High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SC4102 / 2SC3906K 2.0 1.3 0.9 (2) 0.65 0.65 (1) 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 °C °C (1) Emitter (2) Base (3) Collector 2SA1514K Packaging specifications and hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE R∗ T106 3000 R∗ T146 3000 0.95 0.95 1.9 2.9 2.8 0.3Min. 1.1 2SA1514K SMT3 RS 0.8 2SA1579 UMT3 RS 0 to 0.1 Package hFE 1.6 0.15 Type (2) (3) 0.4 (1) Junction temperature Storage temperature 2.1 0.2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 1.25 Unit V V V mA W Limits −120 −120 −5 −50 0.2 150 −55 to +150 0~0.1 Symbol VCBO VCEO VEBO IC PC Tj Tstg 0.15 Parameter (3) 0.3 Absolute maximum ratings (Ta=25C) 0.7 2SA1579 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −120 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −120 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA ICBO − − −0.5 μA VCB= −100V Collector cutoff current IEBO − − −0.5 μA VEB= −4V VCE(sat) − − −0.5 V IC/IB= −10mA/−1mA VCE= −6V, IC= −2mA Emitter cutoff current Collector-emitter saturation voltage Conditions hFE 180 − 560 − Transition frequency fT − 140 − MHz Output capacitance Cob − 3.2 − pF DC current transfer ratio www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/2 VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz 2012.01 - Rev.B 2SA1579 / 2SA1514K Data Sheet Electrical characteristics curves −50 −20.0 −17.5 −6 −15.0 −12.5 −4 −10.0 −7.5 −5.0 −2 −2.5μA IB=0 −4 0 −8 −12 −16 −20 −10 −5 −2 −1 −0.5 TRANSITION FREQUENCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=50/1 20/1 10/1 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib (pF) 20 −0.2 −0.4 0 −0.6 −0.8 −1.0 −1.2 −1.4 100 −0.2 −1.6 Fig.2 Ground emitter propagation characteristics Ta=25°C −0.1 200 Ta=25°C VCE= −6V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) Fig.5 Transition frequency vs. emitter current 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics −0.2 −5V VCE= −1V 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −0.5 500 −0.2 −0.1 −20 DC CURRENT GAIN : hFE −22.5 −8 Ta=25°C Ta=25°C VCE= −6V V COLLECTOR CURRENT : IC (mA) −25.0 Fig.3 DC current gain vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C −3 COLLECTOR CURRENT : IC (mA) −10 20 Ta=25°C f=1MHZ IE=0A 10 Cob 5 2 1 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage Ta=25°C f=1MHZ IC=0A Cib 10 5 2 1 −0.5 −1 −2 −5 −10 −20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2012 ROHM Co., Ltd. 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