MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt Rugged Fully Monolithic, Glass Encapsulated Construction Up to +33dBm C.W. Power Handling RoHS Compliant MASW-001100-1190 Description The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. MASW-002100-1191 These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy. Parameter Operating Temperature Storage Temperature Junction Temperature Applied Reverse Voltage RF C.W. Incident Power Bias Current +25°C 1 MASW-003100-1192 Absolute Maximum -65oC to +125oC -65oC to +150oC +175oC | - 50V | +33dBm C.W. ±20mA Max operating Conditions for a Combination of RF Power, D.C. Bias and Temperature: +33dBm CW @ 15mA (per diode) @+85°C ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 MASW-001100-1190 (SPST) Electrical Specifications @ TA = +25oC, 20mA Bias Parameter Insertion Loss Isolation Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW) Frequency Minimum Nominal Maximum Units 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 46 39 34 22 15 14 - 0.4 0.5 0.7 55 47 42 31 33 27 20 0.2 0.7 0.9 1.2 50 - dB dB dB dB dB dB dB dB dB ns V dB MASW-002100-1191 (SPDT) Electrical Specifications @ TA = +25oC, 20mA Bias Parameter Insertion Loss Isolation Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW) Frequency Minimum Nominal Maximum Units 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 48 40 34 20 18 15 - 0.4 0.5 0.7 63 50 42 27 25 25 20 0.2 0.7 1.0 1.2 50 - dB dB dB dB dB dB dB dB dB ns V dB MASW-003100-1192 (SP3T) Electrical Specifications @ TA = +25oC, 20mA Bias Parameter Insertion Loss Isolation Input Return Loss Switching Speed1 Voltage Rating2 Signal Compression (500mW) 1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10mA maximum at -50 volts. 1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10mA maximum at -50 volts. Frequency Minimum Nominal Maximum 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 49 42 33 20 14 11 - 0.5 0.7 0.9 57 48 42 24 22 21 20 0.2 0.8 1.1 1.5 50 - Units dB dB dB dB dB dB dB dB dB ns V dB 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Typical Performance Curves at TA = +25°C, 20mA Bias Current MASW-001100-1190 INSERTION LOSS vs. FREQUENCY MASW-001100-1190 RETURN LOSS vs. FREQUENCY -0.2 INSERTION LOSS (dB RETURN LOSS (dB) -10 -15 Output Return Loss -20 -25 -30 Input Return Loss -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -35 -1 0 5 10 15 20 25 30 0 10 15 20 25 FREQUENCY (GHz) MASW-002100-1191 RETURN LOSS vs. FREQUENCY MASW-002100-1191 INSERTION LOSS vs. FREQUENCY 30 -0.2 INSERTION LOSS (dB -10 RETURN LOSS (dB) 5 FREQUENCY (GHz) -15 Output Return Loss -20 -25 Input Return Loss -30 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -35 0 5 10 15 20 25 0 30 5 10 25 30 -0.3 INSERTION LOSS (dB -10 RETURN LOSS (dB) 20 MASW-003100-1192 INSERTION LOSS vs. FREQUENCY MASW-003100-1192 RETURN LOSS vs. FREQUENCY -15 15 FREQUENCY (GHz) FREQUENCY (GHz) Output Return Loss -20 -25 Input Return Loss -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -1.1 -1.2 -30 0 5 10 15 20 25 30 0 5 FREQUENCY (GHz) 10 15 20 25 30 FREQUENCY (GHz) S-Parameters: S-Parameter data for these devices are available upon request. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Typical Performance Curves @ TA = +25°C, 20mA Bias Current INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz MASW-001100-1190 ISOLATION vs. FREQUENCY INPUT RETURN LOSS (dB -22 -35 ISOLATION (dB) -40 -45 -50 -55 -60 -24 MA S W-0 0 3 10 0 -26 MA S W-0 0 2 10 0 -28 -30 MA S W-0 0 110 0 -32 -65 -34 0 -70 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA ) -75 -80 0 5 10 15 20 25 -21.5 OUTPUT RETURN LOSS (dB MASW-002100-1191 ISOLATION vs. FREQUENCY -35 -40 -45 -22 -22.5 -23 -23.5 MAS W-0 0 110 0 -24 -24.5 MA S W-0 0 3 10 0 -25 MA S W-0 0 2 10 0 -25.5 -50 0 5 10 15 20 30 35 40 45 50 55 -60 -65 INSERTION LOSS vs. BIAS CURRENT @ 10 GHz -70 -0.35 -75 -80 0 5 10 15 20 25 30 FREQUENCY (GHz) MASW-003100-1192 ISOLATION vs. FREQUENCY MAS W-0 0 2 10 0 -0.4 MAS W-0 0 110 0 -0.45 -0.5 MAS W-0 0 3 10 0 -0.55 -0.6 -0.65 -0.7 0 -35 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA) -40 -45 ISOLATION vs. BIAS CURRENT @ 10 GHz -50 -46 -55 -47 -60 -65 -70 -75 -80 0 5 10 15 FREQUENCY (GHz) 20 25 30 ISOLATION (dB) ISOLATION (dB) 25 CURRENT (mA ) -55 INSERTION LOSS (dB ISOLATION (dB) OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz 30 FREQUENCY (GHz) -48 -49 -50 MAS W-0 0 110 0 -51 MAS W-0 0 2 10 0 -52 -53 MAS W-0 0 3 10 0 -54 0 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Operation of the MASW Series Switches Operation of the MASW series of PIN switches is achieved by simultaneous application of negative DC current to the low loss switching arm J1, J2, or J3, and positive DC current to the remaining switching arms as shown in the bias connection circuits. DC return is achieved via J1. The control currents should be supplied by constant current sources. The voltages at these points will not exceed +1.5 volts (1.2V typical) at currents up to +20mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. In the isolated arm, the shunt diode is forward biased and the series diode is reverse biased. MASW-001100-1190 and Bias Connections1 J1 RF INPUT 20pF 20nH J2 BIAS 20pF 100Ω 20nH 20pF J2 RF OUTPUT 20pF Switch Chip Driver Connections MASW-001100-1190 Control Level (DC Current) at Condition of RF Output J2 J1-J2 -20mA Low Loss +20mA Isolation MASW-002100-1191 and Bias Connections1 J1 RF INPUT 20pF J3 BIAS 100Ω MASW-002100-1191 Control Level (DC Current) at 20nH Condition of RF Output Condition of RF Output J2 J3 J1-J2 J1-J3 -20mA +20mA Low Loss Isolation +20mA -20mA Isolation Low Loss 20pF J3 RF OUTPUT 20pF 20pF 20pF 20nH 20pF Switch Chip J2 RF OUTPUT MASW-003100-1192 and Bias Connections1 MASW-003100-1192 Control Level (DC Current) at J2 BIAS 20nH J1 RF INPUT Cond. of Cond. of Cond. of RF RF Output RF Output Output J2 J3 J4 J1-J2 J1-J3 J1-J4 -20mA +20mA +20mA Low Loss Isolation Isolation +20mA -20mA +20mA Isolation Low Loss Isolation +20mA +20mA -20mA Isolation Isolation Low Loss 20pF J4 BIAS 20nH 20pF 20nH J2 BIAS 100Ω 20pF 20pF 20nH 20pF J4 RF OUTPUT 20pF J2 RF OUTPUT Handling Considerations Cleanliness: These chips should be handled in a clean environment. Electro-Static Sensitivity: The MASW series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures should be used. 20pF 20nH J3 BIAS 20pF J3 RF OUTPUT Notes: 1. RLC values are for an operation frequency of 2-18GHz and bias current of ± 20mA per diode. 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Wire Bonding Thermosonic wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy, if necessary, should be adjusted to the minimum power required to achieve a good bond. RF wire and ribbon lengths should be kept as short as possible to minimize parasitic inductance. Mounting These chips have Ti-Pt-Au back metal and can be mounted using 80Au/20Sn eutectic solder or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eutectic Die Attachment: An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders containing tin should not be used. Epoxy Die Attachment: A controlled thickness of no more than 2 mils is recommended for the best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended schedule. Typically +150°C for 1 hour. Chip Outline Drawing1,2 DIM INCHES MM MIN. MAX. MIN. MAX. A 0.014 0.018 0.35 0.45 B 0.025 0.029 0.64 0.74 C D 0.008 REF 0.004 0.006 0.20 REF 0.10 0.15 E 0.004 REF 0.10 REF F 0.003 REF 0.08 REF G 0.003 REF 0.08 REF H 0.020 REF 0.52 REF Notes: 1. Topside and backside surface metallization is gold, 2.5μm thick typical. 2. Yellow areas indicate wire bonding pads. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Chip Outline Drawing1,2 MASW-002100-1191 DIM INCHES MM MIN. MAX. MIN. MAX. A 0.029 0.033 0.73 0.83 B 0.004 0.006 0.10 0.15 C 0.004 REF 0.10 REF D 0.005 REF 0.13 REF E 0.009 REF 0.23 REF F 0.023 REF 0.58 REF G 0.007 REF 0.17 REF H 0.004 REF 0.10 REF Notes: 1. 2. Topside and backside surface metallization is gold , 2.5μm thick typical. Yellow areas indicate wire bonding pads 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Chip Outline Drawing 1, 2 MASW-003100-1192 DIM INCHES MIN. MM MAX. MIN. MAX. A B C 0.046 0.050 0.036 0.040 0.019 REF 1.16 1.26 0.92 1.02 0.48 REF D 0.014 REF 0.36 REF E 0.004 REF 0.10 REF F 0.005 REF 0.13 REF G 0.004 0.006 0.10 0.15 H 0.005 REF 0.12 REF J 0.004 REF 0.10 REF Notes: 1. Topside and backside surface metallization is gold , 2.5μm thick typical. 2. Yellow areas indicate wire bonding pads 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC™ Silicon PIN Diode Switches V6 Ordering Information Part Number Package MASW-001100-11900W Waffle Pack MASW-001100-11900G Gel Pack MASW-002100-11910W Waffle Pack MASW-002100-11910G Gel Pack MASW-003100-11920W Waffle Pack MASW-003100-11920G Gel Pack 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.