = 25C
1.0E-6
0
10
20
30
10E-6
1.0E-6
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
http://onsemi.com
3
30
MBRA130LT3G, NRVBA130LT3G
1.8
dc
1.6
1.4
SQUARE WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
PFO , AVERAGE POWER DISSIPATION (WATTS)
FREQ = 20 kHz
20
40
60
80
100
120
0.6
dc
SQUARE WAVE
0.5
Ipk/Io = p
0.4
Ipk/Io = 5
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1.6
T, TIME (s)
1.0E+0
100E-3
10E-3
1.0E-3
100E-6
10E-6
1.0E-3
100E-6
10E-3
1.0E+0
100E-3
10E+0
T, TIME (s)
Figure 7. Thermal Response
1000
C, CAPACITANCE (pF)
IO , AVERAGE FORWARD CURRENT (AMPS)
2.0
TJ = 25C
100
10
1.0
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
http://onsemi.com
4
35
40
100E+0
1.0E+3
MBRA130LT3G, NRVBA130LT3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRA130LT3/D