AP9973GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Fast Switching Performance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Full Isolation Package
BVDSS
60V
RDS(ON)
80mΩ
ID
14A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
14
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
9
A
1
IDM
Pulsed Drain Current
40
A
PD@TC=25℃
Total Power Dissipation
25
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
5.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201210072
AP9973GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Min.
Typ.
60
-
-
V
VGS=10V, ID=9A
-
-
80
mΩ
VGS=4.5V, ID=6A
-
-
100
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
8.6
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=9A
-
8
13
nC
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=30V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=9A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=3.3Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
720
1150
pF
Coss
Output Capacitance
VDS=25V
-
77
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
IS=14A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9973GI
30
40
10V
7.0V
5.0V
4.5V
o
30
20
10
20
10
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.0
ID=9A
I D =9A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
80
1.6
1.2
70
0.8
0.31
trr
0.4
60
2
4
6
8
10
-50
0
50
100
o
V GS , Gate-to-Source Voltage (V)
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
16
1.8
12
T j =25 o C
1.6
VGS(th) (V)
IS(A)
T j =150 o C
8
1.4
1.2
4
1
0.8
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9973GI
f=1.0MHz
12
10000
V DS =30V
V DS =38V
V DS =48V
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
10
6
4
100
C oss
C rss
2
0
10
0
4
8
12
16
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
1ms
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.31
Single Pulse
trr
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
Qrr
10
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.50
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L3
2.91
3.41
L4
14.70 15.40 16.10
φ
e
L3
b1
A1
b
c
3.91
----
3.20
----
----
2.54
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220CFM
Part Number
LOGO
9973GI
YWWSSS
Package Code
meet Rohs requirement
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5