ROHM BD91411GW

BD91411GW
Datasheet
Built-in OVP Micro USB Switch
with USB2.0, MHLTM and Audio
BD91411GW
●General Description
BD91411GW is USB connector interface IC.
It is possible to use it for the application for the mobile
device such as smart phones and mobile phones.
●Key Specifications
OVP switch ON resistance:
120mΩ(Typ.)
Over Current Protection(OCP):
2.0A(Min.)
Regulator output voltage:
3.3V or 4.9V
MHL/USB switch ON resistance:
5Ω(Typ.)
MHL/USB switch ON capacitance:
6pF(Typ.)
VBAT standby current:
6µA (Typ.)
Operating temperature range:
-30℃ to +85℃
●Features
Complete solution for mini/micro USB connect
multiplexing.
MHL/USB/UART 2paths, AUDIO 1path, Monaural
Microphone 1path in 4 to 1 multiplexer.
Compatible with USB High Speed/Full Speed.
CECBUS to ID bypass switch.
Audio switch handle with negative voltage signal.
Microphone signal paths to VBUS or HDPR are built
in.
ID resistance support to CEA936A, Battery Charging
Specification (BCS) ver1.2, MCPC, USB-OTG and
MHL specification.
Power-On Reset.
USB Charger detection support with BCS ver1.2
specification.
Over voltage protection (OVP) up to 28V about
VB(VBUS) input and VC(cradle) input.
Power multiplexer OVP input about VB and VC.
Internal Low Ron FET about OVP(VB and VC).
OTG power path switch (Output side in this power
path support 28V protection) is built in.
VBUS linked LDO（4.9V or 3.3V are selectable.）
I2C compatible Interface.
●Applications
Mobile-Phones・Smart-Phones
Tablet-PC
Digital still camera（DSC）
●Package
UCSP75M3
●Typical Application Circuit
UCSP75M3
to Charger
CAP_VC
VOUT
Ccapvc
Internal Power for OTG
CRADLE
VC
CAP_VB
OTG_VIN
MICOUT
VB
HDM1
HDM2
EARL
HDP1
HDP2
EARR
VBUS
HDML
D-
HDPR
D+
ID
ID
to MHL TX/USB TRX
CBUS
to Charger
Internal Power for SYSTEM IO
+
Rpu
VCCIN
Battery
Cvccin
to USB Transceiver
GND
Cvbref
LDOSEL
DCDMODE
USBDISEN
VBREG
IDSEL
DSS
SCL
SDA
RST
INTB
VCDET
VBDET
OTG_DET
CHG_DET
FACT_DET
GND
VBAT
VDDIO
to Host
to Host
from System Reset
to Host
to Host
to Host
to Host
to Host
to Host
USB
Receptacle
Ccapvb
to MIC Amplifier
from MHL TXto USB PHY
from HP Amplifier
from MHL TXto USB PHY
from HP Amplifier
W(Typ.) x D(Typ.) x H(Max.)
3.00mm x 3.00mm x 0.85mm
Fig.1 Typical Application Circuit
○Product structure：Silicon monolithic integrated circuit
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Datasheet
BD91411GW
◆ Contents
1.Pin Configuration .........................................................................................................................................................................3
2.Pin Description.............................................................................................................................................................................3
3.Block Diagram .............................................................................................................................................................................4
4.Absolute Maximum Ratings .........................................................................................................................................................5
5.Recommended Operating Ratings...............................................................................................................................................5
6.Electrical Characteristic ...............................................................................................................................................................6
7. Features....................................................................................................................................................................................10
7-1.Pull down resistance detection in ID pin..............................................................................................................................10
7-1-1. Priorty of MHLSW and ID detection.............................................................................................................................10
7-1-2. Application with SEND/END switch.detection..............................................................................................................10
7-1-2-1. OTG Application Detection ...................................................................................................................................10
7-1-2-2. MHL Application Detection....................................................................................................................................10
7-1-3. Enable for ID pin pull down resistance detection.........................................................................................................10
7-1-4. Retry of ID detection sequence. ..................................................................................................................................10
7-1-5. Polling mode of ID detection sequence. ......................................................................................................................10
7-1-6. Remove ID pin pull down resistance. (Application detachment)..................................................................................10
7-2. USB port detection. ............................................................................................................................................................10
7-2-1. Data Contact Detect/DCD ...........................................................................................................................................10
7-2-2. Configuration of DCD time out.....................................................................................................................................10
7-2-3. Primary Detection........................................................................................................................................................10
7-2-4. Secondary Detection ...................................................................................................................................................10
7-2-5. Shortening of second detection by Enumeration preparation ...................................................................................... 11
7-2-6. Sequence Retrying...................................................................................................................................................... 11
7-2-7. Deactivation of USB por tdetection by Extarnal PIN and Internal Register. ................................................................. 11
7-3. Signal paths ....................................................................................................................................................................... 11
7-3-1. HDPR/HDML Signal paths .......................................................................................................................................... 11
7-3-2. Configuration of MUXSW initial path by DSS PIN. ...................................................................................................... 11
7-3-3. Pull-down resistance in EARR/RARL pin. ................................................................................................................... 11
7-3-4. Signal path between ID pin and CBUS pin. ................................................................................................................. 11
7-4. Interrupt report with INTB pin. ............................................................................................................................................ 11
7-4-1. Active level selector of INTB........................................................................................................................................ 11
7-4-2. Interrupt polarity........................................................................................................................................................... 11
7-5. Detection of Cradle and VBUS by VBDET pin and VCDET pin.......................................................................................... 11
7-6. Detection of Cradle and VBUS by I2C interface reading.................................................................................................... 11
7-7. Detection of Over current state by I2C Interface reading. .................................................................................................. 11
7-8. Thermal Shut down. ........................................................................................................................................................... 11
7-9. VBREG Regulator. ............................................................................................................................................................. 11
7-10. OTG mode control............................................................................................................................................................12
7-11. VBUS signal path. ............................................................................................................................................................12
7-12. Reset syetems .................................................................................................................................................................12
7-12-1. Power-On Reset........................................................................................................................................................12
7-12-2. Hardware Reset with RST. ........................................................................................................................................12
7-12-3. Software reset from I2C Interface writing. .................................................................................................................12
7-13. I2C Interface electrical characteristics. .............................................................................................................................12
7-14. I2C Bus Interface ..............................................................................................................................................................13
7-14-1. START and STOP Conditions ...................................................................................................................................13
7-14-2. Modifiynig Data..........................................................................................................................................................13
7-14-3. Acknowledge .............................................................................................................................................................14
7-14-4. Device Address .........................................................................................................................................................14
7-14-5. Write operaton...........................................................................................................................................................15
7-14-6. Address roll back specification. .................................................................................................................................15
7-14-7. Read back operation. ................................................................................................................................................15
8.Typical Performance Curves......................................................................................................................................................16
9.Application Circuit Diagram........................................................................................................................................................17
10.I/O equivalence circuits............................................................................................................................................................18
11.Operational Notes ....................................................................................................................................................................22
12.Ordering Information ................................................................................................................................................................23
13.Physical Dimension Tape and Reel Information.......................................................................................................................23
14.Marking Diagram .....................................................................................................................................................................23
15.Revision History.......................................................................................................................................................................24
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Datasheet
BD91411GW
1.Pin Configuration
G TMODE1
HDM1
HDP1
EARL
EARR
ID
TMODE0
F
HDML
HDM2
HDP2
FACT_DET
CBUS
VCCIN
VDDIO
E
HDPR
MICOUT
DSS
RST
SCL
SDA
VBAT
D
GND
LDOSEL
INTB
GND
C
VBREG
OTG_DET
(INDEX)
VBDET
VCDET
IDSEL
VC
B OTG_VIN
VB
CAP_VB
VOUT
VOUT
VC
VC
A
VB
2
VB
VOUT
VOUT
CAP_VC
ATEST1
3
4
5
6
7
ATEST0
1
CHG_DET USBDISEN DCDMODE
Fig.2 Pin configuration
(BOTTOM VIEW)
2.Pin Description
No.
