ASW215 5-4000 MHz MMIC Amplifier Features Description ·16 dB Gain at 900 MHz The ASW215, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. ·19 dBm P1dB at 900 MHz ·37 dBm Output IP3 at 900 MHz ·3.8 dB NF at 900 MHz ·MTTF > 100 Years ·Single Supply ASW215 Package Style: SOT-89 Typical Performance Parameters Frequency Units Application Circuit Typical MHz 900 2000 3500 Gain dB 16 12 10 ·5 ~ 42 MHz S11 dB -18 -15 -18 ·IF dB -18 -18 -18 ·500 ~ 3500 MHz S22 1) Output IP3 dBm 37 35 28 Noise Figure dB 3.8 4.3 4.8 Output P1dB dBm 19 19 16 Current mA 83 83 83 V 5 5 5 Typ Max Device Voltage 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Product Specifications Parameters Testing Frequency Units Gain dB S11 dB S22 Min MHz 900 15 dB Output IP3 dBm 16 -18 -18 35 37 Noise Figure dB Output P1dB dBm 18 19 Current mA 78 83 Device Voltage V 3.8 4.0 90 5 Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +6 V Operating Junction Temperature +150°C Pin No. Function Input RF Power (CW, 50ohm matched)* 25 dBm 1 RF IN 2 GND 3 RF OUT / Bias * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/7 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASW215 Pxxxx Dimensions (In mm) MIN NOM MAX 1.40 1.50 1.60 0.89 1.04 1.20 0.36 0.42 0.48 0.41 0.47 0.53 0.38 0.40 0.43 4.40 4.50 4.60 1.40 1.60 1.75 3.64 --4.25 2.40 2.50 2.60 2.90 3.00 3.10 0.35 0.40 0.45 0.65 0.75 0.85 1.40 1.50 1.60 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow 2/7 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 5 42 Magnitude S21 (dB) 18.5 18.5 Magnitude S11 (dB) -14 -16 Magnitude S22 (dB) -11 -14 Output P1dB (dBm) 19 19 5 ~ 42 MHz Output IP3 (dBm) 37 37 +5 V Noise Figure (dB) 3.4 3.4 1) Device Voltage (V) 5 5 Current (mA) 83 83 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=4.7mH (Coil Inductor) RF IN C1=1 mF C2=1 mF RF OUT ASW215 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 -15 -20 0 50 100 150 200 250 300 -25 0 50 100 Frequency (MHz) 150 200 250 300 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 50 100 150 200 250 300 0 0 500 Frequency (MHz) 3/7 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT IF 70 ~ 450 MHz +5 V 70 150 300 450 Magnitude S21 (dB) 18.5 18.5 18 17.5 Magnitude S11 (dB) -15 -15 -18 -18 Magnitude S22 (dB) -14 -14 -14 -13.5 Output P1dB (dBm) 19 19 19 19 Output IP31) (dBm) 37.5 38 38 38 Noise Figure (dB) 3.5 3.5 4.3 3.5 Device Voltage (V) 5 5 5 5 Current (mA) 83 83 83 83 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V R1=1 W D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=680 nH C1=1000 pF RF IN C2=1000 pF RF OUT ASW215 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 -15 -20 0 -25 100 200 300 400 500 100 200 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 400 500 3 2 1 -25 0 100 200 300 400 500 0 500 Frequency (MHz) 4/7 300 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 500 900 1750 2000 2400 2700 3500 Magnitude S21 (dB) 17 16 13 12 11.5 11 10 Magnitude S11 (dB) -12 -18 -18 -15 -15 -15 -18 Magnitude S22 (dB) -18 -18 -18 -18 -18 -18 -18 Output P1dB (dBm) 19 19 19 19 18 17 16 500 ~ 3500 MHz Output IP31) (dBm) 37 37 35 35 33 32 28 +5 V Noise Figure (dB) 3.8 3.8 4.0 4.3 4.3 4.5 4.8 Device Voltage (V) 5 Current (mA) 83 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V R1=1 W D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=33 nH C1=100 pF RF IN C2=100 pF RF OUT ASW215 S-parameters & K-factor 25 0 -5 20 -40oc 25oc 85oc -10 S11 (dB) Gain (dB) 15 -40oc 25oc 85oc 10 -15 -20 5 0 -25 0 500 1000 1500 2000 2500 3000 3500 4000 -30 0 500 1000 Frequency (MHz) -40oc 25oc 85oc 3000 3500 4000 4 Stability Factor -10 S22 (dB) 2500 5 -5 -15 -20 3 2 1 -25 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 5/7 2000 Frequency (MHz) 0 -30 1500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 140 18 120 17 16 Gain (dB) Current (mA) 100 80 15 60 Frequency = 900 MHz 14 40 20 -60 -40 -20 0 20 40 60 80 13 -60 100 -40 -20 Temperature ( C) 40 60 80 100 42 24 40 22 -40oc 25oc 85oc -40oc 25oc 85oc 38 Output IP3 (dBm) 20 P1dB (dBm) 20 Output IP3 vs. Frequency P1dB vs. Frequency 18 16 14 12 0 Temperature (oC) o 36 34 32 30 28 0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Output IP3 vs. Tone Power (Frequency = 2000MHz) 45 Output IP3 (dBm) 40 -40oc 25oc 85oc 35 30 25 20 15 -2 0 2 4 6 8 10 12 14 16 Pout per Tone (dBm) 6/7 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Performance with varying VDEVICE VDEVICE (V) Current (mA) Freq. (MHz) 4.9 85 4.7 4.55 4.4 69 52 37 1) Gain (dB) S11 (dB) S22 (dB) OIP3 (dBm) P1dB (dBm) NF (dB) 900 16 -16.6 -23.8 37.3 19.2 3.5 2000 12.8 -18.8 -17.3 34.7 18.6 4.06 3500 10.5 -17.9 -22.5 30.4 16.8 -- 900 15.9 -16.2 -23 34.8 18.2 3.57 2000 12.7 -19.8 -17.2 33.4 17.8 3.96 3500 10.4 -17.3 -21.8 29.7 16 -- 900 15.7 -15.7 -21.8 30 15.2 3.46 2000 12.6 -21.2 -17.3 30 16.3 3.8 3500 10.3 -16.6 -22.4 28 14.5 -- 900 15.1 -14.3 -18.6 21 9 3.37 2000 12.2 -25.7 -17.1 21.8 11.2 3.62 3500 10 -15.2 -21.9 22.6 12 -- 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 7/7 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010