2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) APPLICATIONS: Hermetically sealed surface mount 2N5551 for high reliability / space applications requiring small size and low weight devices. Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage 160V VEBO Emitter – Base Voltage IC Collector Current PD Total Device Dissipation 6V 600mA @ TA =25°C Derate >25°C TSTG , TJ Operating and Storage Temperature Range 350mW 0.2°C/mW –55 to +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6528 Issue 2 2N5551CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 1.0mA IB = 0mA 160 V V(BR)CBO Collector – Base Breakdown Voltage IC = 100μA IE = 0mA 180 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10μA IC = 0mA 6 V ICBO Collector – Base Cut-off Current VCB = 120V IE = 0 50 nA TA = +100°C 50 μA IEBO Emitter – Base Cut-off Current VEB = 4V IC = 0 50 nA VCE(sat) Collector – Emitter Saturation Voltage IC = 10mA IB = 1.0mA 0.15 IC = 50mA IB = 5mA 0.20 VBE(sat) Base – Emitter Saturation Voltage IC = 10mA IB = 1.0mA 1.0 IC = 50mA IB = 5mA 1.0 IC = 1.0mA VCE = 5V 80 IC = 10mA VCE = 5V 80 IC = 50mA VCE = 5V 30 IC = 10mA VCE = 10V hFE* Current Gain fT Current Gain Bandwidth Product Cobo Output Capacitance Cib Input Capacitance NF Noise Figure hFE* Current Gain f = 100MHz VCB = 10V 100 IE = 0 RS=1.0 k VCE = 10V f = 1.0 KHz IC =1.0 mA f = 1.0 KHz — 300 — 60 f = 1.0 MHz VCE = 5V 250 pF IC = 0 IC = 250μA V 6 f = 1.0 MHz VEB = 0.5V V 50 8 dB 200 — * Pulse Test: tp ≤ 300μs, δ ≤ 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6528 Issue 2