AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS (V) = 30V ID = 5.8A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A,F Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead 1/4 C ±20 V ID 4.9 IDM 64 W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V 5.8 TA=70°C TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 65 85 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3404A N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=5.8A TJ=125°C VGS=4.5V, ID=4.8A gFS Forward Transconductance VDS=5V, ID=5.8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 100 nA 2.1 2.6 V 18.4 25 26.2 36 24.5 35 mΩ 1 V 2.5 A A 22 0.75 373 mΩ S 448 pF 67 VGS=0V, VDS=0V, f=1MHz 1.8 2.8 Ω 7.1 11 nC pF 41 VGS=10V, VDS=15V, ID=5.8A 3.3 nC nC Gate Source Charge Qgd Gate Drain Charge 1.7 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time 2.4 VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω pF 1.4 Qgs tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5.8A, dI/dt=100A/µs 10.5 Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 4.5 Body Diode Reverse Recovery Time µA VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V VDS=30V, VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ nC 6.5 ns ns 14.8 ns 2.5 ns 12.6 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤ 10s thermal resistance rating. Rev4 May.2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/4 www.freescale.net.cn AO3404A N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V VDS=5V 6V 50 VDS=5V 12 9 4.5V ID(A) ID (A) 40 30 125°C 6 20 125°C VGS=3.5V 3 10 0 25°C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 4 373 67 41 VGS=10V 1.2 Id=5.8A Normalized On-Resistance 1.8 38 3.5 4.5 VGS(Volts) Figure 2: Transfer Characteristics 45 RDS(ON) (mΩ Ω) 25°C VGS=4.5V 31 24 17 VGS=10V 10 1.6 448 1.8 1.4 1.2 VGS=4.5V Id=4.8A 1 0.8 0.6 0 5 10 15 20 0 25 50 75 10.5 100 125 12.6 150 175 4.5 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 ID=5.8A 1.0E+00 1.0E-01 40 125°C IS (A) RDS(ON) (mΩ Ω) 50 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.freescale.net.cn AO3404A N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=5.8A 500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 30 10µs TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 20 10 0.1s DC 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance Power (W) ID (Amps) 10.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4/4 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn