2SB1203/2SD1803 Ordering number : EN2085C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1203/2SD1803 High-Current Switching Applications Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • High current and high fT Low collector-to-emitter saturation voltage • Fast switching speed Excellent linearity of hFE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Specifications ( ): 2SB1203 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP (--)8 A Continued on next page. Package Dimensions unit : mm (typ.) Package Dimensions unit : mm (typ.) 7518-003 7003-003 0.6 1 2 2.3 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 2 1.2 0.5 0.85 3 0 to 0.2 0.6 0.5 2SB1203S-TL-E 2SB1203S-Tl-H 2SB1203T-TL-E 2SB1203T-Tl-H 2SB1803S-TL-E 2SB1803S-Tl-H 2SB1803T-TL-E 2SB1803T-Tl-H 0.5 1.5 5.5 4 2.5 1.2 7.5 0.8 1.6 0.85 0.7 2.3 6.5 5.0 0.8 1.5 7.0 5.5 4 2SB1203S-E 2SB1203S-H 2SD1203T-E 2SD1203T-H 2SB1803S-E 2SB1803S-H 2SD1803T-E 2SD1803T-H 0.5 7.0 2.3 6.5 5.0 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 B1203 RANK LOT No. 2,4 D1803 RANK 3 LOT No. 3 TL 2SB1203 1 2SD1803 1 http://semicon.sanyo.com/en/network 50212EA TKIM/N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No. 2085-1/10 2SB1203/2SD1803 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 VCE=(--)2V, IC=(--)0.5A hFE2 VCE=(--)2V, IC=(--)4A fT Cob VCE=(--)5V, IC=(--)1A Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ. 70* Unit max. (--)1 μA (--)1 μA 400* 35 (130)180 VCB=(--)10V, f=1MHz IC=(--)3A, IB=(--)0.15A V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min. VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions MHz (60)40 pF (--280)220 (--550)400 (--)0.95 (--)1.3 mV IC=(--)3A, IB=(--)0.15A IC=(--)10μA, IE=0A (--)60 V V IC=(--)1mA, RBE=∞ (--)50 V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V V (50)50 ns (450)500 ns (20)20 ns * : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20Ms D.C.b1% OUTPUT IB2 INPUT VR RB RL 507 + 100MF VBE= --5V + 470MF VCC=25V IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1203S-E Device TP 500pcs./bag Pb Free 2SB1203S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1203T-E TP 500pcs./bag Pb Free 2SD1203T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1803S-E TP 500pcs./bag Pb Free 2SB1803S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1803T-E TP 500pcs./bag Pb Free 2SD1803T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1203S-TL-E TP-FA 700pcs./reel Pb Free 2SB1203S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1203T-TL-E TP-FA 700pcs./reel Pb Free 2SB1203T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803S-TL-E TP-FA 700pcs./reel Pb Free 2SB1803S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803T-TL-E TP-FA 700pcs./reel Pb Free 2SB1803T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free No. 2085-2/10 2SB1203/2SD1803 IC -- VCE --4 --3 A --50m --40mA --30mA --20mA --2 --10mA --1 0 IB=0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V 2SD1803 From top 50mA 45mA 40mA 35mA 30mA 4 3 25mA 20mA 15mA 2 10mA 5mA 1 0 --2.0 IB=0 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09180 IC -- VCE --5 IC -- VCE 5 2SB1203 From top --100mA --90mA --80mA --70mA --60mA Collector Current, IC -- A Collector Current, IC -- A --5 IC -- VCE 5 2SB1203 ITR09181 2SD1803 30mA A --30m --25mA --20mA --3 Collector Current, IC -- A Collector Current, IC -- A --4 --15mA --10mA --2 --5mA --1 0 IB=0 0 --2 --4 --6 --8 4 20mA 3 15mA 2 10mA 5mA 1 0 --10 25mA IB=0 0 IC -- VBE 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 