AON3406 30V N-Channel MOSFET General Description The AON3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain A Current B TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Lead 1/4 C ±20 V ID 7.8 IDM 30 W 1.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.0 PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V 10 TA=70°C Pulsed Drain Current Maximum 30 RθJA RθJL Typ 32 65 25 °C Max 42 100 35 Units °C/W °C/W °C/W www.freescale.net.cn AON3406 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.003 1 Units V TJ=55°C VGS=10V, ID=10A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 5 ±100 nA 1.75 3 V 12 15 18 22 18 24 mΩ 1 V 4 A A mΩ 30 0.73 955 VGS=0V, VDS=15V, f=1MHz µA S 1200 pF 145 pF 112 pF 0.5 0.85 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17 24 nC Qg(4.5V) Total Gate Charge 9 12 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω Body Diode Reverse Recovery Time 3.4 nC 4.7 nC 5 6.5 ns 6 7.5 ns 19 25 ns 4.5 6 ns 19 21 9 12 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev2 : Nov 2009 2/4 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA www.freescale.net.cn AON3406 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4.5V 32 5V 25 4V ID(A) ID (A) 24 10V 20 VDS=5V 28 15 10 20 125°C 16 12 3.5V 25°C 8 5 4 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 22 Normalized On-Resistance RDS(ON) (mΩ ) 800 140 80 0.5 1.8 VGS=4.5V 18 16 14 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 20 2.5 VGS=10V 12 10 1.6 15 7 1.4 220 140 VGS=10V ID=10A VGS=4.5V ID=9A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=10A 1.0E+00 40 IS (A) RDS(ON) (mΩ ) 1.0E-01 30 125°C 1.0E-02 125°C 25°C AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.0 AON3406 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=10A 1250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1000 750 500 Coss 250 0 0 4 8 12 16 Crss 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 800 140 80 0.5 100.0 100 10µs 100µs 1ms 1.0 DC 10ms 100ms TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 10s 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=42°C/W 15 7 60 40 20 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 220 140 80 RDS(ON) limited Power (W) ID (Amps) 10.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES PD NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE 0.01 0.00001 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn