DB5H411K Silicon epitaxial planar type Unit: mm For high frequency amplification DB2J411 in WSMini5 type package Features Low forward voltage VF and small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 3F Basic Part Number Dual DB2J411 (Parallel) Packaging 1: Anode-1 2: N.C. 3: Anode-2 Panasonic JEITA Code DB5H411K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Forward current (Average) Non-repetitive peak forward surge current *1 Single Double Single Double Symbol Rating Unit VR 40 V 1 A 0.75 A 3 A 2.25 A IF(AV) IFSM Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C 4: Cathode-2 5: Cathode-1 WSMini5-F1-B SC-113CA 5 4 1 2 3 Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit 0.50 0.58 V 100 µA Forward voltage VF IF = 1 A Reverse current IR VR = 40 V 15 Terminal capacitance Ct VR = 10 V, f = 1 MHz 21 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA 6.8 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: January 2013 VR Ver. BED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA t Irr = 10 mA 1 DB5H411K DB5H411K_ IF-VF DB5H411K_Ct-VR DB5H411K_ IR-VR IF VF IR VR Ct VR 140 10 Reverse current IR (A) Forward current IF (A) 1 100°C 85°C Ta = 125°C 10−4 10−1 100°C 85°C 10−2 25°C −30°C 10−6 25°C 0.2 0.4 0.6 0.8 10−8 0 10 Forward voltage VF (V) (1) tp / T (2) Rth(j-l) = 40°C/W (3) 10 1 10−3 (1) Non-heat sink (2) Mounted on glass epoxy print board. (3) Mounted on alumina print board. (50 mm × 50 mm × 0.8 mm) Solder in : 2 mm × 2 mm 10−1 40 0 40 0 10 10 Time t (s) 103 IF DC 1.00 tp T 1/4 0.25 0 0 25 50 75 100 125 150 175 Lead temperature Tl (°C) Ver. BED 40 PF(AV) IF(AV) Sine Wave 0.50 30 DB5H411K_ PF(AV)-IF(AV) VR = 20 V Tj = 125°C 0.75 1/2 20 Reverse voltage VR (V) IF(AV) Tl Forward current (Average) IF(AV) (A) Thermal resistance Rth (°C/W) 30 1.25 102 60 DB5H411K_ IF(AV)-Tl Rth t 103 80 Reverse voltage VR (V) DB5H411K_Rth-t 2 20 Forward power dissipation (Average) PF(AV) (A) 0 100 20 −30°C 10−3 Ta = 25°C f = 1MHz 120 Terminal capacitance Ct (pF) Ta = 125°C 10−2 0.6 IF 0.5 tp DC T Sine Wave 1/2 0.4 1/4 0.3 0.2 0.1 0 0 0.25 0.50 0.75 1.00 1.25 Forward current (Average) IF(AV) (Α) 2 DB5H411K WSMini5-F1-B Unit: mm Land Pattern (Reference) (Unit: mm) 3 Ver. 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