100 7 5 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09186 1.0 1.2 ITR09185 2SD1803 VCE=2V Ta=75°C 25°C --25°C 2 100 7 5 2 3 0.8 hFE -- IC 3 3 2 0.6 5 2 5 7--0.01 0.4 7 3 10 0.2 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE DC Current Gain, hFE 2 0 1000 Ta=75°C 25°C --25°C 3 2 0 --1.2 2SB1203 VCE= --2V 5 3 ITR09184 hFE -- IC 7 4 1 Base-to-Emitter Voltage, VBE -- V 1000 2SD1803 VCE=2V 5°C 25° C --25 °C --1 10 Ta= 7 --3 8 5 Collector Current, IC -- A --4 Ta= 75 25°C °C --25 °C Collector Current, IC -- A --5 6 IC -- VBE 6 2SB1203 VCE= --2V --2 4 Collector-to-Emitter Voltage, VCE -- V ITR09183 Collector-to-Emitter Voltage, VCE -- V ITR09182 --6 2 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09187 No. 2085-3/10 2SB1203/2SD1803 f T -- IC 2SB1203 VCE= --5V 5 3 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 --10 ITR09188 Collector Current, IC -- A Cob -- VCB 5 100 7 5 3 2 10 5 7 --1.0 2 3 5 7 --10 2 3 2SB1203 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --1000 7 5 3 2 °C 25 --100 7 5 5°C °C --25 7 Ta= 3 2 --10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 7 3 25°C 75°C 5 5 7--0.01 2 3 5 7 --0.1 2 3 3 5 7 0.1 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09194 2 3 5 7 1.0 2 3 5 7 10 ITR09189 Cob -- VCB 2SD1803 f=1MHz 2 100 7 5 3 2 5 7 2 1.0 3 5 7 2 10 3 5 7 100 ITR09191 VCE(sat) -- IC 5 2SD1803 IC / IB=20 3 2 1000 7 5 3 2 100 7 5 °C 25 °C Ta=75 C --25° 3 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VBE(sat) -- IC 10 5 Ta= --25°C 2 Collector-to-Base Voltage, VCB -- V 5 7 --10 ITR09192 2SB1203 IC / IB=20 7 --1.0 3 2 2 Collector Current, IC -- A --10 5 10 7 --100 ITR09190 VCE(sat) -- IC 5 7 3 5 Collector-to-Base Voltage, VCB -- V 100 5 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 2 Collector Current, IC -- A 2SB1203 f=1MHz 3 5 10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10 2SD1803 VCE=5V 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Gain-Bandwidth Product, f T -- MHz 7 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 5 7 10 ITR09193 2SD1667 2SD1803 IC / IB=20 7 5 3 2 1.0 Ta= --25°C 7 75°C 5 3 25°C 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09195 No. 2085-4/10 2SB1203/2SD1803 ASO ICP IC 100ms 3 2 op era 3 2 25 °C 5°C =2 Tc nT a= ion tio 3 2 0.1 7 5 t era op DC 1.0 7 5 DC Collector Current, IC -- A 10 7 5 2SB1203 / 2SD1803 1m 10 s ms Tc=25°C Single pulse For PNP, the minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 PC -- Ta 24 Collector Dissipation, PC -- W 2 2SB1203 / 2SD1803 20 16 Id ea lh ea td iss 12 ip on 8 4 No heat sink 1 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09196 ati 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09197 No. 2085-5/10 2SB1203/2SD1803 Taping Specification 2SB1203S-TL-E, 2SB1203S-Tl-H, 2SB1203T-TL-E, 2SB1203T-Tl-H, 2SB1803S-TL-E, 2SB1803S-Tl-H, 2SB1803T-TL-E, 2SB1803T-Tl-H No. 2085-6/10 2SB1203/2SD1803 Outline Drawing Land Pattern Example 2SB1203S-TL-E, 2SB1203S-Tl-H, 2SB1203T-TL-E, 2SB1203T-Tl-H, 2SB1803S-TL-E, 2SB1803S-Tl-H, 2SB1803T-TL-E, 2SB1803T-Tl-H Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. 2085-7/10 2SB1203/2SD1803 Bag Packing Specification 2SB1203S-E, 2SB1203S-H, 2SD1203T-E, 2SD1203T-H, 2SB1803S-E, 2SB1803S-H, 2SD1803T-E, 2SD1803T-H No. 2085-8/10 2SB1203/2SD1803 Outline Drawing 2SB1203S-E, 2SB1203S-H, 2SD1203T-E, 2SD1203T-H, 2SB1803S-E, 2SB1803S-H, 2SD1803T-E, 2SD1803T-H Mass (g) Unit 0.315 mm * For reference No. 2085-9/10 2SB1203/2SD1803 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. 2085-10/10