DYNEX DGT409BCA_07

DGT409BCA
Reverse Blocking Gate Turn-off
Thyristor
DS4414-4.2 December 2007 (LN25790)
APPLICATIONS
KEY PARAMETERS
The DGT409BCA is a symmetrical GTO designed
for applications, which specifically require a reverse
blocking capability, such as current source inverter
(CSI). Reverse recovery ratings and characteristics
are included.
ITCM
VDRM/VRRM
dVD/dt
dIT/dt
1500A
6500V
1000V/µs
300A/µs
FEATURES
Reverse blocking Capability
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
Turn-off Capability Allows Reduction in
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
Outline type code: CA
(See Package Details for further information)
Fig. 1 Package outline
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DGT409BCA
SEMICONDUCTOR
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage VDRM (V)
Repetitive Peak Reverse
Voltage VRRM (V)
DGT409BCA
6500
6500
Conditions
Tvj = 115°C, IDM =, IRRM = 100mA
CURRENT RATINGS
Symbol
Parameter
ITCM
Conditions
Repetitive peak controllable on-state current
Units
Max.
VD = 4300V, Tj = 115°C,
dIGQ/dt = 20A/s, CS = 2 F
1500
A
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Test Conditions
Max.
Units
Surge (non repetitive) on-state current
10ms half sine. Tj = 115°C
3.0
kA
10ms half sine. Tj = 115°C
45
kA s
VD = 3000V, IT = 800A, Tj = 115°C, IFG > 20A,
Rise time (tr) > 1.5 s
300
A/s
VD= 3000V; RGK 1.5, Tj = 115°C
175
V/s
VD= 3000V; VRG -2V, Tj = 115°C
1000
V/s
200
nH
2
I t for fusing
diT/dt
Critical rate of rise of on-state current
dVD/dt
Rate of rise of off-state voltage
LS
Peak stray inductance in snubber
circuit
2
o
IT = 1500A, VDM = 6000V, Tj = 115 C, dIGQ = 20A/us,
CS = 2.0uF
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
This value may exceeded during turn-off
-
25
V
20
70
A
Average forward gate power
-
10
W
Peak reverse gate power
-
15
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
15
60
A/s
tON(min)
Minimum permissible on time
50
-
s
tOFF(min)
Minimum permissible off time
150
-
s
-
50
mA
IRGM
Continuous reverse gate-cathode
current
VRGM = 16V, No gate cathode resistor
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DGT409BCA
SEMICONDUCTOR
THERMAL AND MECHANICAL RATINGS
Parameter
Symbol
Thermal resistance – junction to
heatsink surface
Rth(j-hs)
Test Conditions
Double side cooled
Min.
Max.
Units
DC
-
0.046
°C/W
Anode DC
-
0.073
°C/W
Cathode DC
-
0.124
°C/W
Per contact
-
0.009
°C/W
-
115
°C
Single side cooled
Rth(c-hs)
Contact thermal resistance
Clamping force 32.0kN
With mounting compound
Tvj
Virtual junction temperature
On-state (conducting)
Top/Tstg
Operating junction/storage
temperature range
-40
115
°C
Clamping force
11.0
15.0
kN
Fm
CHARACTERISTICS
o
Tj =115 C unless stated otherwise
Parameter
Symbol
Test Conditions
Min.
Max.
Units
VTM)
On-state voltage
At 200A peak, IG(ON) = 4A d.c.
-
4
V
IDM
Peak off-state current
VDRM = 6500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
VRRM = 6500V
-
100
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25 C
o
-
1
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25 C
o
-
2
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on Energy
VD = 3000V
-
2500
mJ
td
Delay time
IT = 400A, dIT/dt = 150A/µs
-
3
µs
tr
Rise time
IFG = 20A, rise time (tr ) < 1.5µs
-
7
µs
-
2500
mJ
EOFF
tgs
Turn-off energy
Storage time
µs
tgf
Fall time
IT = 800A, VDM = 3000V
tgq
Gate controlled turn-off time
Snubber Cap Cs = 2µC
QGQ
Turn-off gate charge
diGQ/dt = 20A/us
QGQT
IGQM
See Fig.17 and
Fig.18
µs
µs
-
3600
µC
Total turn-off gate charge
-
7200
µC
Peak reverse gate current
-
350
A
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DGT409BCA
0.9x VD
IT
VD
dVD/dt
td
ITAIL
VDP
0.1x VD
VDM
0.9x IT
VD
Anode voltage and current
SEMICONDUCTOR
tgs
tr
tgf
tgt
tgq
0.1x IFG
IFG
VFG
tw1
IG(ON)
0.1x IGQ
VRG
Gate voltage and current
dIFG/dt
QGQ
0.5x IGQM
IGQM
V(RG)BR
Recommended gate conditions to switch off ITCM = 800A:
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 20µs
IGQM = 270A typical
diGQ/dt = 30A/µs
QGQ = 2200µC
VRG(min) = 2V
VRG(max) = 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.2 General switching waveforms
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DGT409BCA
SEMICONDUCTOR
CURVES
IT
QS
VR
IRR
15µs
Fig.3 Reverse recovery waveforms
1.8
IGT
1000
3.6
900
3.2
800
1.4
2.8
1.2
2.4
1.0
2.0
0.8
VGT
1.4
0.6
1.2
0.4
0.8
0.2
0.4
0
-50
-25
0
25
50
75
100
Junction temperature, Tj - (° C)
125
Gate trigger current, IGT - (A)
Gate trigger voltage, VGT - (V)
1.6
4.0
0
150
Fig.4 Maximum gate trigger voltage/current vs junction
temperature
Instantaneous on-state current, IT - (A)
2.0
700
Tj = 25° C
600
500
Tj = 115° C
400
300
200
100
0
0
1
2
3
4
5
6
7
Instantaneous on-state voltage, VT - (V)
8
Fig.5 Maximum on-state characteristics
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DGT409BCA
SEMICONDUCTOR
7.0
1.5
Reverse recovery energy per pulse, EOFF - (J)
Maximum permissible turn-off current, ITCM - (kA)
Conditions:
1.4 Tj = 115° C,
1.3 VDM = 4300V,
dIGQ/dt = 20A/µs
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Conditions:
6.5 Tc = 100° C,
V = 3500V
6.0 R
IT = 300A
5.5
5.0
4.5
4.0
IT = 150A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
0
0
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Snubber capacitance, CS - (µF)
0
1.8 2.0
Fig.6 Maximum dependence of ITCM on CS
20
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.7 Maximum reverse recovery energy vs rate of fall of
anode current
800
Conditions:
T = 100° C,
3800 Vc = 3500V
R
Conditions:
T = 100° C,
750 Vc = 3500V
R
3600
IT = 300A
3400
3200
3000
2800
2600
IT = 150A
2400
Peak reverse recovery current, IRR - (A)
Reverse recovery stored charge, QS - (µC)
4000
700
IT = 300A
650
600
IT = 150A
550
500
450
400
350
2200
300
2000
0
20
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.8 Maximum reverse recovery charge vs rate of fall
of anode current
0
20
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.9 Maximum reverse recovery current vs rate of fall of
anode current
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DGT409BCA
SEMICONDUCTOR
2500
6000
2100
IT = 300A
Turn-on energy loss, EON - (mJ)
Peak reverse recovery power, PPK - (kW)
Conditions:
T = 100° C,
2300 Vc = 3500V
R
1900
1700
IT = 150A
1500
1300
1100
Conditions:
5500 Tj = 115° C, IFG = 20A,
CS = 2µF, RS = 20Ω,
5000 dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
4500
VD = 3000V
4000
3500
3000
VD = 1500V
2500
2000
1500
