AP2603GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
▼ Simple Drive Requirement
D
▼ Small Package Outline
D
G
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
SOT-26
D
BVDSS
-20V
RDS(ON)
65mΩ
ID
-5A
D
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
G
S
The SOT-26 package is widely used for all commercial-industrial
applications.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-20
V
+12
V
3
-5
A
3
-4
A
-20
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201208305
AP2603GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-4.5A
-
-
53
mΩ
VGS=-4.5V, ID=-4.2A
-
-
65
mΩ
VGS=-2.5V, ID=-2.0A
-
-
120
mΩ
-0.5
-
-1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= +12V, VDS=0V
-
-
+100
nA
ID=-4.2A
-
11.5
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-15V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-4.2A
-
16.5
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
42
-
ns
tf
Fall Time
VGS=-10V
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
780
1200
pF
Coss
Output Capacitance
VDS=-15V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
7
14
Ω
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-4.2A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t ≦ 10S ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2603GY-HF
20
20
-5.0V
-4.5V
-3.5V
-2.5V
-ID , Drain Current (A)
16
16
12
V G = -2.0V
8
4
65mΩ
12
V G = -2.0V
8
4
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D = -2A
o
T A =25 C
I D = -4.2A
V GS = -4.5V
I D =-4.2A
1.6
T A =25 o C
Normalized RDS(ON)
80
RDS(ON) (mΩ )
-5.0V
-4.5V
-3.5V
-2.5V
TA=150oC
-ID , Drain Current (A)
T A =25 o C
60
1.4
1.2
1
40
0.8
0.6
20
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
Normalized -VGS(th)
I D = -250uA
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
0.4
2
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2603GY-HF
f=1.0MHz
1000
I D = -4.2A
V DS = -16V
800
C iss
6
65mΩ
600
C (pF)
-VGS , Gate to Source Voltage (V)
8
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
-ID (A)
100us
Operation in this
area limited by
RDS(ON)
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 156℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS = -5V
VG
-ID , Drain Current (A)
16
QG
-4.5V
12
QGS
QGD
8
4
T j =150 o C
T j =25 o C
Charge
T j = -40 o C
0
0
1
2
3
Q
4
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4