2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications Unit: mm DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Unit VCBO 100 V VCEX 80 50 VEBO 7 DC IC 3.0 Pulse ICP 5.0 IB 300 PC 1.0 Emitter-base voltage Base current Collector power dissipation Rating VCEO Collector-emitter voltage Collector current Symbol DC t = 10 s Junction temperature Storage temperature range (Note) V V A mA 2.5 JEDEC ― JEITA SC-62 W TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Tj 150 °C Tstg −55 to 150 °C Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 Base-emitter saturation voltage VBE (sat) DC current gain Collector output capacitance Rise time Switching time V IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF tr See Figure 1 circuit diagram. ⎯ 40 ⎯ VCC ∼ − 30 V, RL = 30 Ω ⎯ 500 ⎯ IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯ Storage time tstg Fall time tf 1 ns 2006-07-26 2SC5712 Marking VCC Part No. (or abbreviation code) IB1 Input IB1 RL 20 µs 2 Output IB2 IB2 Lot No. Duty cycle < 1% Figure 1 A A line indicates lead (Pb)-free package or lead (Pb)-free finish. Switching Time Test Circuit & Timing Chart 2 2006-07-26 2SC5712 IC – VCE 60 50 Common emitter Ta = 25°C Single nonrepetitive pulse hFE 70 3 hFE – IC 10000 40 30 DC current gain Collector current IC (A) 4 20 2 10 5 1 Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100°C 1000 25 −55 100 2 IB = 1 mA 0 0 0.2 0.4 0.6 Collector-emitter voltage 0.8 VCE 10 0.001 1 0.01 0.1 (V) VCE (sat) – IC VBE (sat) – IC 100 Common emitter β = 50 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1 25 0.1 Ta = 100°C −55 0.01 0.001 0.001 0.01 1 Collector current IC (A) 0.1 Common emitter IC/IB = 50 Single nonrepetitive pulse 10 25 1 Ta = 100°C 0.1 0.001 1 Collector current IC (A) −55 0.01 0.1 1 Collector current IC (A) VBE – IC 3 Common emitter Base-emitter voltage VBE (V) VCE = 2 V Single nonrepetitive pulse 2 Ta = 100°C 1 25 0 0 0.4 0.8 −55 1.2 1.6 Collector current IC (A) 3 2006-07-26 2SC5712 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 µs♦ 10 µs♦ IC max (continuous) 1 DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 Collector-emitter voltage VCEO max Collector current IC (A) 10 s♦* 100 ms♦* 10 VCE 100 (V) 4 2006-07-26 2SC5712 RESTRICTIONS ON PRODUCT USE 060116EAA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C 5 2006-07-26