900
1000
700
500
500
0
20
0
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
0
Fig.10 Maximum reverse recovery power vs rate of fall
of anode current
4000
8
3500 VD = 4500V
7
3000
6
2500 V = 3000V
D
2000
1500
100
200
300 400 500 600
On-state current, IT - (A)
700
800
Fig.11Turn-on energy vs on-state current
Switching time, - (µs)
Turn-on energy loss, EON - (mJ)
VD = 4500V
tr
5
4
3
td
VD = 1500V
1000
Conditions:
Tj = 115° C, IT = 400A,
500 CS = 2µF, RS = 20Ω,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
0
0
10
20
30
40
50
Peak forward gate current, IFGM - (A)
2
60
Fig.12 Turn-on energy vs peak forward gate current
Conditions:
Tj = 115° C, IFG = 20A,
1 CS = 2µF, RS = 10Ω,
VD = 3000V, dIT/dt = 150A/µs
dIFG/dt = 30A/µs
0
0
100
200
300
400
500
On-state current, IT - (A)
600
700
Fig.13 Delay time and rise time vs on-state current
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DGT409BCA
Rise time -tr
5
4
3
Delay time -td
2
CS =
0.5µ
3000
,C
0V
50
2500
VD
2000
=
=
F
2µ
S
1
1500
1000
Conditions:
Tj = 115° C,RS = 20Ω,
dIGG/dt = 20A/µs, CS = 2µF
500
1
D
Switching time - (µs)
6
3500
V
7
4000
Turn-off energy losses, EOFF - (mJ)
8
F
4500
Conditions:
Tj = 115° C, IT = 400A,
CS = 2µF, RS = 20Ω,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
VD =
4500V
,
9
=4
500
V, C
S =2
V
µF
D =
30
00
V,
C
S =
2µ
F
SEMICONDUCTOR
0
0
0
10
20
30
40
50
Peak forward gate current, IFGM - (A)
0
60
200
400 600 800 1000 1200 1400 1600
On-state current, IT - (A)
Fig.14 Switching times vs peak forward gate current
Fig.15 Maximum turn-off energy vs on-state current
4500
18
4.5
tgs
VD = 3000V
3000
4.0
14
3.5
12
3.0
10
2500
2000
VD = 1500V
1500
1000
Conditions:
Tj = 115° C, RS = 10Ω,
IT = 800A, CS = 2µF
500
0
2.5
tgf
8
2.0
6
1.5
4
1.0
Conditions:
Tj = 115° C, CS = 2μF,
RS = 20Ω, dIGQ/dt = 20A/μs 0.5
VDM = 3000V
0
200 300 400 500 600 700 800
On-state current,IT - (A)
2
0
0
10
20
30
40
50
60
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate
current
0
100
Gate fall time, tgf - (μs)
Turn-off energy loss, EOFF - (mJ)
3500
16
Gate storage time, tgs - (μs)
VD = 4500V
4000
Fig.17 Gate storage time and fall time vs on-state current
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DGT409BCA
3.0
28
2.8
26
2.6
24
2.4
22
20
tgf
2.2
2.0
18
1.8
16
1.6
14
1.4
12
1.2
10
1.0
8
tgs
0.8
6
0.6
Conditions:
0.4
4 Tj = 115° C, CS = 2µF,
RS = 10Ω, IT = 800A,
2
0.2
VDM = 3000V
0
0
0
10
20
30
40
50
60
70
80
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.18 Gate storage time and fall time vs rate of rise of
reverse gate current
0.1
dc
Transient thermal impedance, Zth (j-c) - (° C/kW )
30
Gate fall time, tgf - (µs)
Gate storage time, tgs - (µs)
SEMICONDUCTOR
0.01
0.001
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.19 Maximum (limit) transient thermal impedance –
double side cooled
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DGT409BCA
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 0.1 x 1.95 0.05 deep (in both electrodes)
Auxiliary cathode
20°
Gate
Cathode
29.5 nom
37.16-36.82
Ø51 nom
Ø38 nom
Ø38 nom
Ø56.0 max
Ø63 nom
Anode
Nominal weight: 350g
Clamping force: 12kN 10%
Lead length: 505mm
Package outine type code: CA
Fig.20 Package outline
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DGT409BCA
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
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contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
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products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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