Doc No. TT4-EA-11686 Revision. 3 Product Standards Fast Recovery Diode DA2JF8100L DA2JF8100L Silicon epitaxial planar type Unit: mm 1.25 0.35 For high speed switching circuits 0.13 2 Features 1.7 2.5 Small reverse current IR High repetitive peak reverse voltage VRRM Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 5A 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Repetitive peak reverse voltage Non-repetitive peak peak reverse voltage Forward current Non-repetitive peak forward surge current *1,2 Junction temperature Operating ambient temperature Storage temperature Note) VRRM VRSM IF IFSM Tj Topr Tstg 1. Cathode 2. Anode Panasonic JEITA Code Rating Unit 800 800 200 1 -40 to +150 -40 to +85 -40 to +150 V V mA A °C °C °C *1 Mounted on an alumina PC board *2 50 Hz sine wave 1 cycle ( Non-repetitive peak current ) SMini2-F5-B SC-90A ― Internal Connection 2 1 Page 1 of 4 Established : 2009-10-23 Revised : 2013-05-31 Doc No. TT4-EA-11686 Revision. 3 Product Standards Fast Recovery Diode DA2JF8100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage VF IRRM1 IRRM2 Ct Reverse current Terminal capacitance Reverse recovery time Note) *1 trr Conditions Min IF = 200 mA VRRM = 400 V VRRM = 800 V VR = 0 V, f = 1 MHz IF = 100 mA, IR = 200mA Irr = 0.25 x IR Typ Max Unit 2.5 1 10 V μA μA pF 45 ns 0.6 10 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr measurement circuit 50 Ω 50 Ω trr D.U.T. IF 5.5 Ω 0.25 × IR IR Page 2 of 4 Established : 2009-10-23 Revised : 2013-05-31 Doc No. TT4-EA-11686 Revision. 3 Product Standards Fast Recovery Diode DA2JF8100L Technical Data ( reference ) IF - VF IR - VR 1.E-04 Ta = 125 °C 1.E-01 Reverse current IR (A) Forward current IF (A) 1.E+00 1.E-02 85 °C 1.E-03 25 °C 1.E-04 1.E-05 1.E-06 0.0 -40 °C IR value is not exceeding 100 pA at -40 °C 1.E-05 Ta = 125 °C 1.E-06 85 °C 1.E-07 1.E-08 25 °C 1.E-09 1.E-10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward voltage VF (V) 0 100 200 300 400 500 600 700 800 Reverse voltage VR (V) Ct - VR Terminal capacitance Ct (pF) 0.6 Ta = 25 °C f = 1 MHz 0.5 0.4 0.3 0.2 0.1 0.0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2009-10-23 Revised : 2013-05-31 Doc No. TT4-EA-11686 Revision. 3 Product Standards Fast Recovery Diode DA2JF8100L SMini2-F5-B Unit: mm 1.25±0.10 +0.05 0.35±0.05 0.13-0.02 (5°) 2.5±0.2 1.7±0.1 2 0.50±0.05 0.4±0.1 1 0 to 0.05 (0.15) 0.7±0.1 (5°) Land Pattern (Reference) (Unit: mm) 0.9 2.4 0.9 0.9 1.1 Page 4 of 4 Established : 2009-10-23 Revised : 2013-05-31 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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