BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 920 to 960 28 1.0 22.5 7.8 −48.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: Average output power = 1.0 W Gain = 22.5 dB Efficiency = 7.8 % ACPR = −48.5 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 [1] 2 3 3 2 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G10-45 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 13 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 12.5 W 1.7 K/W BLF6G10-45_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 2 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 72 mA 1.35 1.9 2.35 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 430 mA 1.7 2.15 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 12.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 3.6 A - 5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2.52 A - 0.2 - Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 1.0 W 21 22.5 23.9 dB RLin input return loss PL(AV) = 1.0 W 8 13 - dB ηD drain efficiency PL(AV) = 1.0 W 6.9 7.8 - % ACPR adjacent channel power ratio PL(AV) = 1.0 W - −48.5 −45.5 dBc 7.1 Ruggedness in class-AB operation The BLF6G10-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 35 W (CW); f = 960 MHz. BLF6G10-45_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 3 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 001aah527 25 75 ηD (%) Gp (dB) ηD 23 60 45 21 19 30 Gp 15 17 15 0 0 10 20 30 40 50 PL (W) VDS = 28 V; IDq = 350 mA; f = 960 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah528 25 ηD (%) Gp (dB) ηD 23 55 001aah529 0 70 IMD (dBc) IMD3 IMD5 −30 40 21 Gp 19 IMD7 25 −60 10 17 15 0 20 40 60 80 PL (PEP)(W) −5 −90 40 60 VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values BLF6G10-45_2 Product data sheet 20 PL(PEP) (W) VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig 2. 0 © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 4 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 001aah530 25 Gp (dB) 16 ηD (%) Gp 23 12 (1) (2) (1) 001aah531 −40 ACPR (dBc) −45 (1) (2) (2) 21 19 8 −50 4 −55 0 −60 ηD 17 20 24 28 32 36 PL(AV) (dBm) VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz. 20 24 (1) f = 955 MHz. (2) f = 925 MHz. (2) f = 925 MHz. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio, low frequency range as functions of average load power; typical values BLF6G10-45_2 Product data sheet 32 36 PL(AV) (dBm) VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz. (1) f = 955 MHz. Fig 4. 28 © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 5 of 11 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x NXP Semiconductors 8. Test information BLF6G10-45_2 Product data sheet VDD VGG C10 C9 C11 C12 C13 C14 C15 C16 R2 R1 Rev. 02 — 20 January 2010 F1 R3 input 50 Ω C8 C1 C7 C2 C3 C4 C6 output 50 Ω C5 001aah532 BLF6G10-45 Test circuit for operation at 900 MHz Power LDMOS transistor 6 of 11 © NXP B.V. 2010. All rights reserved. Fig 6. BLF6G10-45 NXP Semiconductors Power LDMOS transistor − + F1 R2 C16 C10 C12 C13 C9 C11 C15 R1 C1 C8 C14 C2 C3 C6 C7 C4 C5 001aah533 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 7. Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA Table 8. List of components (see Figure 6 and Figure 7). All capacitors should be soldered vertically. Component Description Value Remarks C1 multilayer ceramic chip capacitor 3.0 pF [1] C2 multilayer ceramic chip capacitor 1 pF [1] C3 multilayer ceramic chip capacitor 6.2 pF [1] C4 multilayer ceramic chip capacitor 2 pF [1] C5 multilayer ceramic chip capacitor 1.0 pF [1] C6 multilayer ceramic chip capacitor 6.8 pF [1] C7 multilayer ceramic chip capacitor 6.8 pF [1] C8, C11, C14 multilayer ceramic chip capacitor 68 pF [1] C9, C10, C12, C13 multilayer ceramic chip capacitor 330 nF; 50 V [2] C15 multilayer ceramic chip capacitor 4.5 μF; 50 V [2] C16 Electrolytic capacitor 220 μF F1 Ferrite SMD bead - Q3 BLF6G10-45 - R1 SMD resistor 4.7 Ω; 0.1 W R2 SMD resistor 6.8 Ω; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-45_2 Product data sheet Ferroxcube BDS 3/3/8.9-4S2 or equivalent © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 7 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H p U2 E1 w1 A E B 2 A w2 b C Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 inches D D1 E E1 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 F H p Q q U1 U2 w1 w2 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.45 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.130 0.067 0.805 0.390 0.600 0.010 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.115 0.057 0.795 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 02-02-11 09-08-26 SOT608A Fig 8. EUROPEAN PROJECTION Package outline SOT608A BLF6G10-45_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 8 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Waveform DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G10-45_2 20100120 Product data sheet - BLF6G10-45_1 Modifications BLF6G10-45_1 • • • • Section 1.1 “General description” lower frequency range extended to 700 MHz from 800 MHz. Section 1.2 “Features” lower frequency range extended to 700 MHz from 800 MHz. Section 1.3 “Applications” lower frequency range extended to 700 MHz from 800 MHz. Section 12 “Legal information” export control disclaimer added. 20090203 Product data sheet BLF6G10-45_2 Product data sheet - - © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 9 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G10-45_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 20 January 2010 10 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 January 2010 Document identifier: BLF6G10-45_2