A-POWER AP40T10GH

AP40T10GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
35mΩ
▼ Fast Switching Characteristic
ID
D
39A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
39
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
27
A
1
IDM
Pulsed Drain Current
80
A
[email protected]=25℃
Total Power Dissipation
125
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200712141
AP40T10GH
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Min.
Typ.
VGS=0V, ID=1mA
100
-
-
V
VGS=10V, ID=15A
-
-
35
mΩ
VGS=6V, ID=10A
-
-
38
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=15V, ID=15A
-
14.5
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=40A
-
24
40
nC
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
o
IGSS
2
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=50V
-
5.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9.6
-
nC
VDS=50V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=2.5Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=1.25Ω
-
75
-
ns
Ciss
Input Capacitance
VGS=0V
-
1310 2100
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP40T10GH
125
80
o
T C = 175 C
10V
o
T C =25 C
10V
7.0V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
100
75
6.0V
50
5.0V
6 .0V
40
5.0 V
V G = 4.5 V
20
V G =4.5V
25
60
0
0
0
2
4
6
8
10
0
12
4
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.8
50
I D = 10 A
T C =25 o C
I D =15A
V G =10V
2.4
Normalized RDS(ON)
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
40
30
2.0
1.6
1.2
0.8
20
0.4
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.8
T j =175 o C
T j =25 o C
IS(A)
12
Normalized VGS(th) (V)
16
8
1.2
0.6
4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40T10GH
f=1.0MHz
VGS , Gate to Source Voltage (V)
12
10000
I D = 40 A
V DS = 50 V
10
C iss
8
C (pF)
1000
6
4
C oss
100
C rss
2
10
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part
Package Code
meet Rohs requirement
40T10GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5