DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 (LN25790) APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter (CSI). Reverse recovery ratings and characteristics are included. ITCM VDRM/VRRM dVD/dt dIT/dt 1500A 6500V 1000V/µs 300A/µs FEATURES Reverse blocking Capability Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements ORDERING INFORMATION Order as: DGT409BCA6565 Outline type code: CA (See Package Details for further information) Fig. 1 Package outline 1/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM (V) Repetitive Peak Reverse Voltage VRRM (V) DGT409BCA 6500 6500 Conditions Tvj = 115°C, IDM =, IRRM = 100mA CURRENT RATINGS Symbol Parameter ITCM Conditions Repetitive peak controllable on-state current Units Max. VD = 4300V, Tj = 115°C, dIGQ/dt = 20A/s, CS = 2 F 1500 A SURGE RATINGS Symbol ITSM 2 It Parameter Test Conditions Max. Units Surge (non repetitive) on-state current 10ms half sine. Tj = 115°C 3.0 kA 10ms half sine. Tj = 115°C 45 kA s VD = 3000V, IT = 800A, Tj = 115°C, IFG > 20A, Rise time (tr) > 1.5 s 300 A/s VD= 3000V; RGK 1.5, Tj = 115°C 175 V/s VD= 3000V; VRG -2V, Tj = 115°C 1000 V/s 200 nH 2 I t for fusing diT/dt Critical rate of rise of on-state current dVD/dt Rate of rise of off-state voltage LS Peak stray inductance in snubber circuit 2 o IT = 1500A, VDM = 6000V, Tj = 115 C, dIGQ = 20A/us, CS = 2.0uF GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units This value may exceeded during turn-off - 25 V 20 70 A Average forward gate power - 10 W Peak reverse gate power - 15 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 15 60 A/s tON(min) Minimum permissible on time 50 - s tOFF(min) Minimum permissible off time 150 - s - 50 mA IRGM Continuous reverse gate-cathode current VRGM = 16V, No gate cathode resistor 2/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR THERMAL AND MECHANICAL RATINGS Parameter Symbol Thermal resistance – junction to heatsink surface Rth(j-hs) Test Conditions Double side cooled Min. Max. Units DC - 0.046 °C/W Anode DC - 0.073 °C/W Cathode DC - 0.124 °C/W Per contact - 0.009 °C/W - 115 °C Single side cooled Rth(c-hs) Contact thermal resistance Clamping force 32.0kN With mounting compound Tvj Virtual junction temperature On-state (conducting) Top/Tstg Operating junction/storage temperature range -40 115 °C Clamping force 11.0 15.0 kN Fm CHARACTERISTICS o Tj =115 C unless stated otherwise Parameter Symbol Test Conditions Min. Max. Units VTM) On-state voltage At 200A peak, IG(ON) = 4A d.c. - 4 V IDM Peak off-state current VDRM = 6500V, VRG = 0V - 100 mA IRRM Peak reverse current VRRM = 6500V - 100 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25 C o - 1 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25 C o - 2 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on Energy VD = 3000V - 2500 mJ td Delay time IT = 400A, dIT/dt = 150A/µs - 3 µs tr Rise time IFG = 20A, rise time (tr ) < 1.5µs - 7 µs - 2500 mJ EOFF tgs Turn-off energy Storage time µs tgf Fall time IT = 800A, VDM = 3000V tgq Gate controlled turn-off time Snubber Cap Cs = 2µC QGQ Turn-off gate charge diGQ/dt = 20A/us QGQT IGQM See Fig.17 and Fig.18 µs µs - 3600 µC Total turn-off gate charge - 7200 µC Peak reverse gate current - 350 A 3/11 www.dynexsemi.com DGT409BCA 0.9x VD IT VD dVD/dt td ITAIL VDP 0.1x VD VDM 0.9x IT VD Anode voltage and current SEMICONDUCTOR tgs tr tgf tgt tgq 0.1x IFG IFG VFG tw1 IG(ON) 0.1x IGQ VRG Gate voltage and current dIFG/dt QGQ 0.5x IGQM IGQM V(RG)BR Recommended gate conditions to switch off ITCM = 800A: IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20µs IGQM = 270A typical diGQ/dt = 30A/µs QGQ = 2200µC VRG(min) = 2V VRG(max) = 15V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.2 General switching waveforms 4/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR CURVES IT QS VR IRR 15µs Fig.3 Reverse recovery waveforms 1.8 IGT 1000 3.6 900 3.2 800 1.4 2.8 1.2 2.4 1.0 2.0 0.8 VGT 1.4 0.6 1.2 0.4 0.8 0.2 0.4 0 -50 -25 0 25 50 75 100 Junction temperature, Tj - (° C) 125 Gate trigger current, IGT - (A) Gate trigger voltage, VGT - (V) 1.6 4.0 0 150 Fig.4 Maximum gate trigger voltage/current vs junction temperature Instantaneous on-state current, IT - (A) 2.0 700 Tj = 25° C 600 500 Tj = 115° C 400 300 200 100 0 0 1 2 3 4 5 6 7 Instantaneous on-state voltage, VT - (V) 8 Fig.5 Maximum on-state characteristics 5/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR 7.0 1.5 Reverse recovery energy per pulse, EOFF - (J) Maximum permissible turn-off current, ITCM - (kA) Conditions: 1.4 Tj = 115° C, 