FAIRCHILD 495220TU

495220
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Medium Power Linear Application
Equivalent Circuit
C
B
TO-220
Marking : 495220
1
1.Base
2.Collector
3.Emitter
E
Absolute Maximum Ratings *
Symbol
TC=25°C unless otherwise noted
Parameter
Value
Units
BVCBO
Collector-Base Voltage
550
V
BVCEO
Collector-Emitter Voltage
325
V
BVEBO
Emitter-Base Voltage
10
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)**
6
A
IB
Base Current (DC)
0.5
A
PC
Collector Dissipation(TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Junction Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width ≤ 5ms, Duty Cycle ≤ 10%
Electrical Characteristics * TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
250
Units
BVCEO(SUS) Collector-Emitter Sustaining Voltage
IC=1.5A, IB = 0.05A, L = 25mH
V
ICBO
Collector Cut-off Current
VCB = 550V, IE = 0
5
mA
IEBO
Emitter Cut-off Current
VEB=10V, IC=0
1
mA
hFE
DC Current Gain
VCE=5V, IC=0..5A
VCE=5V, IC=3.0A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.75A, IB = 0.17A
IC = 2A, IB = 5mA
1.7
1.5
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 5mA
2
V
5000
1000
* Pulse Test : Pulse Width ≤ 5ms, Duty Cycle ≤ 10%
© 2008 Fairchild Semiconductor Corporation
495220 Rev. A1
www.fairchildsemi.com
1
495220 — NPN Epitaxial Silicon Darlington Transistor
April 2008
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
495220 Rev. A1
www.fairchildsemi.com
2
495220 High Voltage & Medium Power Linear Application
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