BALL No.
BALL NAME
I/O
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
B6,B7,C7
A2,A3,B2
E7
F7
F6
D1,D7
A4,A5,B4,B5
B1
E3
A6
B3
C5
C4
C2
F4
F5
C1
D2
E2
G3
G2
F3
F2
G5
G4
VC
VB
VBAT
VDDIO
VCCIN
GND
VOUT
OTG_VIN
DSS
CAP_VC
CAP_VB
VCDET
VBDET
OTG_DET
FACT_DET
CBUS
VBREG
LDOSEL
MICOUT
HDP1
HDM1
HDP2
HDM2
EARR
EARL
I
I
I
I
O
GND
O
I
I
O
O
O
O
O
O
I/O
O
I
O
I/O
I/O
I/O
I/O
I
I
26
E1
HDPR
I/O
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
F1
D3
G6
E5
E6
D6
E4
D4
G7
G1
A1
A7
D5
C6
C3
HDML
CHG_DET
ID
SCL
SDA
INTB
RST
USBDISEN
TMODE0
TMODE1
ATEST0
ATEST1
DCDMODE
IDSEL
INDEX
I/O
O
I/O
I
I/O
O
I
I
I
I
I/O
I/O
I
I
-
Function
pull down
Power supply about Cradle input
Power supply about USB VBUS input
Power supply about Battery Voltage
Power supply for I2C I/F
Power supply for internal circuit
GND
OVP output
OTG Power Input
MUXSW Initial Value Select Signal.
CAP connect pin for SW1 OVP
CAP connect pin for SW2 OVP
VC detecting (UVLO < VC < OVLO )
VB detecting (UVLO < VB < OVLO )
OTG Mode Detection
Factory Mode Detection
CBUS Signal Path
Regulator with VBUS Output
Regulator output voltage select.
MIC signal Output.
MHL/USB/UART D+ Signal path1
MHL/USB/UART D- Signal path1
MHL/USB/UART D+ Signal path2
MHL/USB/UART D- Signal path2
500Ω *1
Headphone Right signal path
500Ω *1
Headphone Left signal path
MHL/USB/UART/Earphone/MIC
Signal Path
MHL/USB/UART/Earphone Signal Path
USB Charging port detection
ID pull down resistance connecting pin
I2C Clock signal input
I2C Data signal input
Interrupt signal output
Reset signal input
USB Port detection disable.
TEST Pin(for Vendor TEST)
1MΩ
1MΩ
TEST Pin(for Vendor TEST)
TEST Pin(for Vendor TEST)
TEST Pin(for Vendor TEST)
DCD Time out select.
I2C Device address select
Index mark
Pins configuration
when not in use
open or GND
open or GND
open or GND
open or GND
open
GND
open
open or GND
GND
open
open
open
open
open
open
open
open
GND
open
open
open
open
open
open
open
open
open
open
open
GND
GND
open
GND
GND
open or GND
open or GND
Open
Open
GND
GND
open
*1 Turn on and turn off can be controlled by Register.
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Datasheet
BD91411GW
3.Block Diagram
VOUT
CAP_VC
VOUT
SW1
VC
VOUT
VOUT
VC
ILMT
VCDET
VC
VCDET
to SW, MAIN
CONTROL
ATEST0
VCSW
CAP_VB
TSD
SW2
VBDET
VB
VB
ILMT
VB
VBDET
to SW, MAIN
CONTROL
ATEST1
VBSW
VBREG
VBREG
LDOSEL
OTGSW
OTG_VIN
SW4
MICOUT
SW5
MICSW
MUXSW
HDM1
HDM2
EARL
HDML
HDP1
HDP2
HDPR
EARR
VOUT
VB
VC
VBAT
OTG_DET
VB
VCCIN
CHG_DET
to
MAIN
CONTROL
to
ID Detection
MAIN
CONTROL
USB
Port
Detection
ID
CBUS_SW
MICSW（SW4）
VBSW（SW2）
VCCIN
VCSW（SW1）
VBSW（SW2）
VCSW（SW1）
MICSW（SW4,5）
MUXSW
USBCHGDET
IDDET
VDDIO
VBREG
CBUS_SW
CBUS
GND
VCCIN
GND
SCL
SDA
RST
INTB
IDSEL
DSS
SW
CONTROL
MAIN
CONTROL
FACT_DET
TMODE0
DCDMODE
TMODE1
USBDISEN
Fig.3 Block Diagram
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Datasheet
BD91411GW
4.Absolute Maximum Ratings (Ta=25°C)
Item
Symbol
Rating
Unit
VIN1
-0.3～30
V
VIN2
-0.3～6.0
V
VIN3
-0.3～4.5
V
VIN4
-1.0～7.0
V
VIN5
-1.0～7.0
V
VIN6
-1.5～7.0
V
VIN7
-1.5～7.0
V
VIN8
-0.3～7.0
V
VIN9
-0.3～6.0
V
Pd
1346 (*1)
mW
Operating Temperature Range
Topr
-30 ～ +85
℃
Storage Temperature Range
Tstg
-55 ～ +125
℃
Maximum Supply Voltage1
(VB, VC)
Maximum Supply Voltage2
(VBAT)
Maximum Supply Voltage3
(VDDIO)
Maximum Supply Voltage4
(HDP1, HDM1,)
Maximum Supply Voltage5
(HDP2, HDM2)
Maximum Supply Voltage6
(EAPR, EARL)
Maximum Supply Voltage7
(HDPR, HDML,)
Maximum Supply Voltage8
(VOUT, CAP_VB, CAP_VC, OTG_VIN)
Maximum Supply Voltage9
(Others pins)
Power Dissipation
*1 This value is the permissible loss using a ROHM specification board (50mm x 58mm board mounting).
