CUS06 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS06 Switching Mode Power Supply Applications Portable Equipment Battery Application Unit: mm 1.25 +− 0.2 0.1 0.13 +− 0.05 0.03 0.88 ± 0.1 • Average forward current: IF (AV) = 1.0 A ② • Repetitive peak reverse voltage: VRRM = 20 V • Suitable for high-density board assembly due to the use of a small 1.9 ± 0.1 Forward voltage: VFM = 0.45 V (max) @IF = 0.7 A 2.5 ± 0.2 • Surface-mount package, US−FLATTM ① 0.6 ± 0.1 0.6 ± 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current IF (AV) 1.0 (Note 1) A IFSM 20 (50 Hz) A Peak one cycle surge forward current (Non-repetitive) Junction temperature Storage temperature range Tj −40 to 150 °C Tstg −40 to 150 °C Note 1: Ta = 66°C: Device mounted on a glass-epoxy board (Board size: 50 mm × 50 mm, Soldering land: 6 mm × 6 mm) Rectangular waveform (α = 180°), VR = 10 V ① ANODE ② CATHODE 1.4 ± 0.2 0.6 ± 0.1 0 ~ 0.05 0.88 ± 0.1 0.78 ± 0.1 0.5 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) 0.6 ± 0.1 JEDEC ⎯ JEITA ⎯ TOSHIBA 3-2B1A Weight: 0.004 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-01 CUS06 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Peak forward voltage Repetitive peak reverse current Junction capacitance Typ. Max Unit IFM = 0.1 A ⎯ 0.35 ⎯ VFM (2) IFM = 0.7 A ⎯ 0.42 0.45 VFM (3) IFM = 1.0 A ⎯ 0.47 ⎯ IRRM (1) VRRM = 5 V ⎯ 0.7 ⎯ μA IRRM (2) VRRM = 20 V ⎯ 3.0 30 μA VR = 10 V, f = 1.0 MHz ⎯ 40 ⎯ pF Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) ⎯ ⎯ 75 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 mm) ⎯ ⎯ 150 Junction to lead of cathode side ⎯ ⎯ 30 Rth (j-a) Thermal resistance (junction to lead) Min VFM (1) Cj Thermal resistance (junction to ambient) Test Condition Rth (j-ℓ) V °C/W °C/W Marking Abbreviation Code Part No. 6 CUS06 Standard Soldering Pad 2.0 0.5 Unit: mm 0.8 0.8 1.1 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is applied. Please take forward and reverse loss into consideration during the design. The absolute maximum ratings are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 120°C. When using this device, take the margin into consideration by using an allowable Tamax-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at Tj of below 120°C. Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. Refer to the Rectifiers databook for further information. 2 2010-02-01 CUS06 iF – vF PF (AV) – IF (AV) 0.6 Average forward power dissipation PF (AV) (W) Tj = 150°C 1 75°C 100°C 25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 Instantaneous forward voltage vF DC 0.5 180° 0.4 120° 0.3 α = 60° 0.1 0°α 360° 0 0 1.0 Conduction angle: α 0.2 0.4 Maximum allowable ambient temperature Ta max (°C) 100 80 120° 180° DC 60 Rectangular waveform 40 20 0 0 IF (AV) Maximum allowable ambient temperature Ta max (°C) 120 α = 60° 0°α 360° Conduction angle: α VR = 10 V 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 IF (AV) 1.4 140 IFSM (A) Peak surge forward current DC 0°α 360° IF (AV) Maximum allowable lead temperature Tℓ max (°C) 180° Rectangular waveform 40 Conduction angle: α VR = 10 V 0.2 0.4 0.6 0.8 Average forward current 1.0 (A) 60 Rectangular waveform 40 0°α 360° 20 120° 180° DC Conduction angle: α VR = 10 V 0.2 0.4 0.6 0.8 1.0 1.2 IF (AV) 1.4 1.6 (A) Surge forward current (non-repetitive) 100 120° 1.6 α = 60° 80 Average forward current 120 α = 60° 1.4 100 (A) 140 0 0 IF (AV) 24 80 1.2 120 Tℓmax – IF (AV) 20 1.0 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) 0 0 1.6 160 60 0.8 Ta max – IF (AV) 160 Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) 140 0.6 Average forward current (V) Ta max – IF (AV) 160 Rectangular waveform 0.2 IF (AV) Instantaneous forward current iF (A) 10 1.2 IF (AV) 1.4 f = 50 Hz 20 16 12 8 4 0 1 1.6 (A) Ta = 25°C 10 100 Number of cycles 3 2010-02-01 CUS06 Cj – VR IR – Tj (typ.) 1000 (typ.) 100 f = 1 MHz Pulse test Ta = 25°C (mA) Reverse current IR 100 15 V 10 V 0.1 5V 3V 0.01 0.001 10 1 10 Reverse voltage 0.0001 0 100 VR 300° DC 240° 180° 0 0 4 120° 8 Reverse voltage 12 VR 80 100 120 16 140 160 (°C) rth (j-a) – t 10000 Conduction angle: α Tj = 150°C 60° 60 (typ.) Rectangular waveform 0.1 40 Junction temperature Tj 0°α 360° 0.2 20 (V) PR (AV) – VR 0.3 Average reverse power dissipation PR (AV) (W) VR=20 V 1 Transient thermal impedance rth (j-a) (°C/W) Junction capacitance Cj (pF) 10 1000 (1) Device mounted on a ceramic board Soldering land: 2 mm × 2 mm (2) Device mounted on a glass-epoxy board Soldering land: 6 mm × 6 mm (3) Device mounted on a glass-epoxy board Standard Soldering pad (3) (2) 10 1 0.001 20 (V) (1) 100 0.01 0.1 1 10 100 1000 Time t (s) 4 2010-02-01 CUS06 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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