CD8C60SR Sensitive Gate Silicon Controlled Rectifiers Symbol ○ TO-252 2. Anode BVDRM = 600V IT(RMS) = 8 A ▼ ○ 1.Cathode 3.Gate ITSM = 70A 1 2 ○ 3 Features ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 8 A ) General Description Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection, motor control circuit in power tool, inrush current limit circuit and heating control system. ABSOLUTE MAXIMUM RATINGS Paramter Symbol Storage Junction Temperature Range Operating Junction Temperature Range Value Units Tstg -40~150 ℃ Tj -40~110 ℃ Repetitive Peak Off-State Voltage T j=25℃ VDRM 600 V Repetitive Peak Reverse Voltage VRRM 600 V RMS On-State Current (180° conduction angle) TI=105℃ IT(RMS) 8 A IT(AV) 5 A Average On-Stage Current (180° conduction angle) TI=105℃ Non Repetitive Surge Peak On-State Current(T j=25℃) tp=10ms tp=8.3ms I²t Value For Fusing tp=10ms Critical Rate Of Rise Of On-State Current IG=2ｘIGT, tr≤100ns, f=50Hz, T j=110℃ Peak Gate Current tp=20us, T j=125℃ Average Gate Power Dissipation T j=125℃ ITSM 70 73 A I²t 24.5 A²s dl/dt 50 A/us IGM 4 A PG(AV) 1 W 1/4 O c t, 2010. Rev.0 copyright @ Apollo Electron Co., Ltd. All rights reserved. CD8C60SR ELECTRICAL CHARACTERISTICS (T j=25℃ unless otherwise specified) Test Condition Symbol IGT VD=6V RL=140Ω VGT Unit MAX 100 uA MAX 0.8 V VGD VD=VDRM RL=3.3KΩ RGK=220Ω T j=125℃ MIN 0.1 V IL IG=1mA RGK=1KΩ MAX 6 mA IH IT=50mA RGK=1KΩ MAX 5 mA VTM IT=16A tp=380uS T j=25℃ MAX 1.6 V dv/dt VD=65% VDRM RGK=220Ω MIN 5 V/μs IDRM VDRM=VRRM RGK=220Ω T J=25℃ 5 uA IRRM VDRM=VRRM RGK=220Ω T J=125℃ 1 mA RGK MAX 6~35 KΩ THERMAL RESISTANCES Symbol Parameter Value Unit Rth(J-c) Junction To Case(DC) 20 ℃/W 2/4 CD8C60SR Fig 1 Maximum Average Power Dissipation vs. Average On-State Current Fig.3 Surge Peak On-State Current vs. Number Of Cycles Fig 2 Average And D.C. On-State Current vs. Lead Temperature Fig.4 Non-Repetitive Surge Peak On-State Current For a Sinusoidal Pulse With Width tp < 10ms, And Corresponding Value Of I²t Fig.5 Relative Variation Of Gate Trigger Current, Fig.6 On-State Characteristics (maximum values) Holding Current and Latching Current vs. Junction Temperature (typical values) 3/4 CD8C60SR TO-252 Package Dimension Symbol A B b b1 C D D1 E e1 e2 L1 L2 Min. 2.20 1.30 0.55 0 .46 0.46 6.40 5.20 5.40 2.25 4.50 9.25 0 .95 Milimeters Typ. 2.3 1.4 0.6 0.51 0.51 6.5 5.3 2.285 2.3 4.6 9.5 1.2 Max. 2.40 1.50 0.65 0.56 0.56 6.60 5.40 5.60 2.35 4.70 9.75 1.45 Min. 0.087 0.051 0.022 0.018 0.018 0.252 0.205 0.212 0.089 0.177 0.346 0.037 Inches Typ. 0.0905 0.055 0.024 0.02 0.02 0.256 0.2085 0.09 0.091 0.181 0.365 0.047 Max. 0.094 0.059 0.026 0.022 0.022 0.260 0.212 0.220 0.093 0.185 0.384 0.057 4/4