At the time of PCB mounting the permissible loss varies with the size and material of board.
When using more than at Ta=25℃, it is reduced 10.77 mW per 1℃.（Caution）
Use in excess of this value may result in damage to the device . Moreover, normal operation is not protected.
5.Recommended Operating Ratings (Ta=25°C)
Item
Symbol
Range
Unit
VB
3.8 ～ 28
V
VBAT
2.9 ～ 4.6
V
VDDIO Voltage
VDDIO
1.7 ～ 3.0
V
OTG_VIN Voltage
VOTG
4.40 ～ 5.25
V
VB, VC Voltage
VBAT Voltage
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TSZ02201-0B2B0H300010-1-2
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Datasheet
BD91411GW
6.Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VC=5.0V, VDDIO=1.8V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
VBAT Circuit Current 1
(Standby)
IQVBAT1
-
6
20
μA
VDDIO Circuit current 1
(Standby)
IQVDDIO1
-
0.0
1.0
μA
VBAT Circuit Current 2
(HDSW =ON))
IQVBAT2
-
3
10
μA
IQVB2
-
210
450
μA
Condition
●Circuit Current
VB Circuit Current 2
(HDSW =ON)
VBAT=3.6V, VDDIO=1.8V
VB=VC=Open, OTG_VIN=0V
ID=Open
VBAT=3.6V, VDDIO=1.8V
VB=5V, VC=Open, OTG_VIN=0V
ID=Open
HDSW=ON
IQVBAT3
-
55
150
μA
VBAT=3.6V, VDDIO=1.8V, VB=VC=Open,
OTG_VIN=0V
ID=287kΩ pull down
HPSW,MICSW=ON
IQVC4
-
150
300
μA
VC=5.0V, VB=0.0V, OTG_VIN=0V,
VBAT Circuit Current 5
(OTGSW =ON)
IQVBAT5
-
3
10
μA
OTG_VIN Circuit Current 5
(OTGSW =ON)
IQOTG5
-
230
450
μA
VBAT=3.6V, VDDIO=1.8V, VB=VC=Open
OTG_VIN=5V
ID=0kΩ pull down
OTGSW=ON
VBAT Circuit Current 3
(HPSW,MICSW= ON)
VC Circuit Current 4
(standby)
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=VC=5.0V, VDDIO=1.8V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
●Digital characteristics(Digital Pins: SCL, SDA, RST, INTB, CHG_DET, OTG_DET, FACT_DET ,VCDET and VBDET,
IDSEL, LDOSEL, USBDISEN, DCDMODE, DSS)
Input "H" level (SCL, SDA, RST)
VIH1
0.8×VDDIO
VDDIO+0.3
V
Input "L" level (SCL, SDA, RST)
VIL1
-0.3
0.2×VDDIO
V
Input leak current (SCL, SDA, RST)
IIC1
-1
0
1
μA Pin voltage: VDDIO
VOLS
DA
-
-
0.4
V
IOL=6mA
VOL1
-
-
0.3
V
Source=1mA
IIOFF1
-3
-
3
μA
VIN=VDDIO
IIOFF2
-3
-
3
μA
VIN=VC(VCDET) or
VB(VBDET)
Input “H” Level (IDSEL,
USBDISEN,DCDMODE, DSS）
VIH2
0.8×VCCIN
-
VCCIN+0.3
V
*1
Input “L” Level (IDSEL,
USBDISEN,DCDMODE, DSS）
VIL2
-0.3
-
0.2×VCCIN
V
*1
Input “H” Level (LDOSEL）
VIH3
2.0
-
VCCIN+0.3
V
*1
Input “L” Level (LDOSEL）
VIL3
-0.3
-
0.6
V
Input Leakage Current(IDSEL,
LDOSEL, USBDISEN, DCDMODE,
DSS）
IIC2
-1
0
1
μA
Vf
-
0.6
-
V
Output Voltage “L” (SDA）
Output Voltage “L”
(INTB, VCDET, VBDET, CHG_DET,
OTG_DET, FACT_DET)
OFF Leakage Current (INTB,
CHG_DET, OTG_DET,
FACT_DET)
OFF Leakage Current
(VCDET, VBDET)
Diode forward Voltage
*1
Pin voltage: VCCIN
VCCIN = (VOUT or VBAT or VB or VC) – Vf
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TSZ02201-0B2B0H300010-1-2
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Datasheet
BD91411GW
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VC=0.0V, VDDIO=1.8V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
UVLO release voltage
UVLO1H
3.6
3.8
4.0
V
VIN=up
UVLO detect voltage
UVLO1L
3.0
3.125
3.25
V
VIN=down
OVLO detect voltage
OVLO1
6.2
6.4
6.6
V
VIN=up
OVLO hysteresis voltage
OVLOh1
-
120
-
mV
Over current limit
ILM1
2.0
-
-
A
On resistance of SW
RON1
-
120
250
mΩ
Start up delay time
Ton1
-
5
10
msec
Output turn off time
Toff1
-
1
5
μsec
Reverse Leak Current
Ileak1
-3
-
3
μA
●OVP (VB : SW2 )
VIN=down
VB – VOUT SW
VB=0.0V, VC=5.0V
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=0.0V, VC=5.0V, VDDIO=1.8V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
UVLO release voltage
UVLO2H
3.6
3.8
4.0
V
VIN=up
UVLO detect voltage
UVLO2L
3.0
3.125
3.25
V
VIN=down
OVLO detect voltage
OVLO2
6.2
6.4
6.6
V
VIN=up
OVLO hysteresis voltage
OVLOh2
-
120
-
mV
Over current limit
ILM2
2.0
-
-
A
On resistance of SW
RON2
-
120
250
mΩ
Start up delay time
Ton2
-
5
10
msec
Output turn off time
Toff2
-
1
5
μsec
Reverse Leak Current
Ileak2
-3
-
3
μA
●OVP (VC : SW1 )
VIN=down
VC – VOUT SW
VB=5.0V, VC=0.0V
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VC=0.0V, VDDIO=1.8V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
3.20
3.30
3.40
V
LDOSEL=H,
Iload = 1mA
4.75
4.90
5.05
V
LDOSEL=L,
Iload = 1mA
30
-
-
mA
●VBREG
Output Voltage（3.3V Mode）
Output Voltage（4.9V Mode）
LDOVOUT
33
LDOVOUT
49
Output Current
LDOMAXI
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V , VB=VC=0V, VDDIO=1.8V, OTG_VIN=5V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
RON
OTGSW
-
0.2
0.5
Ω
Toff3
-
0.2
5
μsec
Condition
●OTGSW
On resistance of SW
Output turn off time
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OTG_VIN=5.0V
OTGSW=ON
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VDDIO=1.8V, VB=VC=0V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Analog signal input range
VIN_LR
-1.4
－
1.4
V
ON resistance
RON
HPSW
－
5
10
Ω
THD_HP
－
0.02
0.10
%
CT
－
－
-90
dB
Pull down resistance
RPD
HPSW
－
500
－
Ω
HPSW start up time
TUPHP
-
-
2
ms
Condition
●HPSW (EARR,EARL)
Total Harmonic Distortion
Cross talk
EARR = EARL= 0V
SINK=10mA
f=1kHz
Vin=1.4Vpp
RL=16Ω
Filter:20kHz LPF
RL=16Ω, f=1kHz
Filter: DIN AUDIO
HPSW OFF->ON
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VDDIO=1.8V, VC=0V, OTG_VIN=0V)
Parameter
Symbol
●HDSW (HDP1, HDM1, HDP2, HDM2)
RON
SW resistance when ON
HDSW
Min.
Typ.
Max.
Unit
Condition
－
5
10
Ω
VIN=3.3V or 0V
Input current when OFF
IIOFF
-3
－
3
μA
VIN=3.3V or 0V
VB=OPEN
SW capacitance
CSW
－
(6)
－
pF
HDSW ON
TUPHD
－
－
2
ms
HDSW OFF->ON
HDSW start up time
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VDDIO=1.8V, VB=VC=0V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Analog signal input range
VIN_MIC
0
－
2.5
V
SW resistance when ON
RON
MICSW
－
20
40
Ω
VIN=2.5V or 0V
Input current when OFF
IIOFF
-3
－
3
μA
VIN=2.5V or 0V
●MICSW (MIC : SW4, SW5 )
Total Harmonic Distortion
THD_MIC
－
0.02
0.10
%
f=1kHz
Vin=1.0Vpp
Vbias=2.0V
RL=10kΩ
Filter:20kHz LPF
TUPMIC
-
-
2
ms
MICSW OFF-> ON
MICSW start up time
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VDDIO=1.8V, VB=VC=0V, OTG_VIN=0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
On resistance of SW
RON
CBUSSW
－
5
10
Ω
Cut off Frequency
FCCBUS
-
(100)
-
MHz
@-3dB
Leak current when OFF
IIOFF
-3
－
3
μA
VIN=3.3V or 0V
CBUSSW start up time
TUPCBUS
-
-
2
ms
CBUSSW OFF->ON
●CBUSSW
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Datasheet
BD91411GW
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VDDIO=1.8V, VC=0V, OTG_VIN=0V)
Parameter
●USBCHG_DET
VDP_SRC Voltage
(D+ Output Voltage)
VDM_SRC Voltage
(D- Output Voltage)
RCD Resistance
(D+ pull up resistance)
Not USB port detect
(Host D+ pull down resistance)
VDAT_REF voltage
(D+/D- detect voltage)
VLGC voltage
(D+/D- detect voltage)
D+ sink current
D- sink current
Symbol
Min.
Typ.
Max.
Unit
Condition
VDP_SRC
0.5
0.6
0.7
V
Io=0～200uA
VDM_SRC
0.5
0.6
0.7
V
Io=0～200uA
RCD
75
100
125
kΩ
RHDP
100
-
-
kΩ
VDAT_REF
0.3
0.35
0.4
V
When HDPR/HDML up
VLGC
1.2
1.4
1.6
V
When HDPR/HDML up
IDP_SINK
50
85
150
uA
V(HDPR) = 0.6V
IDM_SINK
50
85
150
uA
V(HDML) = 0.6V
●Electrical Characteristic (Unless otherwise specified, Ta=25°C, VBAT=3.6V, VB=5.0V, VDDIO=1.8V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
RIDopen
RID1
1000
-
-
kΩ
-
797
-
kΩ
RID2
-
557
-
kΩ
RID3
-
440
-
kΩ
RID4
-
390
-
kΩ
RID5
-
287
-
kΩ
RID6
-
200
-
kΩ
RID7
-
180
-
kΩ
RID8
-
124
-
kΩ
RID9
-
102
-
kΩ
RID10
-
68
-
kΩ
RID11
-
47
-
kΩ
RID12
-
36.5
-
kΩ
RID13
-
1
-
kΩ
RID14
-
0
50
Ω
COMPH detection voltage
RatioH
85
90
95
%
COMPL detection voltage
RatioL
22
26
30
%
Condition
●ID
Connected resistance
detect
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Open detection
GND detection
Ratio = 100 x V (ID) / VCCIN [%]
When ID voltage is up.
Ratio = 100 x V (ID) / VCCIN [%]
When ID voltage is down
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
7.Features
7-1.Pull down resistance detection in ID pin.