1.3 VDM = 4300V, dIGQ/dt = 20A/µs 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Conditions: 6.5 Tc = 100° C, V = 3500V 6.0 R IT = 300A 5.5 5.0 4.5 4.0 IT = 150A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Snubber capacitance, CS - (µF) 0 1.8 2.0 Fig.6 Maximum dependence of ITCM on CS 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.7 Maximum reverse recovery energy vs rate of fall of anode current 800 Conditions: T = 100° C, 3800 Vc = 3500V R Conditions: T = 100° C, 750 Vc = 3500V R 3600 IT = 300A 3400 3200 3000 2800 2600 IT = 150A 2400 Peak reverse recovery current, IRR - (A) Reverse recovery stored charge, QS - (µC) 4000 700 IT = 300A 650 600 IT = 150A 550 500 450 400 350 2200 300 2000 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.8 Maximum reverse recovery charge vs rate of fall of anode current 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.9 Maximum reverse recovery current vs rate of fall of anode current 6/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR 2500 6000 2100 IT = 300A Turn-on energy loss, EON - (mJ) Peak reverse recovery power, PPK - (kW) Conditions: T = 100° C, 2300 Vc = 3500V R 1900 1700 IT = 150A 1500 1300 1100 Conditions: 5500 Tj = 115° C, IFG = 20A, CS = 2µF, RS = 20Ω, 5000 dIT/dt = 150A/µs, dIFG/dt = 30A/µs 4500 VD = 3000V 4000 3500 3000 VD = 1500V 2500 2000 1500 900 1000 700 500 500 0 20 0 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) 0 Fig.10 Maximum reverse recovery power vs rate of fall of anode current 4000 8 3500 VD = 4500V 7 3000 6 2500 V = 3000V D 2000 1500 100 200 300 400 500 600 On-state current, IT - (A) 700 800 Fig.11Turn-on energy vs on-state current Switching time, - (µs) Turn-on energy loss, EON - (mJ) VD = 4500V tr 5 4 3 td VD = 1500V 1000 Conditions: Tj = 115° C, IT = 400A, 500 CS = 2µF, RS = 20Ω, dIT/dt = 150A/µs, dIFG/dt = 30A/µs 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A) 2 60 Fig.12 Turn-on energy vs peak forward gate current Conditions: Tj = 115° C, IFG = 20A, 1 CS = 2µF, RS = 10Ω, VD = 3000V, dIT/dt = 150A/µs dIFG/dt = 30A/µs 0 0 100 200 300 400 500 On-state current, IT - (A) 600 700 Fig.13 Delay time and rise time vs on-state current 7/11 www.dynexsemi.com DGT409BCA Rise time -tr 5 4 3 Delay time -td 2 CS = 0.5µ 3000 ,C 0V 50 2500 VD 2000 = = F 2µ S 1 1500 1000 Conditions: Tj = 115° C,RS = 20Ω, dIGG/dt = 20A/µs, CS = 2µF 500 1 D Switching time - (µs) 6 3500 V 7 4000 Turn-off energy losses, EOFF - (mJ) 8 F 4500 Conditions: Tj = 115° C, IT = 400A, CS = 2µF, RS = 20Ω, dIT/dt = 150A/µs, dIFG/dt = 30A/µs, VD = 3000V VD = 4500V , 9 =4 500 V, C S =2 V µF D = 30 00 V, C S = 2µ F SEMICONDUCTOR 0 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A) 0 60 200 400 600 800 1000 1200 1400 1600 On-state current, IT - (A) Fig.14 Switching times vs peak forward gate current Fig.15 Maximum turn-off energy vs on-state current 4500 18 4.5 tgs VD = 3000V 3000 4.0 14 3.5 12 3.0 10 2500 2000 VD = 1500V 1500 1000 Conditions: Tj = 115° C, RS = 10Ω, IT = 800A, CS = 2µF 500 0 2.5 tgf 8 2.0 6 1.5 4 1.0 Conditions: Tj = 115° C, CS = 2μF, RS = 20Ω, dIGQ/dt = 20A/μs 0.5 VDM = 3000V 0 200 300 400 500 600 700 800 On-state current,IT - (A) 2 0 0 10 20 30 40 50 60 Rate of rise of reverse gate current, dIGQ/dt - (A/µs) Fig.16 Turn-off energy vs rate of rise of reverse gate current 0 100 Gate fall time, tgf - (μs) Turn-off energy loss, EOFF - (mJ) 3500 16 Gate storage time, tgs - (μs) VD = 4500V 4000 Fig.17 Gate storage time and fall time vs on-state current 8/11 www.dynexsemi.com DGT409BCA 3.0 28 2.8 26 2.6 24 2.4 22 20 tgf 2.2 2.0 18 1.8 16 1.6 14 1.4 12 1.2 10 1.0 8 tgs 0.8 6 0.6 Conditions: 0.4 4 Tj = 115° C, CS = 2µF, RS = 10Ω, IT = 800A, 2 0.2 VDM = 3000V 0 0 0 10 20 30 40 50 60 70 80 Rate of rise of reverse gate current, dIGQ/dt - (A/µs) Fig.18 Gate storage time and fall time vs rate of rise of reverse gate current 0.1 dc Transient thermal impedance, Zth (j-c) - (° C/kW ) 30 Gate fall time, tgf - (µs) Gate storage time, tgs - (µs) SEMICONDUCTOR 0.01 0.001 0.0001 0.001 0.01 0.1 1 Time - (s) 10 100 Fig.19 Maximum (limit) transient thermal impedance – double side cooled 9/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 0.1 x 1.95 0.05 deep (in both electrodes) Auxiliary cathode 20° Gate Cathode 29.5 nom 37.16-36.82 Ø51 nom Ø38 nom Ø38 nom Ø56.0 max Ø63 nom Anode Nominal weight: 350g Clamping force: 12kN 10% Lead length: 505mm Package outine type code: CA Fig.20 Package outline 10/11 www.dynexsemi.com DGT409BCA SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 11/11 www.dynexsemi.com