CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4835V8 BVDSS -30V ID RDSON(MAX)@VGS=-10V, ID=-10A -33A 16mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A 25mΩ(typ.) Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTP4835V8 DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTP4835V8-0-T1-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTP4835V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -30 ±25 -33 -25 -10 -8 -80 *1 -10 5 2.5 *2 28 11 2.5 *3 1.6 *3 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.5 50 *3 Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTP4835V8 Min. Typ. Max. Unit -30 -1 - -1.4 16 25 16 -2.5 ±100 -1 -10 24 33 - V V nA μA μA - 1819 138 112 - Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-24V, VGS=0, Tj=125°C VGS=-10V, ID=-10A VGS=-4.5V, ID=-7A VDS=-5V, ID=-10A pF VDS=-15V, VGS=0, f=1MHz mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 9 6 27 9 24 14.6 6.4 6.6 4 Max. - - -0.76 36 25 -3 -12 -1.2 - Unit Test Conditions ns VDD=-15V, ID=-1A, VGS=-10V, RG=2.7Ω nC VDS=-15V, ID=-10A, VGS=-10V Ω VGS=15mV, VDS=0, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTP4835V8 CYStek Product Specification Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 80 -ID, Drain Current(A) 70 10V,9V, 8V, 7V, 6V, 5V 60 50 40 4V 30 -VGS=2V 20 3V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 10 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -60 10 Static Drain-Source On-State resistance vs Drain Current 180 1.2 -VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 VGS=-2.5V 100 VGS=-4.5V VGS=-10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 5 10 15 -IDR, Reverse Drain Current(A) 200 2 R DS(ON) , Normalized Static DrainSource On-State Resistance 180 ID=-10A 160 140 120 100 80 60 40 VGS=-10V, ID=-10A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 16mΩ 20 0 0 0 MTP4835V8 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) -20 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=-250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=-24V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 VDS=-5V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=-15V VDS=-10V 6 4 2 ID=-10A 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 5 10 15 20 Qg, Total Gate Charge(nC) 25 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 100 12 RDS(ON) Limit 10 100μs 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°, VGS=-10V RθJA=50°C/W, Single Pulse DC -ID, Maximum Drain Current(A) -ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 10 8 6 4 2 TA=25°C, VGS=-10V,RθJA=50°C/W 0 0.01 0.01 MTP4835V8 0.1 1 10 -VDS , Drain-Source Voltage(V) 100 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 350 Typical Transfer Characteristics 80 TJ(MAX) =150°C TA=25°C θJA=50°C/W 300 -ID, Drain Current(A) 250 Power (W) VDS=-10V 70 200 150 100 50 60 50 40 30 20 10 0 0.0001 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 Transient Thermal Response Curves 1 D=0.5 ZθJC(t), Thermal Response 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTP4835V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTP4835V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP4835V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830V8 Issued Date : 2013.01.23 Revised Date : Page No. : 9/9 DFN3×3 Dimension Marking: D D Date Code D D 4835 S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Inches Min. Max. 0.0276 0.0354 0.0000 0.0197 0.0094 0.0138 0.0039 0.0079 0.1280 0.1339 0.1201 0.1280 0.0945 0.1024 DIM A A1 b c D D1 D2 Millimeters Min. Max. 0.70 0.90 0.00 0.50 0.24 0.35 0.10 0.20 3.25 3.40 3.05 3.25 2.40 2.60 DIM E E1 e H L L1 L2 Inches Min. Max. 0.1181 0.1260 0.0531 0.0610 0.0256 BSC 0.1260 0.1339 0.0118 0.0197 0.0039 0.0079 0.0445 REF Millimeters Min. Max. 3.00 3.20 1.35 1.55 0.65 BSC 3.20 3.40 0.30 0.50 0.10 0.20 1.13 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4835V8 CYStek Product Specification