After power-on reset is released by applying a operating voltage to the VB, VC or VBAT pin, the IDRDET block is turned on and
becomes ready for insertion detection by the 1.2-MΩ pull-up resistance. Insertion will be detected by connecting the pull-down
resistance to the ID pin. Insertion will be detected also when an operating voltage is applied to the VB, VC or VBAT pin with the
pull-down resistance connected to the ID pin
When AD conversion will be completed, the interrupt will be triggered.
7-1-1.Priority of MHLSW and ID detection.
When the signal path connecting the ID pin and the CBUS pin is turned on, all functions for detecting the resistance value of the
ID pin are disabled.
7-1-2.Application with SEND/END switch detection.
When the detected value of the resistance connected to the ID pin is 797 kΩ, 557 kΩ, 287 kΩ, or 47 kΩ, the comparator COMPL
for judging presses on the SEND/END switch will be turned on. By pressing the SEND/END switch of the application, "1" will be
written to the register, and at the same time, an interrupt will be triggered at the INTB pin.
7-1-2-1.OTG Application Detection
When the detected value of the resistance connected to the ID pin is below 20Ω, the OTG_DET pin will be driven to L assuming
that a OTG device is detected and “1” will be written to Register.
7-1-2-2.MHL Application Detection
When the detected value of the resistance connected to the ID pin is 1KΩ, a MHL application is detected.
7-1-3.Enable for ID pin pull down resistance detection.
The function of detecting the value of the resistance connected to the ID pin is turned on in the initial state but can be turned on
or off by changing the setting in the register.
7-1-4.Retry of ID detection sequence.
During the period from the detection of the value of the ID pin pull-down resistance to detection of removed application, a retry
can be made to AD-convert the value of the ID pin pull-down resistance at any desired timing by changing the setting in the
register.
7-1-5.Polling mode of ID detection sequence.
The LSI will enter polling mode, in which the resistance value of the ID pin will be repeatedly detected, an interrupt will trigger to
the INTB pin only when both ID resistance or register will be updated.
7-1-6.Remove ID pin pull down resistance. (Application detachment)
Pull-out detection will occur if the pull-down resistance is disconnected from the ID pin with the comparator COMPH turned on.
After detection of removed application, and an interrupt will be triggered at the INTB pin.
7-2.USB port detection.
When the voltage is normally applied to the VB pin and power-on reset is released, the USB port detection function will be
turned on and automatically detect the circuit connected to the HDPR pin and to the HDML pin. The USB port detection
function can identify a Standard Downstream Port (SDP), a Dedicated Charging Port (DCP), and a Charging Downstream
Port (CDP) that are compliant with BCS Rev. 1.2. Ports, except for some dedicated chargers, are designed to be SDP
detected according to BCS Rev. 1.2 in principle if they are incompliant with USB standards or BCS. When USB port detection
will be completed, the interrupt will be triggered.
7-2-1.Data Contact Detect/DCD
In data contact detection, contact detection to USB data pin (D+) is performed via HDPR pin. USB data pin contact is
completed or timed out, and then this LSI performs Primary detection.
7-2-2.Configuration of DCD time out.
The timeout period can be selected by the DCDMODE external pin.
7-2-3.Primary Detection
In the primary detection, the HDML pin will be compared to identify whether the type of the connection destination host port is a
BCS-compliant Charging port or the port defined in USB 2.0.
7-2-4. Secondary Detection
In the secondary detection, to identify whether the type of the connection destination host port is a Dedicated Charging Port
compliant with BCS1.2 (BCS-compliant dedicated charger) or a Charging Downstream Port (BCS-complaint charging port
through which data can be communicated).
Whichever type of charging port is detected, the result will be stored in the register, and the CHG_DET pin will be driven to
inform that a Charging port has been connected.
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7-2-5.Shortening of second detection by Enumeration preparation
The second detection after primary is detected has already been shortened while judging the USB port when a portable
device equipped with this LSI is possible Enumeration and CDP will be detected compulsorily.
7-2-6.Sequence Retrying.
After the completion of the USB port detection (SDPDET, CDPDET, or DCPDET in the state transition diagram), detection can
be retried at any timing. Retries will not be accepted while USB port detection is operating.
7-2-7.Deactivation of USB port detection by External PIN and Internal Register.
The combination of the USBDISEN external pin and the USBDETCTRL@02h register makes it possible to freely turn on or off
the USB port detection function.
7-3.Signal paths
This LSI is capable of controlling the signal paths between the HDPR/HDML pins and the HDP1/HDM1,
HDP2/HDM2,EARR/EARL, and MICOUT pins from the I2C interface. It is capable of controlling the signal path between the
VB pin and the MICOUT pin as well.
For MHL transmission/USB transmission, use the path to HDP1/HDM1 or to HDP2/HDM2 enabling high-speed transmission.
The signal paths to EARR/EARL and to MICOUT do not support high-speed signal transmission.
7-3-1.HDPR/HDML Signal paths
The HDPR pin has a signal path to each of the HDP1, HDP2, EARR, and MICOUT pins, whereas the HDML pin has a signal
path to each of the HDM1, HDM2, and EARL pins.
7-3-2.Configuration of MUXSW initial path by DSS PIN.
The initially selected state of the signal paths can be controlled by the DSS pin. When the state of the DSS pin is "L," the signal
path to the HDP1/HDM1 pin will be selected. When the state of the DSS pin is "H," the signal path to the HDP2/HDM2 pin will
be selected.
7-3-3.Pull-down resistance in EARR/RARL pin.
A 500Ω pull-down resistance exists in the signal paths to the EARL pin and the EARR pin. The ON/OFF state of these
resistances can be controlled independently by the register.
7-3-4.Signal path between ID pin and CBUS pin.
The ID pin has a signal path to the CBUS pin. The signal paths can be selected in the register.
7-4.Interrupt report with INTB pin.
This LSI reports such events as the completion of detection of the resistor connected to the ID pin and the completion of USB
port detection to trigger as interrupt signals to the INTB pin. The INTB pin is of an Nch open drain structure, and the logic of
an interrupt to be triggered is determined by the register. In the initial state, the INTB pin is set to be driven to L when an
interrupt is triggered. The output of the pin is Hi-Z when there is no interrupt.
7-4-1.Active level selector of INTB.
The active level for interrupts can be selected in the register. In the initial state, the value in the register is "0," which drives the
INTB pin to "L" at the time of the trigger of an interrupt. By writing "1" into the register, the INTB pin will open (Hi-Z) at the time of
the trigger of an interrupt.
7-4-2.Interrupt polarity.
Interrupt polarity can be changed by writing register. In initial state INTB is droved with “L” when interrupt will be triggered.
7-5.Detection of Cradle and VBUS by VBDET pin and VCDET pin.
The application of a voltage from the VBUS or cradle can be detected using the VBDET pin or VCDET pin.
7-6.Detection of Cradle and VBUS by I2C interface reading.
The application of the voltage to the VBUS pin or cradle can be checked through the I2C interface by controlling of registers.
7-7.Detection of Over current state by I2C Interface reading.
This LSI has an independent OCP in each of the VB and VC power supply systems, and its over-current state can be
detected by accessing it from the I2C interface.
7-8.Thermal Shut down.
If the junction temperature exceeds the set temperature, the thermal shutdown circuit will become activated and turn off the
SW1 and SW2 of the OVP. The TSD detection temperature is 180℃, and the hysteresis temperature for recovery is 10℃.
7-9.VBREG Regulator.
This LSI has a regulator driven by the VBUS voltage. The output from the regulator can be turned on by the VBREG pin in the
default state by increasing the voltage of the VB pin to UVLO or a higher level. The VBREG output pin is available for external
applications, and two output voltage levels can be selected by LDOSEL pin.
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7-10.OTG mode control
To permit power supply from a portable device in the On-The-Go mode of USB2.0, this LSI has an independent power path
from the OTG_VIN pin to the VB pin.
7-11.VBUS signal path.
This LSI can select the signal path from the VB pin to the MICOUT pin. By setting "1" in the register with UVLO applied to the
VB pin, the VB pin and the MICOUT pin will be connected to each other. These pins will be disconnected by setting "0" in the
register.
7-12.Reset systems
This LSI has three reset modes - "power-on reset," "hardware reset," and "software reset."
Any resets initialize all functions include all registers.
7-12-1.Power-On Reset
Power-on reset initializes all of the functions of this LSI. When VCCIN is supplied, power-on reset will be automatically released
as the UVLO of the VB, VC, or VBAT pin is cleared.
7-12-2.Hardware Reset with RST.
A hardware reset is triggered by external pin RST and can reset all of the functions of this LSI. RST is an H enable pin. It
triggers a reset when a voltage within the VIH voltage range is applied to the RST pin, and releases the reset when a voltage
within the VIL voltage range is applied to the RST pin.
7-12-3.Software reset from I2C Interface writing.
A software reset can be executed by writing "1" into register from the I2C interface. A software reset can initialize all of the
functions of this LSI.
2
7-13.I C Interface electrical characteristics.
AC Characteristics on I2C Bus.
Characteristics
CLK clock frequency
CLK clock “low” time
CLK clock “high” time
Bus free time
Start condition hold time
Start condition setup time
Data input hold time
Data input setup time
Stop condition setup time
tF
Sign
fCLK
tLOW
tHIGH
tBUF
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tSU.STO
tHIGH
Min
0
1.3
0.6
1.3
0.6
0.6
0
100
0.6
Max
400
0.9
-
tLOW
Unit
kHz
µs
µs
µs
µs
µs
µs
ns
µs
tR
CLK
tSU.STA tHD.STA
tHD.DAT tSU.DAT
tSU.STO
DATA
(INPUT)
tBUF
Fig 1. SCL/SDA bus AC Timing１
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Datasheet
BD91411GW
CLK
DATA
(INPUT)
DO
tWR
Write data
input
Acknowledge
output
Start
condition
Stop
condition
Fig 2. SCL/SDA bus AC Timing２
7-14.I2C Bus Interface
7-14-1.START and STOP Conditions
When CLK is set at "H" and DATA is changed from "H" and "L," a start condition will be established, and access will begin.
By setting changing SDA from "L" to "H" with CLK set at "H," a stop condition will be satisfied, and access will be terminated.
All commands begin with a start condition and stop with a stop condition. If a stop condition is generated in the middle of
reading, reading will be discontinued, and the application will enter standby mode.
If a stop condition is generated in the middle of writing, writing will be suspended until the next start condition, and the
application will enter standby mode.
tSU.STA tHD.STA
tSU.STO
CLK
DATA
Start
condition
Stop
condition
Fig. 3. START and STOP Condition AC Timing.
7-14-2.Modifying Data
One-bit data is transferred while SCL is "H". During bit data transfer, the signal transition of SDA cannot be executed while CL
is "H". When SCL is "H" and SDA changes, a start condition or stop condition will be generated and interpreted as a control
signal.
tSU.DAT
tHD.DAT
CLK
DATA
Modify data
Modify data
Fig 4. Data transfer AC Timing.
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BD91411GW
7-14-3.Acknowledge
After a start condition is generated, data will be transferred in eight-bit blocks. After data transfer in eight-bit blocks, the
transmitter opens SDA in the ninth cycle, and the receiver returns an acknowledge signal in the ninth cycle by changing SDA
to "L." The data is thereby received in a proper manner.
During writing, the receiver returns an acknowledge signal each time it receives eight-bit data, and the transmitter receives
the signal.
During reading, the transmitter returns an acknowledge signal after it receives an address following a start condition. The
transmitter then receives read data and opens the bus to wait for an acknowledge signal from the receiver. When an
acknowledge signal is detected, the receiver outputs the next address data unless a stop condition is generated. Unless
acknowledge signal is detected or stop condition is generated, the receiver does not enter standby mode.
The bus is kept open until an acknowledge signal or stop condition is detected.
1
CLK
9
8
DATA
DATA
Start condition
Acknowledge output
Fig 5. Acknowledge AC Timing.
7-14-4.Device Address
After a start condition is generated, a seven-bit device address and the a one-bit read/write command selection bit will be
input. The device address is "1101110" when IDSEL is "H" (VCCIN short), or "1101010" when IDSEL is "L" (GND short).
A one-bit (R/E READ/WRITE) signal becomes a read command when it is set at "1," or a write command when it is set at
"0."If the device address does not match, the command will not be executed.
