C945 TRANSISTOR (NPN) SOT-23 FEATURE z z z Excellent hFE Linearity Low noise Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR· MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICER VCE=55V,R=10MΩ 0.1 uA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA hFE(1) VCE=6 V , IC=1mA 130 hFE(2) VCE=6 V , IC=0.1mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT Collector output capacitance Cob Noise figure NF CLASSIFICATION OF hFE(1) Rank Range VCE=6V,IC=10mA,f =30 MHz 150 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ 4 L H 130-200 200-400 3.0 pF 10 dB １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ C945 Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５