AP9435GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low Gate Charge
D
D
▼ Fast Switching
S
SO-8
S
S
BVDSS
-30V
RDS(ON)
50mΩ
ID
-5.3A
G
Description
D
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
±20
V
3
-5.3
A
3
-4.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200821072-1/4
AP9435GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
50
mΩ
VGS=-4.5V, ID=-4A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS=0V, ID=-250uA
2
Max. Units
VDS=-10V, ID=-5A
-
5
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-5.3A
-
14.6
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
3.7
-
nC
VDS=-15V
-
6.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7.7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=15Ω
-
9.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
-
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9435GM
20
20
T A =25 o C
-10V
-7.0V
-5.0V
-4.5V
V G =-4.0V
16
-ID , Drain Current (A)
-ID , Drain Current (A)
16
-10V
-7.0V
-5.0V
-4.5V
V G =-4.0V
T A =150 o C
12
8
12
8
4
4
0
0
0
1
2
3
0
4
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D = -4A
T A =25 ℃
I D = -5A
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ)
60
50
1.4
1
40
0.6
30
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
8.00
1.8
T j =25 o C
-VGS(th) (V)
-IS(A)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
o
100
T j , Junction Temperature ( C)
10.00
T j =150
C
50
o
Fig 3. On-Resistance v.s. Gate Voltage
6.00
0
1.6
4.00
1.4
2.00
1.2
0.00
1
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9435GM
f=1.0MHz
16
1000
12
I D = -5.3A
V DS = -15V
C (pF)
-VGS , Gate to Source Voltage (V)
C iss
8
100
C oss
C rss
4
0
10
0
4
8
12
16
20
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
10
100us
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
1s
o
0.1
T A =25 C
Single Pulse
DC
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=125 oC/W
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
9435GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
θ