Read/write instruction
code
Device address
＊ ＊
＊ ＊
＊
＊
＊
R/W
MSB
LSB
A7
A6
A5
A4
A3
A2
A1
IDSEL
1
1
0
1
0
1
0
0
1
1
0
1
1
1
0
1
I2C Device address
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7-14-5.Write operation
To write data to the designated address, input the device address, the one-bit signal of "0" (R/W command selection bit), the
word address, and the data to be written after the start condition.
The application enters standby mode upon generation of a stop condition.
S XX XX XXX 0 A
Device Address
WWW WW WW W D D D D D D D D D
A
A
7 65 432 10 7 65 43 210 7
Word Address
D D DD DD DD D
A
AP
0 7 654 32 10
Write Data(n)
R/W
(Write)
Write Data(n+1)
Increment
Register Address
Increment
Register Address
A = Acknowledge (SDA Low)
S = START Condition
A = Not Acknowledge (SDA High) P = STOP Condition
Fig 6. Write protocol sequence.
Write a start condition, a device address, a one-bit signal of "0" (R/W command selection bit), a word address (n), and
address (n) data, and then address (n +1) data. The acknowledge signal will become "0" or be checked unless a stop
condition is generated.
7-14-6. Address roll back specification.
Write, read, and complex read will perform, and the word address will be rolled over by address 00h when the address
reaches 07h.
7-14-7. Read back operation.
When reading data from the designated address, the data to be read will be output by writing a device address, a one-bit
signal of "0" (R/W command selection bit), and a word address after a start condition and then inputting a start condition, a
device address, and a one-bit signal of "1" (R/W command selection bit).
The bus opens with a stop condition.
SX XXX XX X 1 A
Device Address
R/W
(Read)
DD DD DD DD D
A
76 543 21 0 7
D DD DD DDD D
A
AP
0 7 65 43 21 0
Read Data(n)
Read Data(n+1)
Increment
Register Address
Increment
Register Address
S = START Condition
A = Acknowledge (SDA Low)
A = Not Acknowledge (SDA High) P = STOP Condition
Fig 7 Read back protocol sequence.
S XX XX XXX 0 A
Device Address
AA AA AAA A
D DDD DD DD D
A Sr X X X X X X X 1 A
A
7 65 432 10
76 54 321 0 7
Word Address
Device Address
R/W
(Write)
Read Data(n)
R/W
(Read)
A = Acknowledge (SDA Low)
A = Not Acknowledge (SDA High)
D DD DD DD DD
A
AP
0 76 543 21 0
Increment
Register Address
Read Data(n+1)
Increment
Register Address
S = START Condition
Sr = Repeated START Condition
P = STOP Condition
Fig 8. Complex read back protocol sequence.
Complex read back a start condition, a device address, a one-bit signal of "0" (R/W command selection bit), a word address
(n), and address (n) data, and then address (n +1) data. The acknowledge signal will become "0" or be checked unless a stop
condition is generated.
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BD91411GW
8.Typical Performance Curves
Fig12.MHL Eye-Pattern(720p, 60Hz)
Fig13.MHL Eye-Pattern(480p, 60Hz)
Fig14.USB Eye-Pattern(High-speed)
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BD91411GW
9.Application Circuit Diagram
CAP_VC
VOUT
to Charger
0.1μF
VOUT
VDDIO
SW1
VOUT
VC
CRADLE
VC
VOUT
ILMT
to Host
VC
VCDET
VCDET
to SW, MAIN
CONTROL
ATEST0
VCSW
CAP_VB
TSD
VDDIO
0.1μF
VB
SW2
to Host
VBDET
VB
ILMT
VB
VBDET
to SW, MAIN
CONTROL
ATEST1
to USB Transceiver
VBSW
VBREG
VBREG
1.0μF
LDOSEL
Internal Power for OTG
OTGSW
OTG_VIN
to MIC Amplifier
SW4
MICOUT
SW5
Receptacle
MICSW
HDM1
HDM2
EARL
from MHL TXto USB PHY
from HP Amplifier
VBUS
HDML
D-
HDP1
HDP2
HDPR
D+
EARR
VDDIO
to Charger
to Host
VOUT
OTG_DET
VB
VBAT
VC
GND
VDDIO
VB
VCCIN
Battery
to Host
CHG_DET
to Host
ID
MICSW（SW4）
VBSW（SW2）
VCCIN
VCSW（SW1）
VBSW（SW2）
VCSW（SW1）
CBUS_SW
MICSW（SW4,5）
MUXSW
USBCHGDET
to
ID Detection
MAIN
CONTROL
USB
Charger
Detection
GND
VCCIN
GND
SCL
SDA
RST
SW
CONTROL
INTB
IDSEL
DSS
to Host
IDDET
VDDIO
from System Reset
to
MAIN
CONTROL
CBUS
Internal Power for SYSTEM IO
to Host
to Host
0.1μF
VBREG
CBUS_SW
to MHL TX/USB TRX
ID
+
from MHL TX+
to USB PHY
from HP Amplifier
MUXSW
MAIN
CONTROL
FACT_DET
TMODE0
DCDMODE
TMODE1
USBDISEN
Fig.15 Application Circuit Diagram
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Datasheet
BD91411GW
10.I/O equivalence circuits
Ball No.
Ball Name
I/O equivalence circuits
VCCIN
G1
G7
TMODE0
TMODE1
G1
G7
VDDIO
E4
E5
RST
SCL
E4
E5
VDDIO
E6
SDA
E3
C6
D2
D4
D5
DSS
IDSEL
LDOSEL
USBDISEN
DCDMODE
C4
C5
VCDET
VBDET
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
E6
VCCIN
E3
C6
D2
D4
D5
C4
18/24
C5
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
Ball No.
Ball Name
I/O equivalence circuits
SW1
B6
B7
B6
B7
C7
A6
A4
A5
B4
B5
A2
A3
B2
B3
B1
VC
VC
VC
CAP_VC
VOUT
VOUT
VOUT
VOUT
VB
VB
VB
CAP_VB
OTG_VIN
C7
A6
SW2
B4
A4
B5
A5
A2
A3
B2
B3
SW3
B1
to MIC_SW
SW4
to VB
E2
MICOUT
SW5
E2
to HDPR
to MIC_SW(SW5)
E1
F1
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
E1
to HDP1
to HDP2
to EARR
F1
to HDM1
to HDM2
to EARL
HDPR
HDML
19/24
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12.Jul.2012 Rev.001
Datasheet
BD91411GW
Ball No.
Ball Name
I/O equivalence circuits
VBAT
F6
VB
VC
VOUT
VCCIN
F6
VB
C1
VBREG
C1
CBUSSW
F5
CBUS
A7
A1
ATEST1
ATEST0
E7
F7
VBAT
VDDIO
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
F5
A1
A7
E7
F7
20/24
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
Ball No.
Ball Name
I/O equivalence circuits
HDSW1
G2
G3
HDM1
HDP1
G2
G3
HP SW
G4
G5
G4
EARL
EARR
500Ω
G5
HDSW2
F2
F3
HDM2
HDP2
F2
F3
VDDIO
D6
F4
D3
C2
INTB
FACT_DET
CHG_DET
OTG_DET
F4 D6
C2 D3
VCCIN
G6
ID
4KΩ
200KΩ
G6
CBUSSW
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
21/24
1.3MΩ
+
-
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
11.Operational Notes
1)
Absolute maximum ratings
If applied voltage, operating temperature range (Topr), or other absolute maximum ratings are exceeded, there is a risk
of damage. Since it is not possible to identify short, open, or other damage modes, if special modes in which absolute
maximum ratings are exceeded are assumed, consider applying fuses or other physical safety measures.
2) Recommended operating range
This is the range within which it is possible to obtain roughly the expected characteristics. For electrical
characteristics, it is those that are guaranteed under the conditions for each parameter. Even when these are within
the recommended operating range, voltage and temperature characteristics are indicated.
3) Reverse connection of power supply connector.
There is a risk of damaging the LSI by reverse connection of the power supply connector. For protection from reverse
connection, take measures such as externally placing a diode between the power supply and the power supply pin of
the LSI.
4) Power supply lines
In the design of the board pattern, make power supply and GND line wiring low impedance.
When doing so, although the digital power supply and analog power supply are the same potential, separate the digital
power supply pattern and analog power supply pattern to deter digital noise from entering the analog power supply due
to the common impedance of the wiring patterns. Similarly take pattern design into account for GND lines as well.
Furthermore, for all power supply pins of the LSI, in conjunction with inserting capacitors between power supply and
GND pins, when using electrolytic capacitors, determine constants upon adequately confirming that capacitance loss
occurring at low temperatures is not a problem for various characteristics of the capacitors used.
5) GND voltage
About the pins except for EARR, EARL, DPRXR and DMTXL, make the potential of a GND pin such that it will be the
lowest potential even if operating below that. In addition, confirm that there are no pins for which the potential
becomes less than a GND by actually including transition phenomena.
6) Shorts between pins and miss assemble
When assemble in the set board, pay adequate attention to orientation and placement discrepancies of the LSI. If it is
assembled erroneously, there is a risk of LSI damage. There also is a risk of damage if a foreign substance getting
between pins or between a pin and a power supply or GND shorts it.
7) Operation in strong magnetic fields
Be careful when using the LSI in a strong magnetic field, since it may malfunction.
8) Inspection in set board
When inspecting the LSI in the set board, since there is a risk of stress to the LSI when capacitors are connected to
low impedance LSI pins, be sure to discharge for each process. Moreover, when getting it on and off of a jig in the
inspection process, always connect it after turning off the power supply, perform the inspection, and remove it after
turning off the power supply. Furthermore, as countermeasures against static electricity, use grounding in the
assembly process and take appropriate care in transport and storage.
9) Input pins
Parasitic elements inevitably are formed on a LSI structure due to potential relationships. Because parasitic elements
operate, they give rise to interference with circuit operation and may be the cause of malfunctions as well as damage.
Accordingly, take care not to apply a lower voltage than GND to an input pin or use the LSI in other ways such that
parasitic elements operate. Moreover, do not apply a voltage to an input pin when the power supply voltage is not
being applied to the LSI. Furthermore, when the power supply voltage is being applied, make each input pin a voltage
less than the power supply voltage as well as within the guaranteed values of electrical characteristics.
10) Ground wiring pattern
When there is a small signal GND and a large current GND, it is recommended that you separate the large current
GND pattern and small signal GND pattern and provide single point grounding at the reference point of the set so that
voltage variation due to resistance components of the pattern wiring and large currents do not cause the small signal
GND voltage to change. Take care that the GND wiring pattern of externally attached components also does not
change.
11) Externally attached capacitors
When using ceramic capacitors for externally attached capacitors, determine constants upon taking into account a
lowering of the rated capacitance due to DC bias and capacitance change due to factors such as temperature.
12) Thermal shutdown circuit (TSD)
When junction temperatures become 180°C (typ) or higher, the thermal shutdown circuit operates and turns OVP
switch OFF. The thermal shutdown circuit, which is aimed at isolating the LSI from thermal runaway as much as
possible, is not aimed at the protection or guarantee of the LSI. Therefore, do not continuously use the LSI with this
circuit operating or use the LSI assuming its operation.
13) Thermal design
Perform thermal design in which there are adequate margins by taking into account the permissible dissipation (Pd) in
actual states of use.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a
reference to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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12.Jul.2012 Rev.001
Datasheet
BD91411GW
12.Ordering Information
B
D
9
1
4
1
Part Number
1
G
W
-
Package
GW: UCSP75M3
E2
Packaging and forming specification
E2: Embossed tape and reel
13.Physical Dimension Tape and Reel Information
UCSP75M3(BD91411GW)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
1pin
Reel
)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
14.Marking Diagram
UCSP75M3(BD91411GW)
TOP VIEW
Product Name.
Lot No.
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
23/24
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
BD91411GW
15.Revision History
Date
Revision
13.Jul.2012
001
Changes
New Release
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
24/24
TSZ02201-0B2B0H300010-1-2
12.Jul.2012 Rev.001
Datasheet
Notice
●General Precaution
1) Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2) All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
●Precaution on using ROHM Products
1) Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
2)
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3)
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4)
The Products are not subject to radiation-proof design.
5)
Please verify and confirm characteristics of the final or mounted products in using the Products.
6)
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7)
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8)
Confirm that operation temperature is within the specified range described in the product specification.
9)
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.
Datasheet
●Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2)
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
●Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2)
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
●Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2)
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3)
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4)
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
●Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
●Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
●Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
●Precaution Regarding Intellectual Property Rights
1) All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2)
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.
Datasheet
●Other Precaution
1) The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
2)
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
3)
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
4)
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
5)
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.